• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.251-253
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• 2007

현재 다이아몬드 공구에서 극세선에 브레이징 공정을 이용하여 다이아몬드를 접합하는 기술은 국내외 적으로 전무한 상태이다. 이 연구는 금속 와이어에 다이아몬드를 브레이징을 실시하여 최적의 와이어 브레이징 공정법을 개발 하는데 있다. 다이아몬드와 금속필러메탈 접합 계면에서의 금속성분과 탄화물의 거동을 분석하며, 브레이징에 따른 와이어의 물성 변화를 관찰하였다. 금속필러로는 Ag-Cu-5Ti(wt.%)을 사용하였으며, 와이어는 스테인리스를 이용하였다. 브레이징 공정은 진공 접합 장치를 이용하여 $800{\sim}1000^{\circ}C$에서 유지시간 $5{\sim}30$분로 실시하였다. 브레이징된 다이아몬드는 $900{\sim}950$도, 유지시간 10분 사이에서 각각 건전한 계면과 표면을 얻을 수 있었으며, 계면에서 Ti-rich상과 화합물이 확인되었다. 또한 열처리 따른 와이어의 최적의 건전한 상태를 고찰 하였다. 다이아몬드와 Ag계 브레이징 필러의 계면에서의 미세조직 및 화학반응의 메커니즘은 SEM, EPMA, XRD를 이용하여 분석하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.434-435
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• 2009

The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.187-187
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• 2011

지르코니아 ($ZrO_2$) 표면에 금속 (Au)으로 표면 코팅한 후 Ti-6Al-4V와 진공 브레이징 접합을 행하였다. 표면에 코팅한 Au 층의 영향을 비교 분석하기 위하여 Au를 코팅하지 않은 지르코니아도 모재로 사용하였다. 접합소재로는 Ag-Cu-Ti계 active filler를 사용하였다. $ZrO_2$/Ti-6Al-4V 브레이징 결과, active filler는 양측 모재 표면에 wetting 되었으며, Ti-6Al-4V 내부로 filler 확산으로 인하여 두 모재의 direct joint가 관찰되었다. 접합 계면 사이에 접합부 결함은 관찰되지 않았다.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• Journal of the East Asian Society of Dietary Life
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• v.10 no.6
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• pp.507-513
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• 2000

This study was conducted to investigate the shelf life of beef stored in antimicrobial pottery during 12days storage at 4'C and Five kinds of antimicrobial potteries were prepared with antimicrobial materials such as TiO$_2$, Ag (NO$_3$)$_2$, Cu(NO$_3$)$_2$ and Zn(NO$_3$)$_2$. In changes of color during storage, Hunter's L- and b-value of beef were not changed, but Hunter's a-value was low significantly. The pH of beef meats were low at 6 days, but were added from 6 days. TBA value of beef in "A" pottery containing TiO$_2$ 1% and "C" Pottery containing TiO$_2$ 0.5%, Cu(NO$_3$)$_2$ were lower than "B", "D" and "I" pottery. VBN contents of beef in "A", "B", "C", "D" and "I" Pottery stored during 12 days were 9.8, 12.5, 9.3, 11.9 and 13.7mg%, respectively. In changes of total plate count of beef during storage at 4$^{\circ}C$, the antimicrobial activity of "A" and "C" pottery were superior.g storage at 4$^{\circ}C$, the antimicrobial activity of "A" and "C" pottery were superior.ttery were superior.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.3-9
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• 1999

The grain morphology, the changes in morphology and Jc with the thermo-mechanical treatment (TMT) history, the field dependence of Jc and the nature of intergranular bonding were studied in $T_{10.8}$$Pb_{.2}$$Bi_{0.2}$$Sr_{1.8}$$Ba_{0.2}$$Ca_{2.2}$$Cu_{3}$$O_{z}$/Ag tapes. As a result, incorporation of intermediate rolling during the final heat-treatment resulted in of plate-like TI-1223 grains, and thus enhanced Jc. Jc's near 2.5$\times$104 A/cm2 at 77 K and 0 T were obtained in just rolled tapes with an excellent reproducibility. The high Jc's seem to grain-connectivity easy recovery of excellent grain-connectivity during final heat-treatment after inter -mediate rolling, probably due to retarded T1 evaporation and excessive Ca content in the present composition. The strong field dependence of Jc even in low fields, however, indicated that there still existed significant weak-links and the degree of directional grain-alignment was far from the desired one. The intergranular binding in the tapes seemed to be mainly dominated by SIS junctions.