• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.336-339
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• 2004

In this paper the two-dimensional scattering rates were calculated in pseudomorphic Al/sub x//Ga/sub 1-x//As/Ga/sub y/In/sub l -y//As/GaAs heterostructure systems. The electronic states of the square quantum well were determined by the numerical self-consistent solution of Poisson's and Schrodinger's equations. The numerically obtained wave functions and energy levels were used to obtain the major two-dimensional scattering rates in this structure. Polar optical- and acoustic-phonon scattering, piezoelectric, ionized impurity and alloy scattering were considered for the first two sub-bands. The results were compared to the three-dimensional scattering rates also calculated in the same region.

• Resources Recycling
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• v.31 no.2
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• pp.20-32
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• 2022

This study implemented a chelating agent (Ethylenediaminetetraacetic acid, EDTA) in purification to obtain high-purity vanadium pentoxide (V₂O₅) for use in VRFB (Vanadium Redox Flow Battery). V₂O₅ (powder) was produced through the precipitation recovery of ammonium metavanadate (NH₄VO₃) from a vanadium solution, which was prepared using a low-purity vanadium raw material. The initial purity of the powder was estimated to be 99.7%. However, the use of a chelating agent improved its purity up to 99.9% or higher. It was conjectured that the added chelating agent reacted with the impurity ions to form a complex, stabilizing them. This improved the selectivity for vanadium in the recovery process. However, the prepared V₂O₅ powder exhibited higher contents of K, Mn, Fe, Na, and Al than those in the standard counterparts, thus necessitating additional research on its impurity separation. Furthermore, the vanadium electrolyte was prepared using the high-purity V₂O₅ powder in a newly developed direct electrolytic process. Its analytical properties were compared with those of commercial electrolytes. Owing to the high concentration of the K, Ca, Na, Al, Mg, and Si impurities in the produced vanadium electrolyte, the purity was analyzed to be 99.97%, lower than those (99.98%) of its commercial counterparts. Thus, further research on optimizing the high-purity V₂O₅ powder and electrolyte manufacturing processes may yield a process capable of commercialization.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.195-201
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• 1997

The present paper describes the effect of dry mixed grinding on kaolinite-aluminum trihydroxide mixture with a planetary ball mill before sintering and its influence on mullite formation during sintering. The size reduction of the mixture is market in the early stage of grinding and the obtained fine particles agglomerate subsequently with an increase of grinding time. The crystal structure of the mixture is collapsed easily into an amorphous one by planetary ball milling, of which amount increases with an increase of grinding time. Only mullite phase except for anatase as an inherent impurity in kaolinite appeared in the sintered body of the mixtures with mixed grinding as relatively lower temperature 1523K, while corundum, cristobalite, and Al-Si spinel phases, besides mullite were formed in the sintered body of the mixture without mixed grinding. Therefore, the mixed grinding treatment is very effective to improve the homogeneous mixing and disp-ersion of the mixture of raw materials on a micro scale and to decrease the thermal decomposition tem-perature by crystal structure change of them so as to obatin direct preparation of mullite with high purity at relatively low temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.162-162
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• 2012

Sub 100 nm의 Complementary Metal-Oxide-Semiconductor (CMOS) 소자를 구동하기 위해서는 2.0 nm 이하의 $SiO_2$ oxide에 해당하는 전기적 특성이 요구된다. 그러나 2.0 nm 이하의 $SiO_2$에서는 누설 전류가 너무 크기 때문에 이를 대체하기 위해서 유전 상수 (dielectric permittivity)가 높은 $HfO_2$ (${\varepsilon}=25$), $Al_2O_3$, $HfO_2/Al_2O_3$ laminate 등의 high-k dielectric 물질들이 연구되고 있다[1]. High-k dielectric 물질의 전기적 특성은 박막 조성, 두께 및 전극과의 계면에 생성되는 계면 층이나 불순물(Impurity) 거동에 크게 의존하므로 High-k dielectric/전극(Metal or Si) 구조에서 조성 및 불순물의 거동에 대한 정확한 평가가 주요 쟁점으로 부각되고 있다. 이를 평가하기 위해 일반적으로 $Ar^+$ ion에 의한 depth profiling 분석이 진행되나 Oxygen 원자의 선택적 식각에 기인된 분석 깊이 분해능(Depth Resolution) 왜곡으로 계면 층의 형성이나 불순물의 거동을 정확하게 평가할 수 없다. 이러한 예로는 $Ta_2O_5$ 및 $SrBi_2Ta_2O_9$와 같은 다 성분 계 산화막에 $Ar^+$ ion 주사 시 발생하는 선택적인 식각(Preferential Sputtering) 때문에 박막의 실제 조성 및 거동을 평가하는 것은 어렵다고 보고된 바 있다[2,3]. 본 연구에서는 $90{\AA}$인 적층 $Hf_xO_y/Al_xO_y/Hf_xO_y$ 구조에서의 불순물 거동 분석 능력 확보 상 주요 인자인 깊이 분해능 개선을 Secondary Ion Mass Spectroscopy(SIMS)의 primary ion 종, impact energy 및 주사 각도를 변화시켜 ~1 nm 수준까지 구현하였다. 이러한 분석 깊이 분해능의 개선은 Low Impact Energy, 입사 이온의 glancing angle 및 Cluster ion 적용에 의존하며 이들 요인의 효과에 대해 비교/고찰하고자 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.327-333
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• 1999

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina bi-crystal had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press. The morphological change and the growth od crystals formed by heat treatment in Ca doped high purity single crystal alumina, were observed using optical microscopy. The dot was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO . $6Al_2O_3$, were observed on the inner surface of 100ppm Ca implanted specimen after 1 hour heat treatment at $1,500^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at $1,600^{\circ}C$. This disappearance means that there should be little increase of Ca solubility limit to alumina and/or changes of diffusion coefficient of Ca in alumina around this temperature.

• Journal of the Mineralogical Society of Korea
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• v.32 no.3
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• pp.213-222
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• 2019

Birnessite (birnessite, $7{\AA}$ manganate, ${\delta}-MnO_2$) is a major mineral comprising manganese nodule. Various synthetic methods have been studied and evaluated because it can be used as an ion exchange agent and a battery recharging material. However, it is difficult to obtain a single birnessite phase because it does not have a stoichiometric chemical composition. Feitknechtite (${\beta}-MnOOH$) is formed as an intermediate product during birnessite synthesis and in this study, the transition of this phase to birnessite was compared by using XRD and SEM. Two different methods, Feng et al. (2004) and Luo et al. (1998), based on redox reaction were used. It was possible to obtain the impurity-free birnessite for the sample aged 60 days at $27^{\circ}C$ by Feng et al. (2004) method and 3 days at $60^{\circ}C$ by Luo et al. (1998) method. The phase transition rate of the feitknechtite phase was slower in the case of $Mg^{2+}$ doped birnessite which was synthesized by Luo et al. (1998) method, and almost single phase almost single phase birnessite was identified at high temperature. Crystal surface and morphology also confirmed the difference between the samples synthesized by two methods.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1022-1025
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• 2005

The effect of substrate surface to the formation of ZnO nanostructures has been investigated using Si (111), $Al_2O_3$(C-plane) $Al_2O_3$(A-plane), and $Al_2O_3$(R-plane) substrates. The growth temperature was controlled from 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$, and the luminescence properties were investigated by a series of photoluminescence (PL) measurements at the elevating temperatures. ZnO nanostructures grown on Si substrate show strong UV emission intensity along with green emission positioned at 3.22 eV and 2.5 eV, respectively. However, green emission was not observed from the ZnO nanostructures grown on $Al_2O_3$ substrates. It is explained in terms of the difference of the surface energy between Si and $Al_2O_3$. Also, the origin of UV emissions has been discussed by using the temperature-dependent PL. The distinction of the PL spectra is interpreted in terms of the difference of the impurity included in the nanostructures.

• Tribology and Lubricants
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• v.23 no.4
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• pp.143-148
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• 2007

The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.302-307
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• 1999

We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.828-831
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• 2001

A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO$_3$)$_3$, Ga(NO$_3$)$_3$, HBO$_3$, or H$_3$PO$_4$. An essential improvement of bonding interface structural quality was detected and a model for the explanation is suggested. Diode, Dynistor, and BGGTO structures were fabricated and examined. Their switching characteristics are presented.