• 한국의학물리학회지:의학물리
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• 제29권4호
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• pp.101-105
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• 2018

In this paper, a neutron moderation system for boron neutron capture therapy (BNCT) based on a $^{252}Cf$ neutron source is proposed. Different materials have been studied in order to produce a high percentage of epithermal neutrons. A moderator with a construction mixture of $AlF_3$ and Al, three reflectors of $Al_2O_3$, BeO, graphite, and seven filters (Bi, Cu, Fe, Pb, Ti, a two-layer filter of Ti+Bi, and a two-layer filter of Ti+Pb) is considered. The MCNPX simulation code has been used to calculate the neutron and gamma flux at the output window of the neutronic system. The results show that the epithermal neutron flux is relatively high for four filters: Ti+Pb, Ti+Bi, Bi, and Ti. However, a layer of Ti cannot reduce the contribution of ${\gamma}$-rays at the output window. Although the neutron spectra filtered by the Ti+Bi and Ti+Pb overlap, a large fraction of neutrons (74.95%) has epithermal energy when the Ti+Pb is used as a filter. However, the percentages of the fast and thermal neutrons are 25% and 0.5%, respectively. The Bi layer provides a relatively low epithermal neutron flux. Moreover, an assembly configuration of 30% $AlF_3+70%$ Al moderator/$Al_2O_3$ reflector/a two-layer filter of Ti+Pb reduces the fast neutron flux at the output port much more than other assembly combinations. In comparison with a recent model suggested by Ghassoun et al., the proposed neutron moderation system provides a higher epithermal flux with a relatively low contamination of gamma rays.

• 한국재료학회지
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• 제28권6호
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• pp.361-364
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• 2018

Binary Ti-Al alloys below 51.0 mass%Al content exhibit a breakaway, transferring from parabolic to linear rate law. The second $Al_2O_3$ layer might have some protectiveness before breakaway. Ti-63.1 mass%Al oxidized at 1173 K under parabolic law. Breakaway oxidation is observed in every alloy, except for Ti-63.1 mass%Al. After breakaway, oxidation rates of the binary TiAl alloys below 34.5 mass%Al obey almost linear kinetics. The corrosion rate of Ti-63.1 mass%Al appears to be almost parabolic. As content greater than 63.0 mass% is found to be necessary to form a protective alumina film. Addition of Mo improves the oxidation resistance dramatically. No breakaway is observed at 1123 K, and breakaway is delayed by Mo addition at 1173 K. At 1123 K, no breakaway, but a parabolic increase in mass gain, are observed in the Mo-added TiAl alloys. The binary Ti-34.5 mass%Al exhibits a transfer from parabolic to linear kinetics. At 1173 K, the binary alloys show vary fast linear oxidation and even the Mo-added alloys exhibit breakaway oxidation. The 2.0 mass%Mo-added TiAl exhibits a slope between linear and parabolic. At values of 4.0 and 6.0 mass% added TiAl alloys, slightly larger rates are observed than those for the parabolic rate law, even after breakaway. On those alloys, the second $Al_2O_3$ layer appears to be persistently continuous. Oxidation resistance is considerably degraded by the addition of Mn. Mn appears to have the effect of breaking the continuity of the second $Al_2O_3$ layer.

• 대한전기학회논문지
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• 제44권10호
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.530-532
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• 2008

Inorganic metal multi-layer(IMML) consisting of Al/Al:SiO/Al was developed as a cathode for OLED to reduce the reflectance generated from ambient light. Device structure of green OLED was ITO/2-TNATA/$\alpha$-NPD/$Alq_3$:C545T/Balq/$Alq_3$/LiF/IMML and IMML was composed of three different layers: thin aluminum layer, aluminum layer doped with silicon monoxide and thick aluminum layer. Average reflectance of green OLED was 9.63% while that of conventional OLED with or without polarizer showed the average reflectance of 8.54% and 66% respectively at visible range from 380 nm to 780 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.316-316
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• 2014

Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.

• 한국표면공학회지
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• 제35권4호
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• pp.193-198
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• 2002

Alloys of XD45 (Ti45A12Nb2Mn-0.8vol%TiB$_2$) and XD47 (Ti47A12Nb2Mn-0.8vol%TiB$_2$) were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The oxide scales consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of ($TiO_2$+$Al_2$$O_3$). Nb tended to present at the lower part of the oxide scale, whereas Mn at the upper part of the oxide scale. The Pt marker tests indicated that the outer oxide layer grew primarily by the outward diffusion of Ti and Mn, and the inner mixed layer by the inward transport of oxygen.

• 한국표면공학회지
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• 제15권2호
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• pp.69-76
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• 1982

With a view to manufacturing membranes for separation of gas mixtures, Al foils were anodized in a 2% oxalic-acid electrolyte at 40V and 80V. When anodizing was completed and Barrier layer existed at the extreme back site of the foil, the anodized foil was made to react with only electrolyte, with switching off the electric power. When the size and density of pores were changed through voltage change, the membr-anes did not show large difference in the permeability. Reacting with electrolyte, the existing Barrier layer turns into porous layer. During this process, several small pores grow from one relatively large pore, getting to the back site. The number and size of the small pores getting to the back surface increase as time passing. This change of Barrier layer into porous layer is thought to be directly related to the permeability change of the membranes. The selectivity of an anodized Al membrane was not related to the voltage change, and was high, being similar to the theoretical selctivity of metallic membranes, according to my observation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.81-84
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• 2003

Conductive polyaniline(PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3V, whereas that of ITO/P3HT/LiF/Al device shows 5V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.677-680
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• 2009

DC influence between pixel electrode and alignment layer (AL) in in-plane switching mode LCD was analyzed through DC equivalence-circuit equation induction, DC charge-discharge simulation, luminance and residual-DC measurement systems using test patterned (TP) cell. DC discharging rate (DDR) of single layer electrode was faster than that of double layer electrode and DDR of low resistance AL was faster than that of high resistance AL. DC discharging characteristics had a close relation to layer number and resistance between two electrodes.

• ETRI Journal
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• 제43권5호
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.