• Advances in environmental research
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• 제5권2호
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• pp.141-151
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• 2016

Large amounts of aluminum hydroxide ($Al(OH)_3$) exist in water purification sludge (WPS) because of the added aluminum coagulant in water treatment process. Notably, $Al(OH)_3$ is an amphoteric compound, can be dissolved in its basic condition using sodium hydroxide to form aluminate ions ($Al(OH)_4{^-}$). However, in a process in which pH is increasing, the humid acid can be dissolved easily from WPS and will inhibit the recovery and reuse of the dissolved aluminate ions. This study attempts to fix this problem by a novel approach to separate $Al(OH)_4{^-}$ ions using nanofiltration (NF) technology. Sludge impurity in a alkaline solution is retained by the NF membrane, such that the process recovers $Al(OH)_4{^-}$ ions, and significantly decreases the organic matter or heavy metal impurities in the permeate solution. The $Al(OH)_4{^-}$ ion is an alkaline substance. Experimental results confirm that a recovered coagulant of $Al(OH)_4{^-}$ ion can effectively remove kaolin particles from slightly acidic synthetic raw water.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.27-27
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• 2008

The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

• 한국결정학회지
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• 제10권1호
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• pp.83-87
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• 1999

부유대용융법에 의하여 전이금속, 희토류금속, 및 3A족 금속이온의 종류와 농도를 조절하면서 Rutile 단결정을 성장하였으며, 결정결함과 1.55 ㎛에서의 광 투과도에 미치는 각 불순이온의 영향을 조사하였다. 주입된 불순이온 중에서 양호한 결정형을 나타내는 이온은 V5+, Fe3+, Al3+, Zr4+, Ga3+, Sc3+이었으며, Al3+, Zr4+, Sc3+ 이온은 우수한 투과도를 나타내었다. 성장된 결정 중에서 가장 양호한 결정형을 제공하고, 산소결핍 및 low-angle grain boundaries의 형성을 최대로 억제하며, 양호한 투과도를 나타낸 우수한 품질의 Rutile 단결정은 TiO2 99.4 at%-Al2O3 0.6 at%로 평가되었다.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.54-57
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

• 한국주조공학회지
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• 제15권5호
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• pp.507-513
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• 1995

The effect of forced convention on the solute redistribution of the Al ingot was studied quantitatively in an effort to fabricate high purity aluminum using a segregation method. Based on the experimental results, the solute concentration in the solid phase tended to decrease at the early state of solidification, and then increased gradually as solidification proceeded. Fe and Si concentrations decreased as growth rate decreased and as revolution speed increased. The solute redistribution obtained from the BPS model incorporated with the tangential flow component as well as the axial flow component within the melt, agreed well with the measurements.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권5호
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• pp.214-216
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).

• 한국세라믹학회지
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• 제34권8호
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• pp.834-842
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• 1997

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina single crystal, sapphire, had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press technique. The morphological change and the healing of cracklike pore in Ca doped high purity single crystal alumina, sapphire, during high temperature heat treatment in vacuum were observed using optical microscopy. The dot-like surface roughening was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO.6Al2O3, were observed on the inner surface after 1 hour heat treatment at 1, 50$0^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at 1, $600^{\circ}C$. This disappearance means that there should be a little increase of Ca solubility limit to alumina at this temperatures.

• 한국주조공학회지
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• 제24권1호
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• pp.45-51
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• 2004

Fe and Si are common impurity elements in the aluminum alloys. In this investigation, the effects of the addition of Fe and Si on the age-hardening behaviors of the Al-Cu-Mn-Ti-Zr-Cd casting alloys were examined through hardness measurements, calorimetric techniques and observation of the transmission electron microscopy. The addition of Fe depresses the formation of GPII and ${\theta}'$, and thus retards the peak aging time and reduces the peak hardness of the Al-Cu-Mn-Ti-Zr-Cd alloys. On the contrary, the addition of Si accelerates the formation of GPII and ${\theta}'$ and thus accelerates age-hardening behaviors of the Al-Cu-Mn-Ti-Zr-Cd alloys.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.187-190
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• 1997

The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

• 한국진공학회지
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• 제9권3호
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• pp.233-236
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• 2000

TFT-LCD(thin film transistor-liquid crystal display) 패널의 데이터 배선 재료로 사용하기 위하여 AlW(3 wt%)의 Al합금 박막을 dc 마그네트론 스퍼터링 방법으로 유리 기판에 증착하여 열처리전과 열처리 후의 박막 특성을 조사하였다. 또한 TFT-LCD의 식각 공정상에서 발생할 수 있는 chemical attack에 대한 저항성을 확인하기 위하여 순환전압전류법(cyclic voltammetry)을 사용하여 Ag/AgCl 전극에 대한 ITO와 AlW alloy의 전극 전위를 측정하였다. 증착된 박막을 $350^{\circ}C$에서 20분간 열처리하였을 때 AlW 박막은 비저항이 감소하였고 약 $11\;{\mu\Omega}cm$의 다소 높은 비저항 특성을 보였다. 주사전자현미경(SEM)과 원자힘현미경(AFM)으로 표면을 분석한 결과 좋은 힐록방지 특성을 보임을 알 수 있었다. 순환전압전류법을 사용하여 측정한 Ag/AgCl 에 대한 ITO의 전극 전위은 약 -1.8V이었고, AlW alloy의 전위 전극은 W의 wt.%가 3% 이상이었을 때, ITO의 전극 전위보다 작게 나타났다. 따라서 측정된 특성 값을 볼 때 AlW(over 3 wt.%) 박막은 data bus line으로 사용할 수 있는 것으로 나타났다.