• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1959-1961
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• 1999

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.134-134
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• 2010

We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.545-551
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• 2004

Magnetic suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing Ag$_2$O. Magnetic flux measurements of a toroidal magnet revealed a concave shaped field distribution with a null field along the axis of the torus at the point where the field reversed. The suspension effect was observed only for the Ag$_2$O doped and field cooled sample which is attributed to the enhanced flux pinning due to the field cooled condition. It has been cleared that Ag$_2$O acts as pinning center which plays an important role to the magnetic suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet has been investigated. It has been concluded that the magnetic suspension effect arises from the interaction between the pinning effect and the diamagnetic effect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.590-590
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• 2012

A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.234-238
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• 1995

In this parer, by means of adding nonsuperconductive phase sliver into YBCO matrix, the superconductivity of Melted Texture Growth (MTG) YBa$_2$Cu$_3$O$\_$7-x/ was improved remarkably. In order to eliminate the crack inthe YBCO and the weak linkin the grain boundary, Ag contents from 2wt% to 18Wt% were doped in the YBCO It was found that J$\_$c/ of YBCO increase with the increasing Ag content till 14 wt% over 14wt% of Ag content, the Jc tends to stable . The grain size of YBCO became fine when Ag was added in the YBCO and X-ray diffraction showed that the YBCO crystal prepared by the above technique had (001) orientation and growing plane of YBCO was a-b plane. Using Bens medel, the J$\_$c/ was calculated and the best result was J$\_$c/ 76000A$\textrm{cm}^2$(77K, 100Gs).

• 한국진공학회지
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• 제1권1호
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• pp.126-133
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• 1992

E-Beam 기법을 이용하여 증착시킨 Ag doped CdS 박막은 육방정계이고 공기, Ar 분위기에서 $^550{\circ}C$로 열처리한 결과 grain size가 1$mu extrm{m}$ 정도로 성장되었고, Van Der Pauw 방법으로 구한 Hall data로부터 CdS crystal은 n형 반도체이고 상온에서의 carrier 농 도는 2.7 $\times$ 1011cm-3이고 Hall mobility는 5.8 $\times$ 102cm2V-1sec-1정도임을 알 수 있었다. CdS : Ag 박막의 PL spectra는 Gaussian curve를 보여주었고, spectra peak는 파장이 520nm 근처에 위치하고 있으며, CdS : Ag 박막에서의 광전류(pc)와 암전류(dc)의 ratio(pc/dc)는 공기 중에서 열처리한 시료의 값이 크다는 것을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.39-44
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• 2014

Glass discs functionalized with alkynyl (GDA) terminated monolayers were prepared and incubated in $AgNO_3$ solution (GDA-Ag). The modified functional glass surfaces were characterized by X-ray photoelectron microscopy (XPS). The potential of GDA and GDA-Ag as antimicrobial surfaces was investigated. Anti-microbial efficacies of GDA against Escherichia coli, Pseudomonas aeruginosa, Staphylococcus aureus, Bacillus cereus, and Candida albicans was relatively low ranging from 4.67 to 17.00%. However, the GDA-Ag was very effective and its antimicrobial efficacy ranged from 99.90 to 99.99% against the same set of microbial strains except for C. albicans where it was 95.50%. The durability of the Ag bonded to the terminal alkynyl groups was studied by placing the GDA-Ag in PBS buffer solution (pH 7.4) for two weeks. Initially, the silver release was relatively fast, with 40.05 ppb of silver released in first 24 h followed by a very slow and constant release. To study the potential of GDA-Ag for medical applications, in vitro cytotoxicity of GDA-Ag against Human Embryonic Kidney 293 (HEK293) cell lines was studied using WST-assay. The cytotoxicity of the GDA-Ag was very low (5%) and was almost comparable to the control (blank glass disc) indicating that GDA-Ag has a promising potential for medical applications.

• Bulletin of the Korean Chemical Society
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• 제22권12호
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• pp.1371-1374
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• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.