• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.163-163
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• 2001

• Analytical Science and Technology
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• v.21 no.3
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• pp.229-236
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• 2008

$C/TiO_2$ composites were prepared with surface modified MWCNT sequentially after HCl treatment and TNB as titanium source. There is a single crystal structure which is anatase in all of the samples from the data of XRD. The SEM microphotographs of $C/TiO_2$ composites show that the $TiO_2$ particles were well mixed with the CNT. There are C, O and Al with strong Ti peaks in all samples from EDX results, and it also shows that the sample CT has much more amount of C and Ti content than that of sample HCT. Finally, the photocatalytic activities for the $C/TiO_2$ composites have more effective than that of pristine $TiO_2$.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.515-519
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• 2011

The purpose of this study was to determine the optimal firing condition and composition for $Al_2TiO_5$ crystal, which is suitable for stable coloration in glazes at high temperatures, using $Cr_2O_3$ as chromophore for the synthesis of $Al_2TiO_5$ system pigments. $Al_2TiO_5$ has a high refractive index and good solubility of chromophore in the $Al_2TiO_5$ lattice, making this structure a good candidate for the development of new ceramic pigments. Pigments were synthesized by using $Al_2O_3$ and $TiO_2$ mainly. Various amounts of $Cr_2O_3$ such as 0.01, 0.02, 0.03, 0.04 and 0.05 mole were also added. Each compound was synthesized at $1300^{\circ}C$, $1400^{\circ}C$, and $1500^{\circ}C$ for 2 hours and cooled naturally. The crystal structure, solubility limit, and color of the synthesized pigments were analyzed by XRD, SEM, Raman spectroscopy, UV and UV-vis. The changes in color as the result of applying 6 wt% of the synthesized pigments to lime barium glaze were expressed as CIE-L*a*b* values. A $Cr_2O_3$ 0.03 mole doped $Al_2TiO_5$ brown pigment was successfully synthesize at $1400^{\circ}C$, and the values of CIE-L*a*b* parameters were L* = 44.62, a* = 3.10, and b* = 17.25. In the case of the pigment synthesized at $1500^{\circ}C$, the brown color was obtained at 0.01 mole and 0.02 mole $Cr_2O_3$, and the CIE-L*a*b* values were 55.34, 1.73, 28.64, and 49.39, 0.51, 21.33, respectively. At $1500^{\circ}C$, the maximum limit of solid solution was 0.03 mole $Cr_2O_3$. The glazed sample showed green color, and the values of the CIEL* a*b* parameters were L* = 45.69, a* = -0.98, and b* = 20.38.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.137-142
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• 1995

Monodispersed $Al_2O_3-TiO_2$ Powder was prepared by metal-alkoxide hydrolsis. A homogeneous nucleation/growth occurred in the solutions containing ethanol, butanol and acetonitrile, and resulted in spherical, submicrometer-sized powder. The titania and the alumina crystals were formed at $800^{\circ}C$ and $1000^{\circ}C$, respectively. These crystala were subsequently reacted each other beyond $1320^{\circ}C$ and formed $Al_2TiO_5$. The relative densities of sintered bodies prepared with as-received powder were examined at the temperature range of 1300-$1500^{\circ}C$ and they were about 79% at $1300^{\circ}C$. The formation of aluminum titanata decreased the relative density at the temperature range of 1300-$1450^{\circ}C$, and at above $1450^{\circ}C$, the relative density started to increase again. It was observed that $\alpha-Al_2O_3$-doped aluminum titanate was more stable than pure aluminum titante at $1200^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.6
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• pp.263-270
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• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.35-41
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• 2017

$TiO_2$, $Al_2O_3$, and $TiO_2-Al_2O_3$ nanolaminated films were grown by atomic layer deposition (ALD) on the 316L stainless steel (SS316L) substrates at a temperature of $150^{\circ}C$. The growth kinetics of $ALD-TiO_2$ and $Al_2O_3$ thin films were systematically investigated in order to precisely control the thickness of each layers in the $TiO_2-Al_2O_3$ nanolaminated films using a high-resolution transmission electron microscopy. And, the exact deposition rates of $ALD-TiO_2$ on $Al_2O_3$ surface and $ALD-Al_2O_3$ on $TiO_2$ surface were revealed to be 0.0284 nm/cycle and 0.11 nm/cycle, respectively. At given growth conditions, the microstructures of $TiO_2$, $Al_2O_3$ and $TiO_2-Al_2O_3$ nanolaminated films were amorphous. The potentiodynamic polarization test revealed that the $TiO_2-Al_2O_3$ nanolaminated film coated SS316L had a best corrosion resistance, although all ALDcoated SS316L exhibited a clear improvement of the corrosion resistance compared with a bare SS316L.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.510-515
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.85-92
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• 1994

Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.