• Transactions of Materials Processing
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• v.29 no.5
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• pp.251-256
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• 2020

The purpose of this study is to investigate the effect of sintering condition on the microstructure evolution and tensile properties of the Ti-6Al-4V alloy sample processed by metal injection molding (MIM) in terms of the sizes of the alpha morphology and pore found in the matrix. For this purpose, a series of MIM were conducted on this sample at various sintering temperatures ranging from 1173 to 1373 K for three hours followed by furnace cooling, observed by the scanning electron microscopy. The microstructures sintered in this study showed that, with increasing sintering temperature over beta transus temperature, the transformation of the equiaxed alpha into transformed beta was attained while the size of pores would tend to decrease. Thus, the strength remained unchanged significantly in the tension while ductility increased to some extent as sintering temperature increased. Such mechanical behavior would be explained in relation to the microstructure evolution of the Ti-6Al-4V sample via the MIM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.522-527
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• 2014

In this study, using the silicone rubber sample of $4cm{\times}4cm{\times}0.1cm$ for low voltage cable, the electrostatic electrification properties of three samples that the conductive Al of 0%, 25%, and 50% is attached to the surface of sample was measured. The following conclusion was obtained through this experiment. 1) In case of the sample which has the Al area of 50%, the higher the humidity to 90% in the temperature of $10^{\circ}C$, the electrostatic electrification voltage was reduced about 0.25 kV to 0.02 kV, and it confirmed that the electrostatic electrification voltage was in constant about 0.02 kV in the temperature over $20^{\circ}C$. 2) Increasing the Al area of samples of 0%, 25%, and 50% in temperature of $10^{\circ}C$, it confirmed that the electrostatic electrification voltage was reduced by about 2.67 kV, 2.02 k, 0.21 kV. 3) This study shows that the conductor, followed by temperature and humidity affects the electrostatic electrification voltage.

• Korean Journal of Materials Research
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• v.32 no.2
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• pp.85-93
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• 2022

Porous mullite-corundum ceramics were prepared using organic foam impregnation method with alumina and silica as raw materials. The influence of alkaline treatment and surfactant modification on polyurethane foam were studied. Effects of sintering process and material composition on porous mullite-corundum ceramics were investigated. The results show that the hang-pulp quantity of polyurethane foam increases with alkaline treatment. After treatment with 3 wt% SDS solution, the hang-pulp quantity of polyurethane foam further improved. Open porosity of sample decreased with elevation of sintering temperature and holding time, and compressive strength of sample showed a trend opposite to the change of porosity. The open porosity of the sample was enhanced by the increase of m(Al₂O₃/SiO₂); the compressive strength decreased with increase of m(Al₂O₃/SiO₂). However, when m(Al₂O₃/SiO₂) was 2.5, the compressive strength of the sample reached 6.23 MPa, and the open porosity of the sample was 80.7 %.

• Journal of the Korean Applied Science and Technology
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• v.33 no.2
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• pp.401-410
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• 2016

The $Pt-Sn/Al_2O_3$ catalysts mixed with metal oxides for propane dehydrogenation were studied. $Cu-Mn/{\gamma}-Al_2O_3$, $Ni-Mn/{\gamma}-Al_2O_3$, $Cu/{\alpha}-Al_2O_3$ was prepared and mixed with $Pt-Sn/Al_2O_3$ to measure the activity for propane dehydrogenation. As standard sample, $Pt-Sn/Al_2O_3$ catalyst mixed with glassbead was adopted. In the case of catalytic activity test after non-reductive pretreatment of catalyst and metal oxide, $Pt-Sn/Al_2O_3$ mixed with $Cu-Mn/{\gamma}-Al_2O_3$ showed higher conversion of 15% and similar selectivity at $576.5^{\circ}C$, compared to conversion of 8% in standard sample. In the case of catalytic activity test after reductive pretreatment of catalyst and metal oxde, $Cu/{\alpha}-Al_2O_3$ showed higer yield than standard sample. But, increase of yield of most of samples after reductive pretreatment was not significant, so it was found that lattice oxygen of $Cu-Mn/{\gamma}-Al_2O_3$ is effective to propane dehydrogenation.

• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• Management & Information Systems Review
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• v.28 no.3
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• pp.69-98
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• 2009

This study investigates in-sample and out-of-sample predictive abilities of accruals and accruals components with respect to future cash flows using models developed by Barth et al.(2001). In tests, data collected fromda62 Korean KOSPI and KOSDAQ listed firms for ccr4-2007 are used. Results of in-sample prediction tests are similar with those of Barth et al.(2001). Their accrual components model is better than other three models(NI only model, CF only model and NI-total accruals model) in future cash flows predictive ability. That is, in the case of in-sample prediction, accrual components excluding amortization have additional information contents for future cash flows. But in out-of-sample tests, the results are different. The model including operational cash flows(CF only model) shows best out-of-sample predictive ability with respect to future cash flows among above four prediction models. The accrual components model of Barth et al.(2001) has worst out-of-sample predictive ability. The results are robust to sensitivity analyses. In conclusion, we can't find the evidence that accruals and accrual components have predictive ability with respect to future cash flows in out-of-sample prediction tests. This results are consistent with results of Lev et al.(2005), and inconsistent with the belief of accounting standards formulating organizations such as FASB and KASB.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.885-888
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• 2004

$BaMgAl_{10}O_{17}:Eu^{2+}$ for PDP blue phosphor was synthesized using SHS(Self-propagating High temperature Synthesis) method. While Al metal powder was oxidized in this combustion, $Eu_{2}O_3$ was reduced to Eu2+. Therefore the mole ratio of $Al/Al_{2}O_3$ is one of the most important variable of the reaction. When $Al/Al_{2}O_3$ is 2.5/3.75, it has not only appropriate temperature and reaction velocity, but also excellent luminescent property. The sample synthesized in this system has similar characteristics comparing to sample using conventional solid-state reaction.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.55-59
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• 2003

In this study, $Al_xTa_{1-x}$(x=0.0∼1.0) alloy thin films were grown by RF-Magnetron sputtering system, and the structural, mechanical and electrical properties of samples were examined by 4-point probe, XRD, AFM and micro-Vickers hardness profiler. The electrical resistivity was maximum and the crystal quality was optimum for the samples with Al content x=0.245 (Al 24.5 at.%). Regarding the surface hillock formation, the hillock density decreased with an increase of Al content for the low Al content range, and the hillock was eliminated for the sample with Al=24.5 at.%. The hillock density increased with the further increase of Al content. The high values of micro-Vickers hardness were obtained for the samples with x=0.2∼0.45. The results obtained demonstrate that the crystal quality, electrical resistivity, surface morphology and micro-hardness are closely inter-related, and that the optimum physical properties are obtained for the sample with x=0.245.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.