• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.69-74
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• 2017

Effect of post-annealing treatment times at $200^{\circ}C$ on the peel strength of screen-printed Ag film/polyimide substrate were systematically investigated by $180^{\circ}$ peel test for thermal reliability assessment of printed interconnect. Initial peel strength around 16.7 gf/mm increased up to 29.4 gf/mm after annealing for 24hours, and then sharply decreased to 22.3, 3.6, 0.6, and 0.1 gf/mm after 48, 100, 250, and 500 hours, respectively. Ag-O-C chemical bonding as well as binder organic bridges formations seemed to be responsible for interfacial adhesion improvement after the initial annealing treatment, while excessive Cu oxide formation at Cu/Ag interface seems to be closely related to sharp decrease in peel strength for longer annealing times.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.201-203
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• 2016

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10⁻⁵ Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10⁻⁵ Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.371-372
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• 2012

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.127-134
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• 2011

We investigate the crystallographic orientation and strain states of the Ni/Ag ohmic contacts on p-type GaN. The Ag film in the Ni/Ag contact was severely agglomerated during high temperature annealing in air ambient. As a results, after annealing for 24 h, the Ni/Ag contact shows non-linear I-V curve and low light reflectance of ~21% at 460 nm wavelength. High-resolution X-ray diffraction results show that the interplanar spacing of Ag (111) planes is almost same to that of bilk Ag after annealing for 24 hrs, indicating that the in-plane tensile strain in the Ag film was fully relaxed due to the Ag agglomeration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.527-530
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• 2002

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.3-6
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• 2002

Effect of Ag additive element on microstructure of $Fe_{87-x}Zr_7B_6Ag_x$, magnetic thin films on Si(001) substrates has been investigated using Transmission Electron Microscopy(TEM) and X-ray Diffraction(XRD). All samples with additive Ag element were made by DC-sputtering and subjected to annealing treatments of $300^{\circ}C{\siim}600^{\circ}C$ for 1 hr. TEM and XRD showed that perfectly amorphous state in Ag-free Fe-based films was observed in as-deposited condition. The as-deposited Fe-based films with the presence of Ag constituent have a mixture of Fe-based amorphous and nano-sized Ag crystalline phases. In this case, additive element, Ag was soluted into Fe-based matrix. With the increase in additive element, Ag, insoluble nano-crystalline Ag particles were dispersed in the Fe-based amorphous matrix. Crystallization of Fe-based amorphous phase in the matrix of $Fe_{82}Zr_7B_6Ag_5$ thin films occurred at an annealing temperature of $400^{\circ}C$. Upon annealing, the amorphous-Ag crystalline state of Fe-Zr-B-Ag films was transformed into the mixture of Ag crystalline phase + Fe-based amorphous phase + ${\alpha}$-Fe cluster followed by the crystallization process of ${\alpha}$-Fe nanocrystalline + Ag crystalline phases.

• Progress in Superconductivity
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• v.5 no.2
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• pp.124-127
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• 2004

Many of research efforts have been focused on the improvement of critical current density (Jc) of silver-sheathed Bi-2223 tapes far practical applications. In this study, the transformation of Bi-2212 phase was investigated, which was transformed to orthorhombic from tetragonal through pre-annealing during powder packing and drawing process. The relationship between hardness of Bi-2212 orthorhombic phase and workability of Bi-2223/Ag tape was investigated. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking and drawing process with different heat-treatment histories. Before rolling process, round wires were pre-annealing at 76$0^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform to Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However the breakages were created at Ag-alloy clad during rolling for pre-annealed Bi-22231Ag tapes. Several pre-annealing scenarios were introduced to reduce the breakages during rolling process. Microstructure and critical current density of pre-annealed Bi-2223 superconducting tapes were investigated. We could achieve proper pre-annealing conditions for Ag-alloy clad Bi-2223 superconducting tapes.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.189-193
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• 1996

Magnetoresistance field sensitivity and magnetostriction were measured as a function of annealing temperature for NiFe/Ag multilayer systems displaying giant magnetoresistance. Key multilayer configurations such as number of NiFe/Ag bilayers and Ag spacer thickness were varied. A high giant magnetoresistance ratio up to 5% with zero magnetostriction and high magnetoresistance field sensitivity was possible to achieve simultaneously with optimal sample geometry and annealing condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.319-321
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• 2004

We report on progress in developing high-power excimer lasers as well as UV-optics for creating low-temperature poly silicon (LTPS). A new high-power excimer laser offers 315 Watts with high pulse to pulse energy stability. Larger substrates can now be processed in better quality with either the SLS process or the new optics for line beam excimer laser annealing.