• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.402-407
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• 2017

Characteristics of various material surface plasmon resonance (SPR) chips were investigated in angular interrogation mode and intensity interrogation mode. Among five metals, silver (Ag), gold (Au), copper (Cu), chromium (Cr) and titanium (Ti), three metals, Ag, Au and Cu were paid attention to since their characteristics can be easily analyzed in angular interrogation mode by investigating the change of their reflectance curves according to refractive index change from 1.331 to 1.335. Most of SPR chips with various configurations showed the similar property in angular interrogation mode. The application of the SPR chip made of Ag, Au and Cu or their combinations depends on their reflectance properties. In intensity interrogation mode, the operation range may be limited since the variation of the intensity was not linearly related to refractive index change ranging from 1.331 to 1.335. However, the SPR chip containing high ratio of Ag may be applicable to high sensitive detection due to their sharp reflectance curves in intensity interrogation mode.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.161-171
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• 1997

Anodic regeneration of PCB enchant and cathodic deposition of copper using electrochemical method has been studied. Cu(I)/Cu(II) concentration ratio as a function of Cu(I) oxidation at the anode was measured from the potential difference between platinum and Ag/AgCl/4M KCl electrodes. Chlorine gas evolution was minimized by maintaining Cu(I) concentration above a specific concentration and using non-porous graphite electrode. Dendritic copper deposition was observed at the cathode and the optimum conditions for Cu deposition was identified as the current density of $360mA/cm^2$, and copper concentration of 12 g/l. Titanium was the most effective cathode material which showed a higher current efficiency and copper recovery. The current efficiency decreased with increasing temperature, but the highest power efficiency was achieved at $50^{\circ}C$.

• Journal of Mechanical Science and Technology
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• v.16 no.9
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• pp.1078-1083
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• 2002

Ceramics are significantly used in many industrial applications due to their excellent mechanical and thermal properties such as high temperature strength, low density, high hardness, low thermal expansion, and good corrosion resistive properties, while their disadvantages are brittleness, poor formability and high manufacturing cost. To combine advantages of ceramics with those of metals, they are often used together as one composite component, which necessiates reliable joining methods between metal and ceramic. Direct brazing using an active filler metal has been found to be a reliable and simple technique, producing strong and reliable joints. In this study, the fracture characteristics of Si$_3$N$_4$ ceramic joined to ANSI 304L stainless steel with a Ti-Ag-Cu filler and a Cu (0.25-0.3 mm) interlayer are investigated as a function of strain rate and temperature. In order to evaluate a local strain a couple of strain gages are pasted at the ceramic and metal sides near joint interface. As a result the 4-point bending strength and the deflection of interlayer increased at room temperature with increasing strain rate. However bending strength decreased with temperature while deflection of interlayer was almost same. The fracture shapes were classified into three groups ; cracks grow into the metal-brazing filler line, the ceramic-brazing filler line or the ceramic inside.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.344-348
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• 2009

The electrolyte effects of the electroplating solution in Cu films grown by ElectroPlating Deposition(EPD) were investigated. The electroplated Cu films were deposited on the Cu(20 nm)/Ti (20 nm)/p-type Si(100) substrate. Potentiostatic electrodeposition was carried out using three terminal methods: 1) an Ag/AgCl reference electrode, 2) a platinum plate as a counter electrode, and 3) a seed layer as a working electrode. In this study, we changed the concentration of a plating electrolyte that was composed of $CuSO_4$, $H_2SO_4$ and HCl. The resistivity was measured with a four-point probe and the material properties were investigated by using XRD(X-ray Diffraction), an AFM(Atomic Force Microscope), a FE-SEM(Field Emission Scanning Electron Microscope) and an XPS(X-ray Photoelectron Spectroscopy). From the results, we concluded that the increase of the concentration of electrolytes led to the increase of the film density and the decrease of the electrical resistivity of the electroplated Cu film.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.49-53
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• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.248-250
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• 2007

이 연구는 cBN과 활성 Ag계 금속필러메탈을 이용하여 접합계면에서의 금속성분과 화합물, 탄화물의 거동을 분석하는데 있다. 진공 브레이징은 $900{\sim}1000^{\circ}C$에서 $25^{\circ}C$ 간격으로, 유지 시간은 각각 5, 10, 15, 20분으로 실시하였다. Ag-Cu-Ti을 사용하여 브레이징된 cBN은 $950{\sim}1000$도, 유지시간 10분 사이에서 각각 건전한 계면과 표면을 얻을 수 있었으며, 계면에서 Ti-rich상과 화합물이 확인되었다. 이상의 결과로 부터 화합물의 생성과 건전한 접합공정은 브레이징 온도와 시간이 좌우하며, N과 B, Ti의 함유량이 cBN의 브레이징 접합 특성의 중요변수로 생각되어진다. cBN과 Ag계 브레이징 필러의 계면에서의 미세조직 및 화학반응의 메커니즘은 DTA, SEM, EPMA, XRD를 이용하여 분석하였다.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.682-688
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• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.1-7
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• 2011

Active brazing of ceramic to metal is reviewed in this paper. As one of the key aspect in joint techniques, active brazing has been developed to simplify the manufacturing procedure of brazed joints between ceramic and metal. The active filler metal includes Ag-Cu-Ti series, Cu-Ti series, Co-Ti series and so on. The active filler metal which supplies the chemical bonds between ceramic and metal, enhances the wetting of filler metal on ceramic surface and eliminates the need for metallization treatments. The residual stress caused by difference of coefficient of thermal expansion between ceramic and metal, holds a direct influence on the bonding strength and even results in a fracture. Good joints of ceramic to metal promote the miniaturization and simplicity of electronic components with multifunction.