• Journal of Welding and Joining
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• v.13 no.3
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• pp.55-64
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• 1995

Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.29-36
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• 2000

The effects of additives and fabrication methods of glass frits far thick film paste on durability in acid of glass frits fur thick film paste were studied. To investigate the effect of fabrication method, glass brit based on $PbO-SiO_2-B_2O_3$ was prepared by various mixing method and number of melting. The effects of addition of $ZrO_2$, $Al_2O_3$, and $TiO_2$in glass on the durability in acid solution were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Proceedings of the Korea Concrete Institute Conference
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• 1991.10a
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• pp.11-14
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• 1991

Apparent diffusion coefficients of Cl-ions through hardened cement paste(HCP), which were partly substituted blending materials, were determined. Also, pore solution was extracted from HCP which were immersed in NaCl solution, and Cl- concentration of the solution were analyzed. Partly substitution of pozzolanic materials considerably reduced the diffusion rate for Cl-ions and Cl- concentration of pore solution. Binding capacity of Cl- is related to the content of Al2O3 and pozzolanic reactivity.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1231-1236
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• 1996

The electrode resistance of semiconducting PTC BaTiO3 ceramic material was studied in some detail. Comme-rical In-Ag paste In-Ga alloy and electroless plated Ni as well as evaporated Al were chosen as electrode. The contact resistance of electroded samples were measured by both dc resistivity and ac impedance analysis. The aging effect on contact resistance under cyclic loading from -1$0^{\circ}C$ to 85$^{\circ}C$ was also monitored for the prolonged period of time. In case of Al electroded samples the heat treatment and protective coating had effects on the stability against contact resistance degradation. It was also found that the samples with commercial In-Ag paste and electroless plated Ni electrode had good properties of contact resistance against aging.

• Structural Engineering and Mechanics
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• v.5 no.1
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• pp.105-113
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• 1997

This paper proposes a model for simulating concrete shrinkage taking into account aggregate restraint. In the model, concrete is regarded as a two-phase material based on shrinkage property. One is paste phase which undergoes shrinkage. Another is aggregate phase which is much more volumetrically stable. In the concrete, the aggregate phase is considered to restrain the paste shrinkage by particle interaction. Strain compatibility was derived under the assumption that there is no relative macroscopic displacement between both phases. Stresses on both phases were derived based on the shrinking stress of the paste phase and the resisting stress of the aggregate phase. Constitutive relation of paste phase was adopted from the study of Yomeyama, K. et al., and that of the aggregate phase was adopted from the author's particle contact density model. The equation for calculating concrete shrinkage considering aggregate restraint was derived from the equilibrium of the two phases. The concrete shrinkage was found to be affected by the free shrinkage of the paste phase, aggregate content and the stiffness of both phases. The model was then verified to be effective for simulating concrete shrinkage by comparing the predicted results with the autogeneous and drying shrinkage test results on mortar and concrete specimens.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.323-327
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• 1999

A water-soluble conducting polymer (CPP400 Paste) containing a derivative of polythiophene with several dopant was investigated as an anode material for organic electroluminescent devices. The device of ITO/CPP 400 Paste/TPD/$Alq_3$/Li:Al was fabricated, where CPP 400 Paste films were prepared by spin coating and TPD and $Alq_3$, films were prepared by vacuum evaporation. It was found that the turn-on voltage, current density, and luminance of the devices were dependent upon the thickness of CPP 400 Paste film in the Electroluminescent and current-voltage characteristics of the devices. This phenomena were explained by the energy level diagram of the device with the energy levels of the CPP400 Paste obtained by cyclic voltammetric method.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.10a
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• pp.76-77
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• 2003

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.38.1-38.1
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• 2010

The trend to thinner crystalline silicon solar wafers in production of solar cells investigates re-evolution of back surface field (BSF) formation. We have studied mechanisms of back contact formation in Al evaporation and screen printed Al paste for Si solar cells by TEM analysis. We observed that Si diffuse into Al during heat up. The Si diffusion process made vacancies in Si wafer. The Al began to seep into the Si wafer (Al spike). During heat down, the Al spike were shrink which causes the doped region (BSF).