• 제목/요약/키워드: Ag-Cu-In-Ti

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고효율, 저가화 실리콘태양전지를 위한 Ni/Cu/Ag 금속전극의 특성 연구 (Investigation of the Ni/Cu metallization for high-efficiency, low cost crystlline silicon solar cells)

  • 이지훈;조경연;이수홍
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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    • pp.235-240
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    • 2009
  • Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

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솔더 층의 증착 순서에 따른 저 융점 극 미세 솔더 범프의 볼 형성에 관한 연구 (Formation of Low Temperature and Ultra-Small Solder Bumps with Different Sequences of Solder Layer Deposition)

  • 진정기;강운병;김영호
    • 마이크로전자및패키징학회지
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    • 제8권1호
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    • pp.45-51
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    • 2001
  • UBM층과의 젖음 특성 및 표면 산화정도가 미세 피치를 갖는 저 융점 솔더 범프의 볼 형성에 미치는 영향을 연구하였다. Au/Cu/Cr 과 Au/Ni/Ti UBM 위에 공정 조성에 가까운 In-Ag와 공정 조성의 Bi-Sn 솔더를 솔더 층의 증착 순서를 달리하여 증발 증착한 후 lift-off 공정과 열처리 공정을 사용하여 솔더 범프를 형성하였다. In-Ag솔더의 경우 In이 UBM 층과 접한 범프가, 또한 Bi-Sn 솔더의 경우 Sn을 먼저 UBM층위에 먼저 증착시켜 리플로 한 범프가 솔더 볼 형성 경향이 다른 범프에 비해 높았다. 구형의 솔더 범프 형성 정도는 UBM 층과의 젖음 특성에 따라 크게 달라졌다.

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AlN 세라믹스와 금속간 계면접합에 관한 연구 : I. AlN/Cu 및 AlN/W 활성금속브레이징 접합체의 잔류응력 해석 (A Study on the Interfacial Bonding in AlN Ceramics/Metals Joints: I. Residual Stress Analysis of AlN/Cu and AlN/W Joints Produced by Active-Metal Brazing)

  • 박성계;이승해;김지순;유희;염영진
    • 한국재료학회지
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    • 제9권10호
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    • pp.962-969
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    • 1999
  • Ag-Cu-Ti 삽입금속을 이용하여 제조된 AlN/Cu와 AlN/W 활성금속브레이징 접합체의 잔류응력을 유한요소법으로 탄성 및 탄소성 해석을 행하여 그 결과를 접합강도 측정 결과와 파단 거동 관찰 결과와 비교, 분석하였다. 최대 잔류 주응력의 크기는 AlN/W 접합체보다 모재간 열팽창계수 차이가 큰 AlN/Cu 접합체에서 더 크게 나타났으며, 접합계면에 인접한 AlN 세라믹스 자유표면에 인장 성분의 응력집중이 확인되었다. 모재와 삽입금속의 탄소성 변형을 모두 고려할 경우, AlN/Cu 접합체의 경우 연질의 삽입금속에 의해 최대 잔류 주응력이 감소하여 소성변형에 의한 응력완화 효과가 있음을 확인하였으나, 100$\mu\textrm{m}$ 이상으로 삽입금속 두께를 증가시키더라도 잔류 주응력의 크기는 더 이상 크게 감소하지 않았다. 측정된 최대 접합강도는 AlN/Cu와 AlN/W 접합체에서 각각 52 MPa와 108 MPa이었으며, 파단 형태는 AlN/Cu 접합체는 AlN 자유표면으로부터 AlN 내부로 큰 각도를 이루면 진행되는 돔형의 파단이, AlN/W 접합체에서는 접합계면의 삽입금속층을 따라 AlN 측에서 파단이 일어나는 형태를 보였다.

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결정질 실리콘 태양전지에 적용될 도금전극 특성 연구 (Investigation of Plated Contact for Crystalline Silicon Solar Cells)

  • 김범호;최준영;이은주;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.192-193
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    • 2007
  • An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electro less plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. In this paper, we investigated low-cost Ni/Cu contact formation by electro less and electroplating for crystalline silicon solar cells.

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다이아몬드 Grit(흑연)/ Cu-13Sn-12Ti 필러합금 진공 브레이징 접합체의 젖음성 및 계면반응 (The wetting and interfacial reaction of vacuum brazed junction between diamond grit(graphite) and Cu-13Sn-12Ti filler alloy)

  • 함종오;;이지환
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2009년 추계학술발표대회
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    • pp.66-66
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    • 2009
  • Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites(diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature 940 $^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.

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다이아몬드 grit(흑연) / Cu-13Sn-12Ti 삽입금속 진공 브레이징 접합체의 젖음성 및 계면반응 (The Wetting and Interfacial Reaction of Vacuum Brazed Joint between Diamond Grit(graphite) and Cu-13Sn-12Ti Filler Alloy)

  • 함종오;이지환
    • Journal of Welding and Joining
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    • 제28권3호
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    • pp.49-58
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    • 2010
  • Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites (diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature $940^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.

Ni buffer layer를 사용한 Si3N4/S.S316 접합체에서 접합계면의 미세구조 변화가 접합체의 기계적 특성에 미치는 영향 (Effects of Microstructural Change in Joint Interface on Mechanical Properties of Si3N4/S.S316 joint with Ni Buffer layer)

  • 장희석;박상환;권혁보;최성철
    • 한국세라믹학회지
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    • 제37권4호
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    • pp.381-387
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    • 2000
  • Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

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Optical and Electrical Properties of Thin Film Electroluminescent Devices with SrS:Cu, Ag Phosphor Layer

  • Chang, Ho-Jung;Park, Jun-Seo;Chang, Young-Chul
    • 마이크로전자및패키징학회지
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    • 제9권1호
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    • pp.29-33
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    • 2002
  • The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

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솔더범프와 Ag-Pd 후막도체의 접합 신뢰성 및 계면반응 (Reliability of Joint Between Solder Bump and Ag-Pd Thick Film Conductor and Interfacial Reaction)

  • 김경섭;이종남;양택진
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.151-155
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    • 2003
  • The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the alumina substrate and the IMC layer between $Sn-37wt\%Pb$ solder and Ag-Pd thick film conductor after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, Ag-Pd conductor pad roughness were increased from 304nm to 330nm. $Cu_6Sn_5$ formed during initial ref]ow process at the interface between TiWN/Cu UBM and solder grew by the succeeding reflow process so the grains had a large diameter and dense interval. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about $0.1\~0.6{\mu}m$. And a needle-shaped $Ag_3Sn$ was also observed at the inside of the solder.

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브레이징 온도 변화에 따른 $ZrO_2$와 Ti-6Al-4V의 접합 특성 (Brazing characteristics of $ZrO_2$ and Ti-6Al-4V brazed joints with increasing temperature)

  • 기세호;박상윤;허영구;정재필;김원중
    • 대한치과보철학회지
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    • 제50권3호
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    • pp.169-175
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    • 2012
  • 연구 목적: 온도 변화에 따른 $ZrO_2$와 Ti-6Al-4V의 접합 특성에 대해 알아보기 위하여 새로운 브레이징 합금을 제조하고, 브레이징 온도가 접합 특성에 미치는 영향에 대하여 조사하고자 하였다. 연구 재료 및 방법: 본 연구에서 사용된 시편으로는 실험용 $ZrO_2$ 모재(ZirBlank-PS, Acucera, Inc., Gyeonggi-do, Korea)는 소결 전의 블록형태($65mm{\times}36mm{\times}12mm(t)$)이며, 이를 잘라 사포(#2400)로 표면연마 후 소결하였다. 소결된 $ZrO_2$ 시편의 크기는 $3mm{\times}3mm{\times}3mm(t)$이다. Ti-6Al-4V 모재(Ti 6Al 4V ELI CG Bar, TMS, Washington, USA)는 직경 $10mm{\times}5mm(t)$를 사용하였다. 소결된 $ZrO_2$와 Ti-6Al-4V의 접합을 위하여 브레이징 합금을 제조하였다. 시편을 3군으로 나누어 A군은 $700^{\circ}C$에서, B군은 $750^{\circ}C$에서, C군은 $800^{\circ}C$에서 각각 브레이징 하였다. 브레이징 부의 두께와 결함율의 측정은 각 군당 하나의 시편으로 각 시편 당 5회씩 반복 측정하여 평균값을 취하였다. 결과: 브레이징 합금을 사용하여 진공 브레이징을 수행한 결과 $ZrO_2$ 와 Ti-6Al-4V 는 $700^{\circ}C-800^{\circ}C$에서 양호한 접합을 보였다. 브레이징 후 브레이징 온도 변화에 따른 브레이징 부의 두께 및 결함율의 변화는 SEM을 사용하여 측정하였다. 브레이징 온도가 $700^{\circ}C$에서 $800^{\circ}C$로 증가함에 따라 CuTi 금속간 화합물 층 및 Ti-Sn-Cu-Ag계 화합물 층의 두께는 각각 $4.5{\mu}m$에서 $10.3{\mu}m$로, $3.1{\mu}m$에서 $5.0{\mu}m$로 증가되었다. 또한 브레이징 온도가 $700^{\circ}C$에서 $800^{\circ}C$로 증가함에 따라 브레이징 접합계면의 결함율은 $ZrO_2$ 및 Ti-6Al-4V 계면에서 각각 25%에서 16.3%, 5%에서 1.5%로 감소되었다. 결론: 브레이징 온도가 $700^{\circ}C$에서 $800^{\circ}C$로 증가됨에 따라, 브레이징 접합계면의 결함율은 $ZrO_2$ 및 Ti-6Al-4V 계면에서 모두 감소되었다. 이는 결함부에서 $ZrO_2$와 활성원소인 Ti과의 반응이 충분히 일어나지 않아서 브레이징 합금이 $ZrO_2$에 웨팅되지 않은 것이 원인이라고 사료된다.