• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.925-928
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• 2011

Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.

• Korean Journal of Materials Research
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• v.33 no.12
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• pp.537-549
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• 2023

The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO₂/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO₂/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.550-550
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• 2007

Inkjet printed silver films were fabricated using nano particles with the size of ~ 20 nm. We can obtain very good conducting silver films with the resistivity of $7.3\;{\mu}{\Omega}{\cdot}cm$ even though they were sintered at the very low temperature of $200^{\circ}C$. The electrical and mechanical properties of inkjet printed silver lines were measured with the sintering time and analyzed with the micro-structural development. The measured resistivity of inkjet printed Ag films were $57.4\;{\sim}\;7.3\;{\mu}{\Omega}{\cdot}cm$. And their hardness and Young's modulus were 0.98 ~ 1.72 GPa and 32 ~ 71 GPa, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.702-706
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• 2014

A comparative study has been attempted for microwave and conventional sintering of lead-free $Bi_{0.5}Na_{0.5}TiO_3(BNT)$-based multilayer ceramic actuators(MLAs). It was found that microwave sintering (MWS) could be successfully applied to the co-firing of piezoceramic/AgPd MLAs with a 10 times shorter firing cycle as well as $100^{\circ}C$ lower firing temperature ($850^{\circ}C$) for sufficient densification than conventional furnace sintering ($950^{\circ}C$). Furthermore, MWS-derived specimens showed better electric field-induced strain than that of CFS-derived specimens by effectively suppressing interdiffusions between ceramic and electrode layers.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.31-31
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1594-1597
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver powders as a bonding material. The effects of powder size on the field emission properties for the CNT cathode were investigated The better emission properties of CNT cathodes using smaller particles are due to a low sintering temperature of the bonding materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.26-30
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• 1990

Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films were screen printed on magnesia(MgO), silver and yttrium stabilized zirconia (YSZ) substrates and were sintered in a boat with cover to prevent the evaporation. The high-Tc phase increase and the low-Tc phase and Ca$_2$PbO$_4$ decrease with an increase in sintering temperature from 835$^{\circ}C$ to 860$^{\circ}C$. YSZ substrate interact strongly with the oxide resulting in poor superconductor, while the Ag and MgO substrates were satisfactory to make screen printed superconductors. The Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films screen printed both on Ag and MgO substrates show high Tc phase of ~85% and Tc of 96K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.89-89
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• 2009

In this study, the structural characteristics and the electrical properties of $Ag(Ta,Nb)O_3$ ceramics were investigated. Compound ceramics were fabricated by the mixed oxide method. The sintering temperature was 1200 $^{\circ}C$. The dielectric properties of $Ag(Ta,Nb)O_3$ ceramics were measured from 1 kHZ to 1 MHz. The electrical properties of $Ag(Ta,Nb)O_3$ ceramics were investigated at the various temperature ranges.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.583-589
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• 1999

In the fabrication of ceramic chip couples for high frequency application such as the mobile communication equipment the formation of electrode lines and Ag diffusion were investigated with heat treatment conditions for removing organic binders. The deformation and densification of the electrode line greatly depended on the binder burnout process due to the overlapped temperature zone near 400$^{\circ}C$ of the binder dissociation and the solid phase sintering of the silver electrode. Ag ions were diffused into the glass ceramic substrate. The Ag diffusion was led by the glassy phase containing Pb ions rather than by the crystalline phase containing Ca ions. The fact suggests that the Ag diffusion could be controlled by managing the composition of the glass ceramic substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.