• Applied Chemistry for Engineering
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• v.8 no.6
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• pp.939-944
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• 1997

The films of zeolite X on the surface of metal sieve were prepared by continuous crystallization method. It is known that the growth of zeolite crystal on the surface of metal is mainly dependent on the surface composition of metal sieve. In the present work, the zeolite nuclei could be easily formed as Cr content on the metal surface was removed by acid treatment. In order to investigate the proedure growing of zeolite crystal by the continuous crystallization method, the composition of zeolite X($6.36Na_2O-Al_2O_3-5.3SiO_2-190.8H_2O$)was supplied every 12hour. Then the mechanism and inter-relationship between the metal surface and nucleation are investigated. The results show that as the content of silica increases in the gel mixture, the nuclei of zeoilite are easily formed on the metal surface. Also, it was confirmed that the particle of zeolite stuck on the metal surface continues the linear growth. The particles are combined by the reaction of polycondensation, and finally become the shape of crystal. The sample synthesized by the film type was confirmed as zeolite X by the analyses of SEM and XRD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Restorative Dentistry and Endodontics
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• v.34 no.1
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• pp.61-68
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• 2009

This study was performed to assess the radiopacity of a variety of root canal sealers according to the specification concerning root canal sealers. Ten materials including Tubli-$Seal^{TM}$. Kerr Pulp Canal $Sealer^{TM}$, AH $26^{(R)}$, AH $plus^{(R)}$, AH plus $jet^{TM}$, Ad sea $1^{TM}$. $Sealer^{TM}$, $NOGENOL^{TM}$, ZOB $seal^{TM}$, $Epiphany^{TM}$ and dentin were evaluated in this study. In the first part, densitometric reading of an each step of aluminum step wedge on occlusal film was performed at different voltage and exposure time. In the second part, ten specimens were radiographed simultaneously with an aluminum step wedges on the occlusal films under decided condition. The mean radiographic density values of the materials were transformed into radiopacity expressed equivalent thickness of aluminum (mm Al). The following results were obtained. 1. Among the various conditions, the appropriate voltage and exposure time that meet the requirement density was 60 kVp at 0.2 s 2. All of the materials had greater radiopacity than 3 mm Al requirement of ANSI/ADA specification No. 57 (2000) and ISO No. 6876 (2001) standards. 3. The radiopacity of materials increased as thickness of materials increased. 4. The mm Al value of each specimen at 1mm in thickness has a significant difference in the statistics. It suggests that root canal sealers have a sufficient radiopacity that meet the requirement.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.95-95
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• 2018

강재의 방식법 중 도장은 부식을 억제하는데 효과적이고 편리한 방법으로 선박 및 해양 강 구조물의 방식법으로 사용되고 있다. 한편, 강 구조물의 효율적인 유지관리를 위해서는 방식 도장의 도막 열화도를 평가하고 잔존 수명을 예측하여 최적 시기에 보수도장 혹은 재도장하는 것이 필요하다. 일반적으로 선박 및 해양구조물에 적용되는 도막의 방식 성능 평가 방법으로 해수 침지 시험, 염수 분무 시험, 옥외 폭로 시험 등이 있다. 그러나 이러한 시험들은 그 시험 방법에 따라서 정량적인 평가에 한계가 있음은 물론 장기간 소요되는 등 곤란한 문제점이 있다. 그러므로 선박 및 해양구조물을 비롯하여 교량, 각종 강 구조물의 도장 방식에 사용되는 방식용 도료의 성능을 단기간에 적절하게 평가할 수 있는 가속시험법이 제시되며 연구-사용되고 있다. 그 중 도막 방식 성능을 보다 효율적, 비파괴적, 정량적으로 평가할 수 있는 임피던스 분광법(EIS)과 같은 전기화학적 방법은 상대적으로 시험 기간을 크게 단축시킬 수 있고, 대상 방식 도장의 미세한 성능 차이도 분별 가능하다는 장점이 있다[1]. 따라서 본 연구에서는 선박 및 해양구조물 등 가혹한 부식환경에서 강력한 내구성을 가질 수 있도록 다양한 종류의 표면처리 도장 시편을 제작하여 자외선 조사-염수분무-침지환경 등의 열악한 환경조건 하에서 부식-열화 촉진 시험을 실시하였다. 그리고 그 촉진 열화 과정에서 도막의 외관 상태를 관찰 분석함은 물론 전기화학적 임피던스 분광법을 병행 측정하며 그 표면막의 부식 및 도막 열화도를 비교-종합 평가하였다.본 연구에 사용된 시편은 Al 및 Zn 도금 강판에 에폭시, 에폭시-실리콘 우레탄, 에폭시-우레탄 도장 시편으로 Scribe, No Scribe 및 비교재 Al 및 Zn 도금 시편으로 분류하여 각각 실험을 진행하였다. 즉, 도막 열화 시험은 복합 노화 시험법으로 UV 조사 36 시간(ASTM G53), 염수분무 32 시간(ISO 7253), 수분 응축 10 시간을 1 Cycle로 100 Cycle(7800 시간) 동안 실험을 진행하였다. 이때 도막 열화도 평가는 전기화학적 임피던스 분광법을 이용하여 각 실험 조건별로 주파수에 따른 임피던스(Z) 값을 평가하였다. 즉, 상온 $25^{\circ}C$의 3.5% NaCl 100 ml 수용액에 작동 전극(Working Electrode)과 구리 도선을 통해 연결하였고, 노출 면적은 $1cm^2$로 일정하게 유지 하였으며, 상대 전극(Counter Electrode)은 탄소봉, 기준 전극(Reference Electrode)으로 포화카로멜전극(Saturated Calomel Electrode)을 사용하여 측정하였다. No Scribe 시편의 경우에는 Al 기판 에폭시-실리콘 우레탄 도장 시편이 우수한 도막 저항성을 나타내었으며, 에폭시-우레탄 도장시편은 23사이클 이후의 저항값이 가장 낮게 나타났다. Zn 기판의 경우는 에폭시, 에폭시-실리콘 우레탄, 에폭시-우레탄 도장 시편 모두 저항 값이 유사하였으며, Al 및 Zn 도금 시편은 도장 처리된 시편에 비해 훨씬 낮은 저항 값을 보였다. 또한 Scribe 시편의 경우에는 Al 기판 에폭시-실리콘 우레탄 도장 시편에서 높은 초기 저항 값을 보였으며, 23 사이클 후의 저항 값은 세 종류의 도막에서 약 1~0.1 Gohm 으로 나타났다. 그리고 Zn 기판 에폭시-실리콘 우레탄 도장 시편에서 가장 낮은 도막 저항 값이 나타났다. 이상의 실험을 통해서 본 연구 내용은 실내촉진시험으로 선박 및 해양 강 구조물에 사용되는 다양한 종류의 도막의 열화도를 평가하는 기초 설계 지침으로 응용될 수 있을 것으로 사료된다. 한편, 도막은 노출 환경에 따라 방식 성능이 다르므로 실제 도막의 사용환경을 고려하여 도장 사양별 적용 부위에 따른 적정 가속 실험 방법을 선정할 필요가 있다고 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Journal of the Korean Society of Food Science and Nutrition
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• v.38 no.12
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• pp.1767-1772
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• 2009

Brined Baechu cabbages were packed with different films of high density polyethylene (HDPE), aluminium polyethylene (Al/PE), nylon polyamide (Ny/PE), low density polyethylene (LDPE) and permeability-controlled polyethylene (Mirafresh (MF), US patent No. 5972815), and then stored at 4${^{\circ}C}$ for 4 weeks. Changes in quality characteristics of pH, acidity, total bacteria counts, lactic acid bacteria counts, E. coli counts, texture and $O_2$ concentration were determined during the storage. The pH of brined Baechu cabbage packed with Mirafresh (MF) film was 6.25 after 4 weeks from initial pH of 6.80. The acidity of all brined Baechu cabbages increased, however, the increase of the cabbage in MF was the lowest. The levels of total bacteria, lactic acid bacteria and E. coli in the cabbages packed with MF were also lower than the other films. After 4 weeks, of all brined springiness Baechu cabbages decreased, but MF showed relatively high springiness. The $O_2$ concentrations by its permeation through MF were 0.35%-1.00% at 4-25${^{\circ}C}$ after 1 week. In conclusion, MF was found to be the most effective packaging film for brined Baechu cabbage to extend shelf-life.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.22-27
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• 2017

$TiO_2$ films, thickness of $1{\sim}30{\mu}m$ were deposited on glass substrate at room temperature by room temperature granule spray in vacuum. The starting powder was calcinated at $600^{\circ}C$ for 4 h using $Al_2O_3$ crucible in the furnace. The particle size of the $TiO_2$, $1.5{\mu}m$ was measured by a particle size analyzer. The effect of different process parameters such as number of pass, gas flow rate and feeder voltage was studied. As the number of passes increased, the film thickness increased proportionally due to adequate kinetic energy conserved. The effect of three different flow rates (i.e. 15, 25, and 35 LPM) on deposited film was investigated. As gas flow rate increased, the film thickness increased up to 25 LPM and then decreased. Higher feeder voltage with low flow rate of 15 LPM resulted in unsufficient coating thickness due to insufficient kinetic energy. Microstructure of $TiO_2$ films was investigated by scanning electron microscope and high resolution tramission electron microscope.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.