• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.66-69
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• 2017

Physically implanted surface islands of Nano Carbon Tube (NCT) and ${\alpha}-F_2O_3$ particles have been produced on Al-doped ZnO (AZO)/glass surfaces by simple and direct ND:YAG laser beam irradiation. Sheet resistance of the reconstructed surface increased by about 3.6% of over AZO. Minimal surface damage can be repaired by ND:YAG laser beam irradiation in conjunction with proper impurities. Implanted islands of NCT, which are considered to be a good conductive impurity, on AZO increased the sheet resistance by about 1.8%, while implanted islands of ${\alpha}-F_2O_3$, an insulating impurity, on AZO increased sheet resistance by about 129% compared with a laser beam treated AZO. This study provides insight regarding surface implantations of nanowires and micro-circuits, doping effects for semiconductors and optical devices, surface area and impurity effects for catalysis.

• 한국분말재료학회지
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• 제10권3호
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• pp.195-200
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• 2003

Ni coated $Al_2O_3$ composite was successfully Prepared by the electroless deposition Process. The average size of Ni particles coated on the $Al_2O_3$ matrix powder was about 20 nm. It was hard to find any reaction compound as an impurity at interface between $Al_2O_3$ and Ni particles after sintering. The characterization of microstructure crystal structure and fracture behavior of the sintered body were investigated using XRD, TEM and Victors hardness tester, and compared with those of the sintered $Al_2O_3$ monolithic body. Many dislocations were observed in the Ni phase due to the difference of thermal expansion coefficient between $Al_2O_3$ and Ni phase, and no observed microcracks at their $Al_2O_3$ and Ni interface. In the $Al_2O_3$/Ni composite, the main fracture mode showed a mixed fracture with intergranular and transgranuluar type having some ,surface roughness. The fracture toughness was slightly increased due to the plastic deformation mechanism of Ni phase in the $Al_2O_3$/Ni composite.

• 한국재료학회지
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• 제14권8호
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• pp.547-551
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• 2004

The sulfidation behaviour of Fe-XAl-0.3Y(X=5, 10, 14, 25 $wt.\%$) alloys was investigated at 1123 K in $H_2/H_{2}S$ gas atmosphere for $1\sim24$ hrs using SEM/EDX, XRD and EPMA. The weight changes of Fe-XAl-0.3Y alloys followed the parabolic rate law, Sulfidation rates of iron aluminide alloys with high Al content were one-twentieth lower than that of 5Al alloys. This is due to the formation of protective $Al_{2}O_3$ oxides on the surface of 10Al, 14Al and 25Al alloys. By calculating partial pressure of impurity oxygen contained $H_2/H_{2}S$ gas, the $Al_{2}O_3$ oxides formation could be explained using Fe-Al-S-O thermodynamic stability diagram. The sulfidation product scales of the 5Al alloy showed that thick iron sulfide scale(FeS) containing porosities formed during early stages of sulfidation. With continued sulfidation, aluminum sulfide was formed at the alloy/scale interface.

• 대한전자공학회논문지
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• 제21권3호
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• pp.60-65
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• 1984

본 논문은 광통신용 광원의 가장 중요한 설계변수인 주파수응답의 최적화를 위하여 대칭 CaAs/(Ca, Al)As DH-LED를 모델로 채택하여 다이오드의 설계변수들인 활성층의 불순물농도, 활성층폭, 소수캐리어수명, 금지대폭, 굴절률, 공간전하용량, 주입전류밀도 등의 물리적 제인자들의 백호관계를 체계적으로 정립하여 컴퓨터 시뮬레이션에 의한 최적설계변수치들을 설정하는데 그 목적이 있다.

• 센서학회지
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• 제6권6호
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• pp.500-507
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• 1997

형상기억 합금의 정밀한 동작 온도 조절을 위한 불순물의 종류에 따른 형상기억합금의 열처리 효과를 연구하였다. 급냉온도에 따른 전기 저항 측정으로 Cu-17.25Zn-15Al 및 Cu-17.25Zn-15Al-1Ag/Fe 의 열처리에 의한 마르텐사이트 변태온도의 변화를 측정하였다. 승온율에 따른 DSC(Differential scanning calorimeter) 측정으로 고온모상에서의 상전이 온도와 종류를 구별하였다. 그리고 XRD 측정으로 구조 변화를 관찰하였다. Cu-17.25Zn-15Al 합금에서 고온 모상의 규칙-불규칙 전이온도인 $T_{B2}$, $T_{L21}$은 각각 809K와 610K이고. Cu-17.25Zn-15Al-1Ag 및 Cu-17.25Zn-15Al-1Fe 시료의 $T_{B2}$, $T_{L21}$은 각각 794K, 610K 그리고 803K, 613K 이다. 모든 시료에서 $T_{B2}$ 근방에서의 급냉은 마그텐사이트. 변태온도를 높이지만 $T_{L21}$ 근방에서의 급냉은 마르텐사이트 변태온도를 낮춘다.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• 열처리공학회지
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• 제11권3호
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• pp.200-206
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• 1998

The aim of this study is to investigate the effect of impurity level and fabrication processes on the strength, impact and fracture toughness of 7075, 7050 and 7175 aluminum alloy forgings. A specially processed 7175S-T74 aluminum forgings was superior to a conventionally processed 7075-T73, 7050-T74 and 7175-T74 aluminum forgings in both strength and toughness. The reduction of impurity level of iron and silicon has significantly diminished the size and volume fraction of second phase particles such as $Al_7Cu_2Fe$ and $Mg_2Si$. A further reduction of the amount of second phase particles has been observed by applying a special fabrication process. This phenomena result from the application of intermediate soaking at higher temperature and more sufficiant hot working temperature than that of a conventional processing.

• 한국재료학회지
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• 제27권10호
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• pp.544-551
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• 2017

In order to develop a new commercial Al-12%Si casting alloy with improved physical properties, we investigated the effect of adding Sr and TiB to the alloy. Al-12%Si alloys were prepared by die casting at $660^{\circ}C$. The eutectic temperature of the Sr-modified Al-12%Si alloy decreased to $9^{\circ}C$ and the mushy zone region increased. The shape of the Si phase changed from coarse acicula to fine fiber with the addition of Sr. The addition of TiB in the Al-12%Si alloy reduced the size of the primary ${\alpha}$-Al and eutectic Si phases. When Sr and TiB were added together, it worked more effectively in refinement and modification. The density of twins in the Si phase-doped Sr increased and the width of the twins was refined to 5 nm. These results are related to the impurity induced twinning(IIT) growth.

• 한국표면공학회지
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• 제49권5호
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.