• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.264-267
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• 2015

AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al₂O₃/AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multi-layers was prepared according to the Ar and (N₂ + O₂) gas-mixture rates. The Al₂O₃ of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.

• 공업화학
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• 제23권5호
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• pp.501-504
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• 2012

본 연구에서는 균일하고 높은 비율의 에치 피트를 갖는 알루미늄 전극을 제작하기 위해 소프트 리소그래피를 이용하여 알루미늄 표면에 보호층을 형성하였다. 알루미늄 표면 위에 잘 정돈된 보호층을 형성하기 위해 다양한 방법을 시도하였으며, 보호층을 이용한 알루미늄 에칭과 보호층이 존재하지 않는 알루미늄 에칭을 비교 관찰하였다. 보호층을 이용하여 알루미늄 에칭을 진행하였을 때, 알루미늄 표면에 균일한 에칭 표면이 확인되었으나, 보호층이 존재하지 않았을 때는 불균일한 표면 에칭이 관찰되었다.

• 한국재료학회지
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• 제22권11호
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• pp.591-597
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• 2012

For heat exchanger applications, 2-ply clad materials were fabricated by rolling of aluminum (Al) and mild steel sheets. Effects of annealing temperature on interface properties, especially on inter-layer formation and softening of strain hardened mild-steel, for Al/mild steel clad materials, were investigated. To obtain optimum annealing conditions for the Al/mild steel clad materials, annealing temperature was varied from room temperature to $600^{\circ}C$. At the annealing temperature about $450^{\circ}C$, an inter-layer was formed in an island-shape at the interface of the Al/mild steel clad materials; this island expanded along the interface at higher temperature. By analyzing the X-ray diffraction (XRD) peaks and the energy dispersive X-ray spectroscopy (EDX) results, it was determined that the exact chemical stoichiometry for the inter-layer was that of $Fe_2Al_5$. In some samples, an X-layer was formed between the Al and the inter-layer of $Fe_2Al_5$ at high annealing temperature of around $550^{\circ}C$. The existence of an X-layer enhanced the growth of the inter-layer, which resulted in the delamination of the Al/mild-steel clad materials. Hardness tests were also performed to examine the influence of the annealing temperature on the cold deformability, which is a very important property for the deep drawing process of clad materials. The hardness value of mild steel gradually decreased with increasing annealing temperature. Especially, the value of hardness sharply decreased in the temperature range between $525^{\circ}C$ and $550^{\circ}C$. From these results, we can conclude that the optimum annealing temperature is around $550^{\circ}C$ under condition of there being no X-layer creation.

• 연구논문집
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• 통권34호
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• pp.139-146
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• 2004

In this study, effect of temperature and time on melt-out of 25wt% Al-alloyed ductile iron has been investigated. The oxidation tests were carried out in a tube furnace at $800^\circC$, $930^\circC$, and $1000^\circC$ for lh, 5h, 10h, 50h. The microstructure, microhardness, and $Al_2O_3$ layer of oxidation-treated 25wt% Al-alloyed ductile iron samples (10 x 10 x 10 mm) were investigated. Phase identification was performed by X-ray diffraction(XRD) and EDS. The oxidation-treated 25wt% Al-alloyed ductile iron samples at $930^\circC$ for lh, 5h, 10h and KS GCD 500 were used for melt-out test in an Al alloy melt. The melt-out test results showed that oxidation tested sample at $930^\circC$ for 5h which on the whole forms $2-3\mum$ $Al_2O_3$ layer showed lowest melt-out depth. It was observed showed that appropriate Al203 layer can affect melt-out behaviors.

• 한국표면공학회지
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• 제25권5호
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• pp.253-261
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• 1992

Ti-Al intermetallic compounds which can be used in gas turbine at elevated temperature were inves-tigated in order to improve oxidation resistance by the formation of protective oxide scale. Four Ti-Al alloys were prepared by plasma arc melting. As the amount of Al was increased among the alloys, oxida-tion resistance was improved by the formation of relatively purer Al2O3 layer. However, the alloys which have less amount of Al formed a duplex layer of Al2O3 and TiO2. When samples were oxidized in pure oxygen instead of air, oxidation resistance was improved because of formation of the purer Al2O3 layer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.37-40
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• 2000

This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al：Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.345-346
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• 2008

We have studied an emission spectra of top-emssion organic light-emitting diodes(TEOLED) due to a change of cathode and organic layer thickness. Device structure is Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/cathode. And two different types of cathode were used; one is LiF(0.5nm)/Al(25nm) and the other is LiF(0.5nm)/Al(2nm)/Ag(30nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layer was kept to be about 2:3. Al and Al/Ag double layer cathode devices show that the emission spectra were changed from 490nm to 560nm and from 490nm to 560nm, respectively, when the total organic layer increase. Full width at half maximum was changed from 67nm to 49nm and from 90nm to 35nm as the organic layer thickness increases. All devices show that view angle dependent emission spectra show a blue shift. Blue shift is strong when the organic layer thickness is more than 140nm. Devece with Al/Ag double layer cathode is more vivid.

• 한국분말재료학회지
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• 제22권6호
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• pp.408-412
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• 2015

This study attempts to manufacture a Ni-Cr-Al-Y coating layer using a kinetic spray process and investigates the microstructure and physical properties of the manufactured layer. The Ni-22Cr-10Al-1Y (wt.%) composition powder is used, and it has a spherical shape with an average diameter of $23.7{\mu}m$. Cu plate is used as the substrate. Optical microscope, X-ray diffraction, scanning electron microscope and Vickers hardness test are carried out to characterize the macroscopic properties of the coating layer. Furthermore, the coating layer underwent vacuum heat treatment at temperatures of $400^{\circ}C$ and $600^{\circ}C$ for 1 hour to check the effect of heat treatment temperature on the properties. The manufactured coating layer is 1.5 mm thick, and featured identical phases to those found in the powder. The porosity of the coating layer is measured at 2.99%, and the hardness is obtained at $490.57H_v$. The layer shows reduced porosity as heat treatment temperature increased, and hardness is reduced at $400^{\circ}C$ but shows a slight increase at $600^{\circ}C$. Based on the findings described above, this study also discusses possible manufacturing methods for a Ni-Cr-Al-Y coating layer using the kinetic spray process.

• 한국진공학회지
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• 제19권3호
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• pp.211-216
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• 2010

$In_{0.5}Al_{0.5}As$ 버퍼층(buffer layer)의 성장온도 변화에 따른 $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ 다중양자우물(multiple quantum wells: MQWs)의 광학적 특성을 photoluminescence (PL)와 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. $In_{0.5}Al_{0.5}As$ 버퍼층은 $320^{\circ}C$에서 $580^{\circ}C$까지 다양한 온도조건에서 $1{\mu}m$ 성장하였으며, 그 위에 6 nm, 4 nm, 그리고 2.5 nm 두께의 $In_{0.5}Ga_{0.5}As$ 양자우물(quantum well)과 10 nm 두께의 $In_{0.5}Ga_{0.5}As$ 장벽(barrier)의 MQWs을 성장하였다. 낮은 온도($320-480^{\circ}C$)에서 성장한 InAlAs 버퍼층의 MQWs는 4 nm QW과 6 nm QW로부터 모두 PL 피크가 측정되었으나, 높은 온도($320-580^{\circ}C$)의 버퍼층 위에 성장한 MQWs는 6 nm QW에서의 PL 피크만 관찰되었다. 일정한 온도 $480^{\circ}C$에서 성장한 버퍼층의 MQWs의 PL 세기가 가장 강하게 측정되었으며, 가장 높은 온도에서($530-580^{\circ}C$)에서 성장한 버퍼층의 MQWs의 PL 세기가 가장 약하게 나타났다. 이러한 PL 결과로부터 $In_{0.5}Al_{0.5}As$ 버퍼층의 최적의 성장조건은 일정한 온도 $480^{\circ}C$임을 확인하였다. 방출파장에 따른 PL 소멸시간(decay time)과 PL 스펙트럼으로부터 4 nm QW과 6 nm QW에서의 운반자 수명시간을 얻었다.

• 한국표면공학회지
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• 제1권1호
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• pp.14.1-18
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• 1967

The characteristics of sulfuric acid anodized layer was studied under various Conbitions, acid concentration : 5-20%, temperature : 5-25$^{\circ}C$, bath voltate : 16 volts , bath agitain : mech agitation : mechanical . The Al+++ ion increase in anodizing baty, the film thickness under microscope, the comparative porosity and the thickness were determined. It was found that film thickness and the porosithy which are the main factors of determining andoized layet quality, rule the corrosing and abrasiion tesistance of the film, and that the porosity is increasing in the outerlayer. The formation mechanism was assumed as follows : The film thickness -increase is due to OH_ ion diffusion into compact non-conductive layer and Al+ + OH_ \longrightarrowAl(OH), Al(OH)+ + OH_ \longrightarrowAl(OH)+$_2$ , Al(OH)+$_2$ + OH_ \longrightarrowAl(OH)$_3$., the strong adhesion force is alse due to Al(OH) or Al(OH)$_2$ in transtion layer. And the pore-nucleation is produced by volume change between Al and Al$_2$O$_3$ and activated H$_2$O gas created by large reaction heat of Al+(x) +OH_ \longrightarrowAl(OH)x.