• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.230-234
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• 2009

It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

• Bulletin of the Korean Chemical Society
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• 제22권12호
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• pp.1371-1374
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• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• Journal of Welding and Joining
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• 제13권3호
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• pp.106-115
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• 1995

To know the bonding phenomena of Ti/Cu brazed joint, a characteristic of microstructures in bonding interlayer of vacuum brazed pure Ti to Cu has been studied in the temperature range from 1088 to 1133K for various bonding times using Ag-28wt%Cu filler metal. Also intermediate phases formed in bonded interlayer and behavior of layer growth have been investigated. The obtained results in this study are as follows: 1) Liquid insert metal width at the each brazing temperature was proportional to the square root of brazing time, and it was considered that the liquid insert metal width was controlled by the diffusion rate process of primary .alpha.-Cu formed at the Ti side. 2) Intermediate phases formed near the Ti interface were .betha.-Ti and intermetallic compounds TiCu, Ti$_{2}$Cu, Ti$_{3}$Cu, and TiCu. 3) .betha.-Ti formed in Ti base metal durig brazing transformed to lamellar structure, .alpha.-Ti + Ti$_{2}$Cu. The structure came from the eutectoil decomposition reaction in cooling. And the width of .betha.-Ti layer was proportional to the square root of brazing time, and it was considered that the growth of .betha.-Ti layer was controlled by interdiffusion rate process in .betha.-Ti. 4) The layer growth of TiCu, Ti$_{3}$Cu$_{4}$ and TiCu, phases formed near the Ti interface was linerface was linearly proportional to the brazing time, and it was considered that the layer growth of these phases was controlled by the chemical reaction rate at the interface.

• Journal of Welding and Joining
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• 제13권3호
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• 한국산학기술학회논문지
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• 제1권1호
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• pp.27-32
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• 2000

인산염계 Ag₂OㆍLi₂OㆍCaOㆍTiO₂ㆍP₂O/sub 5/ 조성에 CuO를 0.05∼l.5 mole 첨가하여 다공성 글래스 세라믹스를 제조하였으며. 제조된 모유리는 최적 핵형성을 위해 610℃. 최고 결정성장을 위해 840℃에서 열처리하였다. 1N-HC1에서 β-Ca₃(PO₄)결정상만을 선택적으로 용출하였으며 LiTi₂(PO₄)₃상과 AgTi₂(PO₄)₃결정상이 존재하는 Glass Ceramics를 제조하였다. 다공성 글래스 세라믹스의 항균효과 및 특성을 평가하였다. Staphylococcus aureus와 Salmonella typhi 균이 본 연구에 사용되었으며, 탁월한 항균효과를 나타내는 것으로 평가되었다.

• 마이크로전자및패키징학회지
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• 제11권1호
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• pp.1-6
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• 2004

자동차 전장품의 시험환경 조건이 엄격해짐에 따라, 전장품 개발 기술자들은 이에 부합하는 성능, 신뢰성, 비용 등을 고려한 보다 효과적인 제품 설계를 위해 노력하고 있다. 본 논문에서는 ECM 알루미나 기판의 플라즈마 세척 영향과 리플로우 후 Sn-37wt%Pb 솔더와 패드 접합부 계면에서 형성되는 금속간 화합물을 관찰하였다. 기판의 플라즈마 세척은 계면 접착력을 저해하였던 C에 의한 유기 잔류물 층이 제거되어 계면 접착력을 향상시키는 효과가 있다. 또한 AFM 분석 결과 도체 패드의 표면 거칠기는 304 nm에서 330 m로 증가하였다. 리플로우 과정에서 솔더와 TiWN/Cu 패드 계면에서 형성된 $Cu_6/Sn_5$는 리플로우 횟수가 증가할 수록 결정립의 크기도 조대화되었다. 솔더와 Ag-Pd 도체패드 계면에서는 세포질 형태의 $Ag_3Sn$화합물이 관찰되었다. $Ag_3Sn$은 지름이 약 0.1∼0.6 $\mu\textrm{m}$이며, 솔더 내부에서는 침상 모양도 관찰되었다.

• 한국산학기술학회논문지
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• 제16권12호
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• pp.8679-8683
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• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• 대한화학회지
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• 제23권3호
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• pp.180-185
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• 1979

각종 陰極, 卽 Ti, Zr, Ni, Pt, Cu, Ag, Au, Zn, Hg, Pb 및 흑연의 사용으로 2-butyne-1, 4-diol (BID)로부터 2-butene-1,4-diol (BED)까지의 電氣化學的 還元擧動에 관하여 연구하였다. IB族 金屬을 陰極으로 사용한 陰極分極曲線은 알칼리용액중에서 BID에 對해 한개의 還元波가 생기나 BED의 경우는 지지전해질내에서와 마찬가지로 還元波가 생기지 않았다. 고로 BID환원반응에 가장 적당한 陰極은 Cu, Ag, Au임을 알았다. 알칼리性 BID용액에서 銀電極을 사용한 電位走査法에서 peak電流는 電位走査速度의 제곱근과 BID농도에 比例하였다. 限界電流의 對數와 絶對溫度의 逆數의 관계로부터 구한 BID의 活性化에너지는 3.75kcal/mole였다. 고로 알칼리용액중 銀電極을 사용한 BID의 還元電流는 自己擴散에 의한 擴散電流임을 알았다.