• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.597-600
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• 2003

Bi-2223/Ag HTS wires have been fabricated by the PIT(powder in tube)process. Intermediate annealing was carried out to increase the homogenization and uniformity of the superconducting filaments embedded in the silver matrix during the deformation process that is important to sustain the engineering critical current density in long superconducting wire. Intermediate annealing act to release the deformation hardening of the superconducting wires during drawing process. Rolling parameters were investigated to roll the superconducting tapes with uniform thickness, width and winding tensions. Critical current of 60 m long superconducting tapes was measured 54.3 A continuously after final sintering heat treatment. The phase analysis of Bi-2223/Ag superconducting tapes are examined by the XRD.

• Proceedings of the KIEE Conference
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• 1998.07a
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• pp.349-352
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• 1998

In future superconducting electrical machines and device. AC loss in the superconducting windings are one of the most impotent design paramenters. This paper descriptions a series of Characteristic of a high-Tc superconducting Bi-Pb-Sr-Ca-Cu-O Ag-sheathed filament. In the case simulation and design to reduce ac loss is considered the filament number, twitch pith number and diameter of filament. A filament sample with Tc of 78K is made by $835^{\circ}C$ sintering for 50h and $0.33^{\circ}C$/min heating rate in an atmosphere. The experiment observations are compared with self-field loss and AC losses of Bi-Pb-Sr-Ca-Cu-O filament at 77K in following environments ; (i)AC external parallel magnetic field in different frequencies. And an analytical expression of the loss the derivation of transposition from an optimum condition was derived for the external AC magnetic field, theoretical predictions were found to coincide with the experimental observations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.858-862
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• 2013

The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.357-362
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• 1999

ZnO varistors containing cobalt, praseodymium and calcium oxides were prepared. The current-voltage charcteristics and microstructures of the specimens were investigated with respect to calcium addition and sintering temperature. The potential barrier heights and the carrier densities were estimated from C-V relations. The compatibility of Ag-Pd as an internal electrode for multilayer chip varistor was also examined.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.783-787
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• 2004

Microwave dielectric properties and the microstructure of $Ba_5Nb_4O_{15}$ ceramics with $PbO-B_2O_3-SiO_2$ glass frit were investigated to reduce the sintering temperature of $Ba_5Nb_4O_{15}$ ceramics as a function of the amount of glass frit from $0.5wt\%$ to $10wt\%$ and the sintering condition. The sintered density and the microwave dielectric properties of $Ba_5Nb_4O_{15}$ ceramics were remarkably changed with the amount of glass fit which existed as a liquid phase and assisted the densification. $Ba_5Nb_4O_{15}$ with $3wt\%$ $PbO-B_2O_3-SiO_2$ glass frit sintered at $900^{\circ}C$ for 2 h showed dielectric constant (K) of 41.4, a quality factor (Q $\times$f) of 13,485 GHz, and a Temperature Coefficient of resonant Frequency (TCF) of 9 ppm/$^{\circ}C$. Due to no trace of physical and chemical reaction between this composition and Ag electrode cofired at $900^{\circ}C$ for 2 h, this ceramics can be a good candidate for the multilayer dielectric filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.22-22
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• 2009

The silver thick film has been used in many industries such as display, chip, solar cell, automobile, and decoration with conventional heating. The silver thick film is fired with optimal time and temperature. However, decreasing the fabrication time is required due to high production power. Furthermore, there is a problem that silver in electrode is diffused throughout any substrates. For inhibiting the Ag diffusion and long fabrication time we considered a microwave heating. We investigated firing of silver thick film with conventional and microwave heating. The temperature of substrate was measured by thermal paper and the temperature of substrate was under $100\;^{\circ}C$ The shrinkage of electrode was measured with optical microscopy and optical profilometry. The shrinkage of electrode heat treated with microwave for 5min was similar to the that fired by the conventional heating for several hours. After firing by two types of heating, the diffusion of silver was determined using a optical microscope. The microstructure of sintered silver thick film was observed by SEM. Based on our results, the microwave heating should be a candidate heating source for the fabrication electronic devices in terms of saving the tact time and preventing the contamination of substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.172-173
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• 2008

In this study, $0.95(K_{0.5}Na_{0.5})NbO_3$-0.05Li$(Sb_{0.8}Nb_{0.2})O_3$ + $Ag_2O$ + x wt% $MnO_2$ were investigated as a function of the amount of $MnO_2$ addition in order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics. With increasing the amount of $MnO_2$ addition, density and electromechanical coupling factor $(k_p)$ increased up to 0.3wt.% $MnO_2$ and decreased above 0.3wt.% $MnO_2$. At the sintering temperature of 1020 $^{\circ}C$, Electromechanical coupling factor $(k_p)$, density, dielectric constant $({\varepsilon}r)$ and mechanical quality factor $(Q_m)$ of composition ceramics with 0.4wt% $Ag_2O$ addition showed the optimal value of 0.431, 4.33 g/$cm^3$, 820 and 119, respectively.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.78-81
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• 2013

$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.