• 한국응용과학기술학회지
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• 제12권2호
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• pp.157-163
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• 1995

The ultraviolet blocking agents used to skincare are largely classified ultraviolet scattering agent and ultraviolet absorbent agents. There are UVC, UVB, and UBA in ultraviolet ray(UV) showing shorter wavelength than visible light. Both visible light and UVA give rise to 1st dark-skinned phenomena. On exposure of the skin to UV, phenomena of skin variation are termed sunburn or suntan. There are chronic and acute adverse reactions in skin response to UV. The latter is caused by UVB, which has mainly effects on the skin. But lately due to destruction of ozone layer, UVA has more serious irritation on the skin than UVB. In this paper spectrometric properties of UV absorbent agents such as PABA, octyl-PABA, Urocanic acid, and 2-hydroxy-4-methoxy benzophenone in vitro have been investigate. As results, it was found that the three fomer were more suitable than the last. UV scattering measurements on the sample used inorganic pigments showed that pigments containing titanium dioxide had a better scattering effects than the inorganic pigments such as $Fe_2O_3$, $Al_2O_3$, etc.

• 센서학회지
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• 제16권4호
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Progress in Superconductivity
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• 제10권1호
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Tribology and Lubricants
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• 제26권3호
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• pp.162-166
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• 2010

The purpose of this study is to show the friction and wear characteristics on the vapor deposited Tiseries coating layers on the SCM415 steel. In this research, frictional wear characteristic of coating materials such as TiN, TiCN, TiAlN was investigated under room temperature, normal air pressure and dry lubricating condition. Therefore this study carried out research on the friction coefficient, micro hardness(Hv), roughness, SEM on the vapor deposited coating layers on the SCM415 steel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.175-175
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• 2011

최근 석유 자원의 고갈로 인하여 요구되는 대체 에너지 개발의 필요성이 대두되고 있다. 그중 태양에너지는 지구의 생명체가 살아가는 에너지의 근원으로서 매초 800~1,000 W에 달하는 에너지양으로 볼 때 태양은 인류가 가장 풍부하게 활용할 수 있는 에너지원이다. 태양에너지를 이용한 염료감응형 태양전지(Dye-Sensitized Solar Cells, DSSCs)는 제조원가를 낮출 수 있고, 유리 전극을 이용한 투명한 태양전지를 제조할 수 있어 건물의 유리창등으로 응용할 수 있는 장점이있다. 이러한 광변환 효율을 증가시키기 위한 방법으로 전기방사 TiO2 Nanofiber를 기계적으로 갈아서 제조한 TiO2 Nanorod 와 TiO2 Nanoparticle를 섞어서 만든 paste를 이용하여 넓은 표면적과 빠른 전자수송도를 갖게 하였고, 흡착된 염료에서 발생되는 광전자가 전해질의 산화, 환원되는 요오드 이온(I-/I3-)과의 재결합(recombination)현상을 TiO2 전극 위에 높은 밴드갭(band-gap)을 가지는 Al2O3 박막을 TriMethylAluminium (TMA) 전구체를 이용한 원자층 증착(Atomic Layer Deposition, ALD) 공정을 사용하여 진공증착 통해 광전변환효율이 떨어지는 현상을 방지하여 효율을 높였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.85.2-85.2
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• 2018

금속 나노구조체에서의 localized surface plasmon resonance와 surface-enhanced Raman scattering 현상은 센서를 비롯한 다양한 응용분야를 가지고 있다. 나노구조체 array 형성을 위한 대표적인 top-down 방식인 e-beam lithography 공정은 제조비용이 매우 높고 대량생산 및 대면적화에도 한계가 있기에 polystyrene(PS) bead의 self-assembly를 이용한 nanosphere lithography와 같은 bottom-up 방식이 폭넓게 연구되고 있다. Closed-packing된 PS bead의 monolayer를 얻기 위해서는 기판의 친수성 처리가 필요한데, 기존의 많은 연구에서는 기판의 표면개질에 화학적 공정을 이용하고 있다. 하지만 이는 기판 선택의 자유도를 떨어뜨리는 원인이 된다. 금속이나 실리콘 기판에서는 산성 용액을 이용한 화학적 처리방법을 적용할 수 있지만 SU-8과 같은 감광액 및 폴리머 기판에서는 산에 대한 내구성이 떨어져 화학적 공정의 도입이 불가능 하기 때문이다. 본 연구에서는 이러한 한계점을 극복하기 위해 $UV-O_3$ 공정으로 친수성 처리된 다양한 기판에서 spin coating을 통한 PS monolayer를 제조하였는데, UV 램프의 에너지 조절을 통해 기판에 붙어있는 유기물들을 효과적으로 제거할 수 있었고 $O_3$ 생성 및 분해 과정에서 기판 표면에 친수성 화학 작용기를 생성시킬 수 있었다. 제조된 PS layer를 mask로 사용하여 Ag, Al, Au 등 다양한 나노구조체 array를 형성하여 array 주기에 따른 플라즈몬 공명 특성을 분석하였다. 레이저 조사로 나노구조체의 형상을 변화시킴으로써 동일한 물질과 주기를 가진 array에서도 플라즈몬 특성의 변조가 가능함을 확인하였는데, 이는 금속 나노구조체의 응용측면에서 매우 고무적인 발견이다.

• 한국주조공학회지
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• 제17권3호
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• pp.245-251
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• 1997

Solderability, interfacial reaction and mechanical properties of joint between Sn-Bi-Ag base solder and Cu-substrate were studied. Solders were subjected to aging treatments to see the change of mechanical properties for up to 30 days at $100^{\circ}C$, and then also examined the changes of microstructure and morphology of interfacial compound. Sn-Bi-Ag base solder showed about double tensile strength comparing to Pb-Sn eutectic solder. Addition of 0.7wt%Al in the Sn-Bi-Ag alloy increase spread area on Cu substrate under R-flux and helps to reduce the growth of intermetallic compound during heat-treatment. According to the aging experiments of Cu/solder joint, interfacial intermetallic compound layer was exhibited a parabolic growth to aging time. The result of EDS, it is supposed that the soldered interfacial zone was composed of $Cu_6Sn_5$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.