• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Proceedings of the Membrane Society of Korea Conference
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• 1993.04a
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• pp.34-34
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• 1993

세라믹 분리막은 유기질 막에 비하여 열적, 기계적 및 화학적으로 안정하기 때문에 기존의 유기질 막을 사용하기 어려운 작업 조건 하에서도 응용의 잠재성을 가지고 있다. 본 실험은 disk형태의 다공성 $Al_2O_3$ 담체위에 CVD 법과 Evaporation Oxidation 법에 의해 $Al_2O_3$를 코팅하여 세라믹 분리막을 제조하였다. CVD법에 의한 제조는 Al-isopropoxide를 350$\circ$C에서 담체위에 증착시켜 제조하였으며, Evaporation-Oxidation 법에 의한 제조는 Al을 담체위에 evaporation 시킨 후 dry oxidation 시켜서 제조하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.980-985
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• 1987

The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.349-358
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• 1995

The ceramic composite membrane was synthesized by thermal oxidation after evaporation of Al on the support prepared by slip casting process. Oxidation was performed at $700^{\circ}C$ and 80$0^{\circ}C$ under dry oxygen atmosphere. It was considered as optimum oxidation condition that the membrane showed a knudsen behaviro. A further oxidation resulted in an increase of gas permeability because top layer became densified. Then, a multi-layered composite membrane was synthesized through a sol-gel method, evaporation and thermal oxidation of Al coating processes. While the membrane was thermally stable up to 80$0^{\circ}C$, gas permeability was rapidly decreased even at a slight amount of deposition of Al.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.207-215
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• 2000

Al films on cold-rolled steel sheet have been prepared by vacuum evaporation and arc-induced ion plating, respectively, and the evaporation rate and vapor distribution (thickness distribution over the substrate) have been investigated according to deposition conditions. The arc-induced ion plating (AIIP) method have been employed, which makes use of arc-like discharge current induced by ionization electrode located near the evaporation source. The AIIP takes advantage of high ionization rate compared with conventional ion plating, and can be carried out at low pressure of less than $10^{-4}$ torr. Very high evaporation rate of more than 2.0 mu\textrm{m}$/min could be achieved for Al evaporation using alumina liner by electron beam evaporation. The geometry factor n for the $cos^{n/\phi}$ vapor distribution, which affects the thickness distribution of films at the substrate turned out to be around 1 for vacuum evaporation, while it features around 2 or higher for ion plating. For the ion plated films, it has been found that the ionization condition and substrate bias are the main parameters to affect the thickness distribution of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1026-1029
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• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.4
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• pp.514-522
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• 1999

The laser-induced plasma affects greatly on the results of welding process. moreover selective evaporation loss of alloying elements leads to change in chemical composition of weld metal as well as the mechanical properties of welded joint. this study was undertaken to obtain a fundamental knowledge of pulsed laser welding phenomena especially evaporation mechanism of different aluminum alloys. The intensities of molecular spectra of AlO and MgO were different each other depeding on the power density of a laser beam Under the low power density condition the MgO band spectrum was predominant in intensity while the AlO spectra became much stronger with an increase in the power density. These behaviors have been attributed to the difference in evaporation phenomena of Al and Mg metals with different boiling points and latent heats of vaporization. The time-averaged plasma temperature and electron number density were determined by spectroscopic methods and consequently the obtained temperature was $3,280{\pm}150K$ and the electron number density was $1.85{\times}10^{19}\;l/m^3$.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Economic and Environmental Geology
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• v.36 no.2
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• pp.103-109
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• 2003

The mineralogy of material left after evaporation of acid mine drainage water is generally dependent on the chemical composition of the source water. The residues formed by the evaporation of acid mine water in the Dong-hae coal mine area consists mainly of gypsum (CaSO$_4${\circ}$2$H_2O$) with mine. amounts of alunogen (Al$_2$(SO$_4$)$_3$${\circ}$17$H_2O$) and hexahydrite (MgSO$_4$${\circ}$<.TEX>6$H_2O$). Gypsum was identified from both of the bottom precipitates and the evaporation residues of acid mine water. Alunogen, an aluminum sulfate hydrate, was also formed by evaporation and occurred as needle-like crystals. Aluminum is derived from chemical dissolution of alumine-silicate mineral such as pyre-phyllite, illite and chlorite in wasted rocks. Hexahydrite in evaporation residues occured as needle-like, fibrous, and acicular crystals and was associated with gypsum and alunogen.

• Journal of Powder Materials
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• v.11 no.2
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• pp.105-110
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• 2004

In this study the possibility to obtain a homogeneous mixture and to produce solid solutions and intermetallic compounds of Fe and Al nano particles by simultaneous pulsed wire evaporation (S-PWE) have been investigated. The Fe and Al wires with 0.45 mm in diameter and 35 mm in length were continuously co-fed by a special mechanism to the explosion chamber and simultaneously exploded. The characteristics, e.g., phase composition, particle shape, and specific surface area of Fe-Al nano powders have been analyzed. The synthesized powders, beside for Al and $\alpha$-Fe, contain significant amount of a high-temperature phase of $\gamma$-Fe, Fe Al and traces of other intermetallics. The phase composition of powders could be changed over broad limits by varying initial explosion conditions, e.g. wire distance, input energy, for parallel wires of different metals. The yield of the nano powder is as large as 40 wt ％ and the powder may include up to 46 wt % FeAl as an intermetallic compound.