• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1325-1326
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated is related to the composition of the hosting material. Silver saturated Ge-Ch glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. This paper concerns our more recent work on silver-doped germanium selenide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.189-190
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• 2007

본 논문에서는 칼코게나이드 박막의 Ag 포토 도핑시 기판의 변화에 따른 Ag 이온의 도핑 특성을 예측하고자 하였다. 도핑 특성은 Ag 이온의 도핑으로 인한 굴절률 변화를 이용하여 진폭혈 회절격자 효율을 측정하여 확인하였다. 시료는 5N의 순도를 갖는 Ge, Se, Ag 물질을 준비하였고, 이중 GeSe를 조성의 비에 맞추어서 석영관에 진공 봉입후 용융 혼합하고 급냉하여 비정질 빌크를 제작한다. 만들어진 비정질 벌크와 Ag를 열 증착법을 이용하여 기판에 올리는 방법으로 샘플을 제작한다. 제작된 샘플에 레이저와 몇몇 광학 소자로 구성된 흩로-리소그라피 장치를 이용하여 격자구조로 442nm 의 빛을 조사 시킨다. 결론으로는 기판은 칼코게나이드 박막에의 Ag 도핑에 영향을 미친다는 것을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.535-538
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• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1239-1240
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• 2006

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductors. The electromagnetic properties of $Ag_2O$ doped and undoped BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers to the magnetic effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the $Ag_2O$ doped sample than that in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that Ag acts to increase pinning centers of magnetic flux, contributing to the occurrence of the electromagnetic properties.

• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.102-105
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• 2007

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductors. The electromagnetic properties of the $Ag_2O$ doped and undoped BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers to the magnetic effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the $Ag_2O$ doped sample than that in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that Ag acts to increase the pinning centers of the magnetic flux, contributing to the occurrence of the electromagnetic properties.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.53-53
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.248-248
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• 2010

We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.113-115
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• 1994

We considered the ion and photo-induced properties as a function of wavelength by exposing the light over the band gap of a-Ag/a-$Se_{75}$$Ge_{25}$ and the low-energy defocused $Ga^{+}$ ion beam on Ag/a-$Se_{75}$$Ge_{25}$ thin film. This film acts as a negative resist for photo or ion beam lithography. We observed that the absorbance coefficient decreased with increasing the photo-exposing time and exposing the ion beam. The bandgap shifts toward longer wavelength called a "darkening effect" are observed in the films exposed to both photons and ions. We suggest that a primary step in the Ag layer and a secondary step is in a-$Se_{75}$$Ge_{25}$ film layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.