• 한국진공학회지
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• 제14권4호
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• pp.201-206
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• 2005

본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 방법으로 Si 위에 GaN/AIN/Al/Si 구조를 제작하고, AlN 버퍼층의 두께에 따른 광학적 특성을 조사함으로써 효과적인 eaN 성장을 위한HVPE에서의 공정 방법을 개선하고자 하였다. 이를 위해 Al을 증착한 Si 기판과 그렇지 않은 경우를 PL측정을 통해 그 효과를 관찰하였고, $5{\AA}$ 두께의 Al 대해 AlN 버퍼층의 두께를 변화시켜가면서 GaN를 성장시켜 그 특성을 조사하였다. Al을 증착한 경우가 증착하지 않은 경우에 비해 광학적 특성이 우수한 것으로 나타났으며, AlN의 두께 변화에 대해서는 양질의 GaN를 얻기 위한 최적의 두께는 약 $260{\AA}$ 인 것으로 나타났다. 이 경우 SEM을 이용한 표면사진에서 GaN의 초기성장이 hexagonal형태로 성장되고 있음을 관찰할 수 있었다. 또한 XRD의 회절 패턴은 GaN가 {0001} 방향으로 우선 배향성을 가지고 성장되고 있음을 보여주고 있었다.

• 한국표면공학회지
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• 제31권6호
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• pp.359-370
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• 1998

TiAl-based intermetallic compounds were electro-bornizel in the mixture of $Na_2B_4O_7$, KCL and LiCl in the termetature rage between 850 and $1000^{\circ}C$for various times (1-5 hours)under the fixed current density of 0.5 A/$cm^2$. The optimized composition of electrolyte in this work was decided to be 76.9 wt% $Na_2B_4O_7$-19.2 wt.%(0.7KCl-0.3LiCl) -3.9 wt.% al. The samples with boronized layer were investigated by SEM, XRD and EDS. The surface micro-hardness of boronized TiAl was also evaluated using Micro Vickers Hardness Tester. The sample, boronized at $900^{\circ}C$ for 4 hours in the above composition of electrolyte under the current density of 0.5 A/$\textrm{cm}^2$, has about 36$\mu\textrm{m}$ think layer on the surface, and its surface micro-hardness was measured to be 1263 Hv. From the results of SEM, XRD and EDS, the layer consisted of $TiB_2$ sublayer and Al-oxide sub layer. Al-depleted layer below the Al-oxide sudlayer was also detected. The activation energy for formation of boronized layer in this study was calculated as 178 Kcal/moleK.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• Nuclear Engineering and Technology
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• 제43권2호
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• pp.159-166
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• 2011

Si-rich-layer-coated U-7 wt%Mo plates were prepared in order to evaluate the diffusion barrier performance of the Si-rich layer in U-Mo vs. Al interdiffusion. Pure Si powder was used for coating the U-Mo plates by annealing at $900^{\circ}C$ for 1 h under vacuum of approximately 1 Pa. Si-rich layers containing more than 60 at% of Si were formed on U-7 wt%Mo plates. Diffusion couple tests were conducted in a muffle furnace at $560-600^{\circ}C$ under vacuum using Si-rich-layer-coated U-Mo plates and pure Al plates. Diffusion couple tests using uncoated U-Mo plates and Al-(0, 2 or 5 wt%)Si plates were also conducted for comparison. Si-rich-layer coatings were more effective in suppressing the interaction during diffusion couple tests between coated U-Mo plate and Al, when compared with U-Mo vs. Al-Si diffusion couples, since only small amounts of Al in the coating could be found after the diffusion couple tests. Si-rich-layer-coated U-7wt%Mo particles were also prepared using the same technique for U-7 wt%Mo plates to observe the microsturctures of the coated particles.

• Corrosion Science and Technology
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• 제11권1호
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• 한국분말재료학회지
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• 제25권2호
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• pp.99-103
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• 2018

Spherical monosized pure aluminum (Al) particles are successfully fabricated by the pulsated orifice ejection method (POEM). The surface reaction between Al and the graphite crucible is investigated by analysing the microstructure and chemical composition of the materials. No significant chemical reaction occurs between Al and the graphite owing to the crystalline Al oxide (${\gamma}-Al_2O_3$) layer generated in the initial state. The ${\gamma}-Al_2O_3$ layer is clearly observed in all regions between the Al particles and graphite via transmission electron microscopy and confirmed by the selected area diffraction pattern. The morphology of the ${\gamma}-Al_2O_3$ layer perfectly follows the surface morphology of the graphite crucible, which showed nanoscale roughness. This implies that molten Al could not directly contact graphite even though the surface of the crucible became rough to some extent. However, this passivation phenomenon allowed the successful fabrication of monosized pure Al particles. Therefore, POEM is a useful process at least to manufacture monosized pure Al particles.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.109-110
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• 2013

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1%Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small a mount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1%Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$ however decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• 열처리공학회지
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• 제36권4호
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• pp.198-205
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• 2023

We investigated the effects of Al and Mg on the microstructure and hardness of the coating layer of galvanized steel sheets, by thermodynamic calculations, X-ray diffraction, scanning electron microscopy, and Vickers hardness tests of Zn-0.2Al, Zn-6Al-2Mg, and Zn-10Al-5Mg coating layers. Regardless of the alloy composition of the galvanizing bath, a Fe-Al layer was observed between the coating layer and steel sheet. The Zn-0.2Al coating layer consists of major h.c.p. Zn phase and minor f.c.c. Al phase. The fraction of f.c.c. Al phase (containing a significant amount of Zn) of the coating layer increases with increasing the chemical composition of Al of the galvanizing bath. The h.c.p. MgZn₂ phase was formed in the Al/Mg-containing Zn-6Al-2Mg and Zn-10Al-5Mg coating layers, forming Zn-Al-MgZn₂ eutectic microstructure. The primary MgZn₂ phase was additionally formed in the Zn-10Al-5Mg coating layers containing high concentrations of Al and Mg. The Vickers hardness values of Zn-0.2Al, Zn-6Al-2Mg, and Zn-10Al-5Mg coating layers were 59.1 ± 1.2 HV, 161.2 ± 5.7 HV, and 215.5 ± 40.3 HV, respectively. The addition of Al and Mg increased the hardness of the coating layer by increasing the fraction of the Al phase (containing Zn) and MgZn₂ intermetallic compound, which were harder than the Zn phase.

• 한국재료학회지
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• 제30권11호
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• pp.621-626
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• 2020

This study is aimed at preparing and evaluating the plasma resistance of YAS (Y₂O₃-Al₂O₃-SiO₂) coating layer with crystalline YAG phase contents. For this purpose, YAS frits with controlled phase contents are prepared and melt-coated on sintered Al₂O₃ ceramics. Then, the results of phase analysis of crystalline YAS coating layer are compared to that of YAS frits, and discussed with regard to the plasma resistance of the YAS coating layer. The phase contents of the YAS frit change in a manner different from that of the prepared YAS coating layer, presumably owing to the composition change of YAS frit during the melt-coating process. The plasma resistance of the YAS coating layer is shown to increase with the YAG phase contents in the coating layer. Comparing the weight loss of YAS coating layer with those of commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the prepared YAS coating layer is 8 times higher than that of quartz and 3 times higher than that of Al₂O₃; this layer shows 70 % of the resistance of Y₂O₃.

• 한국세라믹학회지
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• 제34권5호
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.