• Korean Journal of Materials Research
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• v.27 no.8
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• pp.397-402
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• 2017

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.235-238
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• 1997

Basic properties of new cement pastes based on the system $CaO-Al_2O_3-P_O_5-H_2O$were studied Phosphoric acid solutions and calcium dialuminate clinkers synthesized by the hydration-burning method were used for liquid and powder components of the paste, respectively Variation in the compositions of the paste was achieved by changing the liquid/powder ratio and the concentration of phosphoric acid solution. The hardening rate of the paste was so largely affected by the amount of phosphoric acid that hardening was inhibited with the low-concentrated solution but was explosively accelerated with the high-concentrated solution. The phosphoric acid solutions of concentration of 45~50% and the liquid/powder ratio of 0.5~1.5 were favoured for the high early-strength cement paste with the reasonable hardening rate and high strength. The binding phase of hardened paste was the dense amorphous gel of the system $CaO-Al_2O_3-P_O_5-H_2O$. in which the unreacted calcium dialuminate grains were embeded.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.65-70
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• 2013

In joining Alumina to copper plate by Mo-Mn metallizing process, the effects of the composition of metallizing paste on the bonding strength were investigated. The bonding strength increased with increasing Mn amount in the paste up to 20% but followed by the decrease with addition of Mn. The maximum bonding strength reached 50MPa at 20%Mn when heated to $1550^{\circ}C$ for 60minute. The addition of Si to the metallizing powder increased the bonding strength of the joint by enhancing the mechanical bonding between the Alumina and the metallizing layer due to the decrease of layer viscosity with the addition of $SiO_2$. It is thought that MnO reacted with $Al_2O_3$ to yield $MnAl_2O_4$ spinel, forming a joint.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.571-574
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• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).

• Proceedings of the Korean Institute of Building Construction Conference
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• 2016.05a
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• pp.51-52
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• 2016

This paper researches the Chloride Binding of Cement Paste according to the Ca/Si and Ca/Al Ratio. The mechanisms of chloride ion binding are not completely known, although it is believed that Alumina contents in cementitious system have an important role. For changing cement paste composition, Ordinary Portland Cement(OPC) paste is substituted by Granulated Ground Blast Slag(GGBS). With increasing the ratio of GGBS substitution(Thus alumina contents is increasing), The chloride binding capacity has a tendency to increase of binding chloride ion capacity.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.1-91.1
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• 2010

There are some methods for increasing efficiency of crystalline silicon solar cells. Among them, It is important to reduce the recombination loss of surface for high efficiency. In order to reduce recombination loss is a way to use the BSF(Back Surface Field). The BSF on the back of the p-type wafer forms a p+layer. so, it is prevented to act electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. therefore, open-circuit-voltage and Fill factor(FF) of solar cells are increased. This paper investigates the formation of rear contact process comparing Aluminum-paste(Al-paste) with Aluminum-Metal(99.9%). It is shown that the Aluminum-Metal provides high conductivity and low contact resistance of $21.35m{\Omega}cm$ using the Vacuum evaporation process but, it is difficult to apply the standard industrial process because high Vacuum is needed and it costs a tremendous amount more than Al-paste. On the other hand, using the Al-paste process by screen printing is simple for formation of metal contact and it is possible to produce the standard industrial process. however, it is lower than Aluminum-Metal(99.9) of conductivity because of including mass glass frit. In this study, contact resistances were measured by 4-point prove. each of contact resistances is $21.35m{\Omega}cm$ of Aluminum-Metal and $0.69m{\Omega}cm$ of Al-paste. and then rear contact have been analyzed by Scanning Electron Microscopy(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.267-268
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• 2007

기존의 Free Sintering 방법을 사용하는 LTCC(Low Temperature Cofiring Ceramics)는 수축률이 일정하지 않아서 설계 치수와 동일하게 제작하기 어려운 단점을 가지고 있다. 이에 따라서 정밀한 전자부품을 제작하기 위한 방안으로 X-Y면 방향에서의 변형을 거의 zero로 제어하는 Constrained Sintering(CS) 기술이 요구되고 있다. 본 연구에서는 LTCC 기판이 소성되는 동안에 변형을 억제하기 위하여 소성온도가 LTCC 기판 보다 높은 $Al_2O_3$ 분말과 유기물을 혼합하여 페이스트를 제작한 후에 스크린 프린팅 방법을 이용하여 도포 후에 Z축 방향으로 일축가압을 하면서 소성하여 수축률을 제어 하였다. 또한 바인더와 $Al_2O_3$ 분말의 함량에 대한 최적 조성의 $Al_2O_3$ 페이스트를 제작하여 0.5%로 수축률을 가지는 균일한 LTCC 기판을 구현 할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.95-96
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• 2000

The effect of $Al_2O_3$ on the dielectric constant and the coefficient of thermal expansion of lead borosilicate glasses for the application of PDP glass paste was investigated. Measurements were made theoretically by using empirical equations on the composition of the of glasses in which the $PbO/Al_2O_3$, $B_2O_3/Al_2O_3$ and $SiO_2/Al_2O_3$ ratios were systematically varied. As a result, with increasing $PbO/Al_2O_3$ the thermal expansion coefficient and the dielectric constant noticeably increased, while the change of $B_2O_3/Al_2O_3$ and $SiO_2/Al_2O_3$ ratios did not affect those properties of the glasses.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.58-62
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• 2017

A319 aluminum alloy containing 6.5% Si and 3.5% Cu as major alloying elements has been widely used in machinery parts because of its excellent castability and crack resistance. However it needs more wear resistance to extend its usage to the severe wear environments. It has been known that hyper-eutectic Al-Si alloy having more than 12.6% Si contains pro-eutectic Si particles, which give better wear resistance and lubrication characteristics than hypo-eutectic Al-Si alloy like A319 alloy. In this study, it was tried to clad hyper-eutectic Al-Si alloy on the surface of A319 alloy. In the experiments, Al-36%Si alloy powder was mixed with organic binder to make a fluidic paste. The paste was screen-printed on the A319 alloy surface, melted by pulsed Nd:YAG laser and alloyed with the A319 base alloy. As experimental parameters, the average laser power was changed to 111 W, 202 W and 280 W. With increasing the average laser power, the melting depth was changed to $142{\mu}m$, $205{\mu}m$ and $245{\mu}m$, and the dilution rate to 67.2 %, 72.4 % and 75.7 %, and the Si content in the cladding layer to 16.2 %, 14.6 % and 13.7 %, respectively. The cross-section of the cladding layer showed very fine eutectic microstructure even though it was hyper-eutectic Al-Si alloy. This seems to be due to the rapid solidification of the melted spot by single laser pulse. The average hardness for the three cladding layers was HV175, which was much higher than HV96 of A319 base alloy. From the block-on-roll wear tests, A319 alloy had a wear loss of 5.8 mg, but the three cladding layers had an average wear loss of 3.5 mg, which meant that an increase of 40 % in wear resistance was obtained by laser cladding.