• Title/Summary/Keyword: Al films

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Muller matrix ellipsometry 제작 및 응용

  • 방경윤;경재선;오혜근;김옥경;안일신
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.12-17
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    • 2003
  • We develop Mueller-matrix spectroscopic ellipsometry based on dual compensator configuration. This technique is very powerful for measuring surface anisotropy in nano-scale, especially when materials show depolarization. Dual-rotating compensator configuration is adopted with the rotational ratio of 5:3 originally developed by Collins et al [1]. The instrument can provide 250-point spectra over the wavelength range from 230 nm to 820 nm in one irradiance waveform with minimum acquisition time of $Tc{\approx}10 s$. In this work, the results obtained in transmission modes are presented for the initial attempt. We present calibration procedures to diagnose the system from the utilize data collected in transmission mode without sample. We expect that the instrument will have important applications in thin films and surfaces that have anisotropy and inhomogeneity.

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A Study on Development of Advanced Environmental-Resistant Materials Using Metal Ion Processing

  • Fujita Kazuhisa;Kim Hae-Ji
    • Journal of Mechanical Science and Technology
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    • v.20 no.10
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    • pp.1670-1679
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    • 2006
  • The development of the oxidation, wear and corrosion resistant materials that could be used in severe environmental conditions is needed. The elementary technologies for surface modification include ion implantation and/or thin film coating. Furthermore, in order to develop ion implantation technique to the specimens with three-dimensional shapes, plasma-based ion implantation (PBII) techniques were investigated. As a result, it was found that the ion implantation and/or thin film coating used in this study were/was effective for improving the properties of materials, which include implantations of various kinds of ions into TiAl alloy, TiN films formed on surface of base material and coatings in high-temperature steam. The techniques proposed in this study provide useful information for all of the material systems required to use at elevated temperature. For the practical applications, several results will be presented along with laboratory test results.

Characteristics of AZO-NiO thin films for p-type GaN semiconductor in GaN LED TCEs by using magnetron co-sputtering methode (GaN LED의 p형 반도체 투명 접촉 전극용 마그네트론 2원 동시 방전법을 통해 증착한 NiO-AZO 박막의 특성 평가)

  • Park, Hui-U;Bang, Jun-Ho;Hui, K.N.;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.180-181
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    • 2011
  • 기존의 GaN LED에 사용되어지고 있는 p형 GaN 반도체의 Ni/Au 투명 접촉 전극을 제조할 때 발생하는 오염과 공정을 줄이고 발광효율을 향상시킬 수 있는 투명 접촉 전극을 제작하기 위해 마그네트론 2원 동시 방전법을 사용하여 AZO-NiO 박막을 증착 하였다. Al 원자 함량에 따른 AZO-NiO 박막의 구조적, 전기적, 광학적 특성을 조사하였다.

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The study of ZnO crystalline improvement of FBAR (DC sputter로 증착한 ZnO 박막의 결정성 향상에 관한 연구)

  • Lee, Kyu-Il;Kim, Eung-Kwon;Lee, Tae-Yong;Hwang, Hyun-Suk;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.322-323
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    • 2005
  • We deposited Zinc oxide (ZnO) thin films on Ru buffer layer in order to protect the amorphous layer between ZnO and Al interface. In X-ray diffraction (XRD) pattern, it was observed that increase of (002)-orientation by the variation of annealing treatment temperature. Also, surface roughness and specific resistance were increased by annealing treatment but full width at half maximum (FWHM) was decreased. In film bulk acoustic resonators (FBARs) fabricated from these results, we finally confirmed that the resonant frequency of 0.89 GHz without its shift was measured.

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Fabrication and Reliability Properties of Thin film Resistors with Low Temperature Coefficient of Resistance (낮은 저항온도계수를 갖는 박막 저항체 제작 및 신뢰성 특성 평가)

  • Lee, Boong-Joo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.4
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    • pp.352-356
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    • 2007
  • The Ni/Cr/Al/Cu (51/41/4/4 wt%) thin films were deposited by using DC magnetron sputtering method for the application of the resistors having low TCR (temperature coefficients of resistance) and high resistivity from the former printed-results[3]. The TCR values measured on the as-deposited thin film resistors were less than ${\pm}10\;ppm/^{\circ}C$ and $-6{\sim}+1\;ppm/^{\circ}C$ after annealing and packaging process. The TCR values were $-3{\sim}1\;ppm/^{\circ}C$ (ratio of variation : about 0.02 %) and $-30{\sim}20\;ppm/^{\circ}C$ (ratio of variation : about $0.5{\sim}1\;%$) for the thermal cycling and PCT (pressure cooker test), respectively. It was confirmed that the reliability properties of the thin film resistor were good for electronic components.

Characteristics of Optical TiN Films upon RF power (RF 출력의 변화에 따른 광학용 TiN 박막의 특성 연구)

  • 손영배;김남영;황보창권
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.172-173
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    • 2000
  • TiN 박막은 부착력이 좋은 기계적 성질을 갖고 있으며 화학적 안정성이 뛰어난 장점을 갖고 있어 수명이 긴 박막으로 사용 할 수 있다. 또한 반도체 집적 회로소자에서는 Al과 Si 사이의 확산 방지막으로 널리 사용하고 있으며, 티타늄과 질소의 화학 조성비를 적절히 조절하여 노란 금빛을 띠는 TiN 박막을 시계나 장신구 등의 표면에 코팅하여 장식에도 많이 사용하고 있다$^{[1]}$ . 최근에는 얇은 전도성 TiN 박막을 사용하여 무반사 영역을 넓히고, 무정전 효과를 지니며, TiN 박막의 두께를 변화시켜 투과율을 조절하여 명도대비(contrast)를 향상시킬 수 있는 2층 무반사 무정전 박막을 연구하고 있다.$^{[2]}$ 여기서는 티타늄과 질소의 원소조성비에 따른 TiN 박막의 복소수 굴절률의 분산이 단 2층으로 넓은 가시광선 영역에서 무반사 효과를 가질 수 있도록 TiN 박막을 증착해야 한다. (중략)

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Properties of Al Films Deposited on Steel Sheets with Magnetron Sputtering and Oblique Angle Deposition (스퍼터링과 빗각증착으로 코팅된 알루미늄 코팅층의 특성)

  • Yang, Ji-Hun;Jeong, Jae-Hun;Song, Min-A;Park, Hye-Seon;Jeong, Jae-In
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.265-265
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    • 2012
  • 스퍼터링을 이용하여 금속을 코팅하면 대부분 주상정 형태의 미세구조로 성장한다. 금속 코팅층의 미세구조를 코팅공정으로 제어하여 치밀한 구조의 코팅층을 합성하기 위해서 평형(balanced magnetron)과 비평형(unbalanced magnetron) 스퍼터링에 의한 박막 구조 변화를 비교하고, 빗각 증착(oblique angle deposition) 효과가 코팅층의 미세구조에 미치는 영향을 확인하였다. 실험에 사용된 타겟은 6 인치 직경의 알루미늄이었으며 기판은 실리콘 웨이퍼와 냉연강판이 사용되었다. 알루미늄 코팅층은 주사전자현미경으로 미세구조를 관찰하였으며, 미세구조 변화가 내부식 특성에 미치는 영향을 평가하기 위해서 알루미늄이 코팅된 냉연강판의 염수분무 시험을 실시하였다. 빗각 증착에 의한 코팅층 미세구조 변화가 가장 두드러지게 나타났으며, 빗각 증착에 의해서 알루미늄 코팅층이 치밀해지는 현상을 관찰할 수 있었다. 알루미늄이 코팅된 냉연강판을 분석한 결과, 빗각 증착으로 코팅된 알루미늄 코팅층이 두께 약 $3{\mu}m$에서 염수분무 200 시간 후에도 적청이 발생하지 않는 우수한 내식성을 보였다.

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Property Variations of ZnO-based MOS Capacitor with Preparation Conditions (ZnO를 사용한 MOS 커패시터의 제작 조건에 따른 특성 변화)

  • Nam, H.G.;Tang, W.M.
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.3
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    • pp.75-78
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    • 2010
  • In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.

Metal Ion-Containing Langmuir-Blodgett Films of a Monooctadecyl Itaconate Copolymer

  • 손종현;최기선;이범종;Kazue Kurihara
    • Bulletin of the Korean Chemical Society
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    • v.16 no.4
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    • pp.316-320
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    • 1995
  • The incorporation of metal ion into the Langmuir-Blodgett (LB) film of an itaconate copolymer was investigated. The polymer was prepared via radical copolymerization of monooctadecyl itaconate with triethyleneglycol methyl vinyl ether. The metal ions employed were Na+, Cs+, Mg2+, Fe2+, Al3+, and Fe3+. The surface pressure-area isotherms indicated that all the monolayers studied on subphases with metal ions showed more expanded areas than that observed on pure water. The monolayers showed an irreversible collapse behavior. The collapse pressure of the monolayers was low on subphases containing trivalent metal ions. From the FT-IR spectra by reflection and transmission modes, the formation of carboxylate salts and the uprisen orientation of the pendant against substrate surface in the polymer LB film were determined. It was estimated by XPS measurement that ca. 13.1 repeat units of the polymer contain one Na+ ion, while one Mg2+ ion corresponds to 5.9 carboxyls.