• 식물병연구
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• 제17권3호
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• pp.405-409
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• 2011

연 재배연못에서 발견된 큰물개구리밥에 R. solani AHL1에 의해 국지적으로 말라 고사하는 것을 관찰하였다. 병원균을 분리하여 형태적 특징을 조사한 결과 균사는 두께가 $5-6{\mu}m$이고 둔각분지를 하고 있었으며 핵형은 다핵형이었다. 배양적 특성으로 균사생육은 $25^{\circ}C$에서 가장 왕성하였으며 $30^{\circ}C$에서 가장 많은 균핵이 형성되었다. 온도에 따른 병원성과 발병정도를 조사한 결과 $20^{\circ}C$, $25^{\circ}C$와 $30^{\circ}C$에서 모두 병원성이 나타났으며 발병정도는 $30^{\circ}C$에서 가장 높게 나타났다. 병원균을 유전자 수준에서 동정하기 위해 ITS 영역을 Neighbor-Joining 방법을 이용하여 계통분류분석을 수행한 결과 R. solani로 동정되었다. 본 연구에서 분리된 R. solani AHL1은 벼잎집무늬마름병을 유발하는 병원균과 유사하여 벼에 대한 병 발생 여부는 추가적으로 연구가 필요하다. 현재 농업은 화학비료의 사용을 억제하는 추세로 녹비를 이용한 유기농업으로, 주요 녹비인 Azolla 안정적인 사용을 위하여 Azolla에 발생하는 병에 대한 연구가 더 이루어져야 된다고 사료된다.

• 보존과학회지
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• 제30권1호
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• pp.95-101
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• 2014

은제품은 대기의 아황산가스나 황화수소 등과 반응하여 검게 변색된다. 검은 변색은 표면에 황화은이 형성되는 것으로 보존처리시 제거하는 것이 일반적이다. 황화은을 제거하는 방법은 화학적, 전기화학적, 미세마모법 등을 사용하지만 모두 은의 손실을 초래한다. 따라서 본 연구는 표면 오염물만을 선택적으로 제거할 수 있는 레이저클리닝을 은시편에 실험하여 안전하고 효율적인 레이저 조건을 알아보고자 하였다. 먼저 부식되지 않은 순수한 은에 레이저를 조사하여 안전한 레이저에너지밀도 범위를 확인하였다. 실험 결과 은은 1064nm $4.00J/cm^2$ 이하, 532nm $2.39J/cm^2$ 이하 레이저에너지밀도 범위에서 안전하였다. 인공적으로 부식시킨 은판의 부식층(황화은)은 레이저조건 1064nm $2.39J/cm^2$로 약 5~10회, 532nm $1.19J/cm^2$로 5~10회 조사하였을 때 제거되었다. AES를 이용하여 레이저 펄스당 제거되는 부식층 두께를 확인한 결과 약 13 ~ 25nm이다. 은 시편의 레이저클리닝 조건을 은제품에 적용한 결과 표면의 검은 부식층이 제거되었으며 은 광택도 유지되었다. 이를 통해 은제품의 레이저클리닝 적용 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• 자원환경지질
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• 제46권2호
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• pp.153-163
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• 2013

옥천 금-은광상은 시대미상의 변성퇴적암류내에 발달된 NE 또는 NW 계열의 열극대를 충진한 2개조의 석영맥으로 구성된 열수맥상광상이다. 본 광상의 석영맥은 주로 괴상으로 산출되며 일부 각력상 및 정동구조가 관찰되고 연장성은 최소 50 m, 맥폭은 0.1에서 0.3 m 정도이다. 이들 석영맥에서 산출되는 광물은 황철석, 석영, 견운모, 녹니석 및 점토광물로 구성된 열수변질광물과 황철석, 자류철석, 유비철석, 섬아연석, 황동석 및 방연석으로 구성된 황화광물이 관찰된다. 유체포유물 자료에 의하면, 광화시기 광석광물의 침전과 관련된 균일화온도와 염농도는 각각 $184{\sim}362^{\circ}C$, 0.0~6.6 wt.% NaCl 로서 광화유체가 천수의 혼입에 의한 냉각과 희석작용이 있었음을 지시한다. 황(${\delta}^{34}S$: 0.4~8.4‰)의 기원은 주로 화성기원과 일부 모암내의 황에서 유래된 것으로 해석된다. 산소(${\delta}^{18}O$: 4.9~12.1‰)와 수소(${\delta}D$: -92~74‰) 동위원소값의 자료로 볼 때, 이 광상의 광화유체는 마그마 기원 또는 천수 기원의 유체로 생각되며 광화작용이 진행됨에 따라 기원이 다른 천수의 혼입이 작용한 것으로 해석할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.151-151
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• 2013

무기물 기반, Si-based 태양전지에 비해 가볍고 저렴하다는 관점에서 유기태양전지에 대한 연구가 진행되고 있다. 유기태양전지는 Si-based 태양전지에 비해 그 효율이 낮다는 점이 문제로 제기되어 왔지만, 억셉터와 도너의 nanocomposite 구조인 bulk-heterojunction (BHJ) 구조가 개발이 되면서 유기물의 짧은 엑시톤(exciton) 거리를 극복할 수 있게 되어 그 효율이 비약적으로 증가되는 결과를 낳았다. 또한 넓은 범위의 파장을 흡수 할 수 있는 작은 band-gap을 갖는 물질이 개발됨으로써 유기 태양전지의 효율은 점차 증가하고 있다. 최근에는 독일 회사인 Heliatek에서 12%가 넘는 유기태양전지를 발표함으로써 유기태양전지가 Si-based 태양전지를 대체할 수 있는 차세대 에너지 공급원으로의 가능성을 충분히 보였다. 이런 유기 태양전지는 하부 투명전극인 인듐주석산화물(ITO)/정공이동층(PEDOT:PSS)/광흡수층/전자이동층(LiF)/낮은 일함수를 갖는 상부전극인 Al 구조의 일반적인 구조; ITO/전자이동층/광흡수층/정공이동층/높은 일함수를 갖는 상부전극(Ag), 전하의 이동방향이 반대인 역구조 태양전지, 두 가지로 분류할 수 있다. 하지만 소자 안정성의 관점에서 일반적인 구조의 태양전지는 ITO/PEDOT:PSS 계면에서의 화학적 불안정성과, 낮을 일함수를 갖는 상부전극이 쉽게 산화되는 등의 문제가 있어 상부전극으로 높은 일함수를 갖는 전극을 사용하는 역구조 태양전지가 더 유리하다. 이러한 역구조 태양전지에서 효율을 높일 수 있는 요인 중 하나는 전자이동층에 있다. 광흡수층에서 형성되어 분리된 전자가 전극으로 이동하기위해서는 전자이동층을 거쳐야 한다. 하지만 이 전자이동층 내에서의 전자 이동속도가 느리다면, 즉 저항이 크다면 광흡수증과의 계면에서 Back electron trasnfer현상으로 재결합이 일어나게 되어 전극으로 도달하는 전자의 양이 줄어들게 되고, 이는 유기태양전지 효율을 낮추는 요인이 된다. 전자이동층 자체의 저항뿐만 아니라, 전자이동층의 표면 거칠기(morphology) 또한 유기 태양전지의 효율을 좌우하는 요인 중 하나이다. 광흡수층과 전자이동층의 계면에서 전자의 이동이 일어나는데, 전자이동층의 표면 거칠기가 크게되면 그 위에 박막으로 형성되는 광흡수층과의 계면저항이 증가하게 되고, 이는 광흡수층에서 전자이동층으로의 원활한 전자이동을 저해함으로써 소자 효율의 감소를 일으키게 된다. 따라서 우리는 전자이동층인 ZnO 박막의 스퍼터링 조건을 변화시킴으로써 ZnO 층의 두께에 따른 광투과도, 전기전도성 변화 및 유기태양전지의 효율변화와, 표면 거칠기에 따른 광변환 효율 변화를 관찰하고자 한다.

• Computers and Concrete
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• 제33권5호
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• pp.497-507
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• 2024

In squat reinforced concrete walls, the displacement capacity for lateral deformation is low and the ability to resist the axial load can quickly be lost, generating collapse. This work consists of testing two squat reinforced concrete walls. One of the specimens is built with conventional detailing of reinforced concrete walls, while the second specimen is built applying an alternative design, including stirrups along the diagonal of the wall to improve its ductility. This solution differs from the detailing of beams or coupling elements that suggest building elements equivalent to columns located diagonally in the element. The dimensions of both specimens correspond to a wall with a low aspect ratio (1:1), where the height and length of the specimen are 1.4 m, with a thickness of 120 mm. The alternative wall included stirrups placed diagonally covering approximately 25% of the diagonal strut of the wall with alternative detailing. The walls were tested under a constant axial load of 0.1f'cAg and a cyclic lateral displacement was applied in the upper part of the wall. The results indicate that the lateral strength is almost identical between both specimens. On the other hand, the lateral displacement capacity increased by 25% with the alternative detailing, but it was also able to maintain the 3 complete hysteretic cycles up to a drift of 2.5%, reaching longitudinal reinforcement fracture, while the base specimen only reached the first cycle of 2% with rapid degradation due to failure of the diagonal compression strut. The alternative design also allows 46% more energy dissipation than the conventional design. A model was used to capture the global response, correctly representing the observed behavior. A parametric study with the model, varying the reinforcement amount and aspect ratio, was performed, indicating that the effectiveness of the alternative detailing can double de drift capacity for the case with a low aspect ratio (1.1) and a large longitudinal steel amount (1% in the web, 5% in the boundary), which decreases with lower amounts of longitudinal reinforcement and with the increment of aspect ratio, indicating that the alternative detailing approach is reasonable for walls with an aspect ratio up to 2, especially if the amount of longitudinal reinforcement is high.

• E2M - 전기 전자와 첨단 소재
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• 제12권7호
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).