• International Journal of Highway Engineering
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• v.18 no.4
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• pp.55-61
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• 2016

PURPOSES : The objective of this study was to determine the relationship between the dielectric characteristics of asphalt mixtures and the air voids present in them using ground penetrating radar (GPR) testing. METHODS : To measure the dielectric properties of the asphalt mixtures, the reflection coefficient method and the approach based on the actual thickness of the asphalt layer were used. An air-couple-type GPR antenna with a center frequency of 1 GHz was used to measure the time for reflection from the asphalt/base layer interface. A piece of aluminum foil was placed at the interface to be able to determine the reflection time of the GPR signal with accuracy. An asphalt pavement testbed was constructed, and asphalt mixtures with different compaction numbers were tested. After the GPR tests, the asphalt samples were cored and their thicknesses and number of air voids were measured in the laboratory. RESULTS : It was found the dielectric constant of asphalt mixtures tends to decrease with an increase in the number of air voids. The dielectric constant values estimated from the reflection coefficient method exhibited a slight correlation to the number of air voids. However, the dielectric constant values measured using the approach based on the actual asphalt layer thickness were closely related to the asphalt mixture density. Based on these results, a regression equation to determine the number of air voids in asphalt mixtures using the GPR test method was proposed. CONCLUSIONS : It was concluded that the number of air voids in an asphalt mixture can be calculated based on the dielectric constant of the mixture as determined by GPR testing. It was also found that the number of air voids was exponentially related to the dielectric constant, with the coefficient of determination, $R^2$, being 0.74. These results suggest that the dielectric constant as determined by GPR testing can be used to improve the construction quality and maintenance of asphalt pavements.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.131-134
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• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.5-8
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• 2009

In this paper, a high-quality low-temperature co-fired ceramic (LTCC) solenoid inductor using a solder ball and an air cavity on a silicon wafer for three-dimensional (3-D) system-in-package (SiP) is proposed. The LTCC multi-layer solenoid inductor is attached using Ag paste and solder ball on a silicon wafer with the air cavity structure. The air cavity is formed on a silicon wafer through an anisotropic wet-etching technology and is able to isolate the LTCC dielectric loss which is equivalent to a low k material effect. The electrical coupling between the metal layer and the LTCC dielectric layer is decreased by adopting the air cavity. The LTCC solenoid inductor using the solder ball and the air cavity on silicon wafer has an improved Q factor and self-resonant frequency (SRF) by reducing the LTCC dielectric resistance and parasitic capacitance. Also, 3-D device stacking technologies provide an effective path to the miniaturization of electronic systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.276-279
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• 2008

Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.4
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• pp.40-46
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• 1995

The characteristics of the shielded suspended substrate coplanar waveguide(SSCPW) are analyzed by applying the point matchning method to the quasi-TEM mode approximation. The characteristic impedances and the effective dielectric constants are also calculated by changing the height of air and dielectric layer, and the strip width of SSCPW. Approaching the side strip width of SSCPW to zero, values of characteristic impedances and effective dielectric constants are agreed well with the results obtained by the variational method.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.442-446
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• 2002

Design of microwave absorbers using high frequency properties of fiber reinforced composites are investigated. Two kinds of composite materials (glass and carbon) are used and their complex permittivity and permeability are measured by transmission/reflection technique using network analyzer. Low dielectric constant and nearly zero dielectric loss are determined in glass fiber composite. However, carbon fiber composites show the high dielectric constant and large conduction loss which is increased with anisotropy of fiber arrangement. It is, therefore, proposed that the glass and carbon fiber composites can be used as the impedance transformer (surface layer) and microwave reflector, respectively. By inserting the foam core or honeycomb core (which can be treated as an air layer) between glass and carbon fiber composites, microwave absorption above 10 dB (90% absorbance) in 4-12 GHz can be obtained. The proposed fiber composites laminates with sandwitch structure have high potential as lightweight and high strength microwave absorbers.

• 연구논문집
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• s.25
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• pp.185-192
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• 1995

The solid/liquid interface migration in Nb-doped $SrTiO_3$ and its effect on dielectric properties have been investigated. The specimen sintered in air shows no migration during oxide infiltration treatment in air, whereas the specimen sintered in $5H_2-95N_2$ shows appreciable migration during similar infiltration. In the migrated layers of the specimen sintered in a reducing atmosphere, no cations of the infiltrants are detected by wavelength dispersive spectroscopy. These results show that nonstoichiometry due to the atmosphere change can induce the interface migration as in the case of frequently observed migrations due to solute concentration change. The driving force for the migration is discussed in terms of the coherency strain energy in a thin diffusional oxidized layer of the receding grain. The interface migration caused by nonstoichiometry could be suppressed by preoxidizing grain surfaces before oxide infiltration treatment. The suppression of migration increased the effective dielectric constant of the material.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.46-50
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• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.395-400
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• 2021

In this paper, the wideband patch antenna is simulated and manufactured for the wireless LAN of 5GHz band that is defined in IEEE 802.11a. In the 802.11a, 200 channels of 675MHz are defined. Therefore, the bandwidth is needed more than 12.3%. For the wideband characteristics, low dielectric constant is realized with the multi-layer of 2 teflon substrates and the air dielectric layer and the feeding method of the coupled-line is used. Optimized wideband patch antenna is simulated with the return loss of 38.99dB at the center frequency of 5.43GHz and the bandwidth of 12.9%. The gain of manufactured patch antenna is 4.38, 4.52, and 5.12dBi at the channel number of 46, 56, and 153, respectively.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.87-91
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• 2013

The doping effect of Sn on the microstructure evolution and dielectric properties was studied in $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals. Samples were produced by a conventional solid-state reaction method. Sintering was carried out at $1115^{\circ}C$ for 2-16 h in air. The dielectric constant and loss were examined at room temperature over a frequency range between $10^2$ and $10^6$ Hz. The microstructure was found to evolve into three stages. Addition of $SnO_2$ led to an increase in density and advanced formation of abnormal grains. The formation of coarse grains with a reduced thickness of the boundary brought about an enhanced dielectric constant and a lower dielectric loss below ~1 kHz. EDS data showed the Cu-rich phase along the grain boundary, which should contribute to the improved dielectric constant according to the internal barrier layer capacitor model. After all, $SnO_2$ was an effective dopant to elevate the dielectric characteristics of $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals as a promoter for abnormal grain growth.