• Title/Summary/Keyword: Ag activation

Search Result 170, Processing Time 0.024 seconds

Electromigration Behavior of the Flip-Chip Bonded Sn-3.5Ag-0.5Cu Solder Bumps (플립칩 본딩된 Sn-3.5Ag-0.5Cu 솔더범프의 electromigration 거동)

  • Choi Jae-Hoon;Jun Sung-Woo;Won Hae-Jin;Jung Boo-Yang;Oh Tae-Sung
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.11 no.4 s.33
    • /
    • pp.43-48
    • /
    • 2004
  • Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.

  • PDF

Electromigration charateristics of eutectic SnPb and SnAgCu thin stripe lines (공정조성의 SnPb 및 SnAgCu 선형 솔더의 electromigration 특성 평가)

  • Yoon Min-Seung;Lee Shin-bok;Joo Young-Chang
    • Proceedings of the International Microelectronics And Packaging Society Conference
    • /
    • 2003.11a
    • /
    • pp.63-67
    • /
    • 2003
  • Electromigration characteristics of $SnAg_3Cu_{0.7}$ and eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure of two solders were observed after electromigration test, in which the temperature and the current density were varied from 90 to $110^{\circ}C$ and from $4.0\times10^4\;A/cm^2\;to\;9.2\times10^4\;A/cm^2$. In SnAgCu solders, hillocks were main]y observed near the anode end. From resistance measurements, it was calculated that the activation energy of the SnAgCu solder for electromigration was 1.04 eV And in eutectic SnPb without the effect of pads, while depleted region was found near cathode end, Sn-rich hillocks were observed near the anode end. During eutectic SnPb electromigration, it were observed that electromigration behavior had two migration modes.

  • PDF

Adsorptive Removal of TBM and THT Using Ion-exchanged NaY Zeolites (이온교환된 NaY 제올라이트를 이용한 TBM와 THT의 흡착제거)

  • Jung, Gap-Soon;Lee, Seok-Hee;Cheon, Jae-Kee;Choe, Jae-Wook;Woo, Hee-Chul
    • Clean Technology
    • /
    • v.15 no.1
    • /
    • pp.60-66
    • /
    • 2009
  • Adsorptive removal of tetrahydrothiophene (THT) and tert-butylmercaptan (TBM) that were widely used sulfur odorants in pipeline natural gas was studied using various ion-exchanged NaY zeolites at ambient temperature and atmospheric pressure. In order to improve the adsorption ability, ion exchange was performed on NaY zeolites with alkali metal cations of $Li^+,\;Na^+,\;K^+$ and transition metal cations of $Cu^{2+},\;Ni^{2+},\;Co^{2+},\;Ag^+$. Among the adsorbents tested, Cu-NaY and Ag-NaY showed good adsorption capacities for THT and TBM. These good behaviors of removal of sulfur compound for Cu-NaY and Ag-NaY zeolites probably was influenced by their acidity. The adsorption capacity for THT and TBM on the best adsorbent Cu-NaY-0.5, which was ion exchanged with 0.5 M copper nitrate solution, was 1.85 and 0.78 mmol-S/g at breakthrough, respectively. It was the best sulfur capacity so far in removing organic sulfur compounds from fuel gas by adsorption on zeolites. While the desorption activation energy of TBM on the Cu-NaY-0.5 was higher than NaY zeolite, the difference of THT desorption activation energy between two zeolites was comparatively small.

Growth and Optoelectrical Properties for $AgGaSe_2$ Single Crystal Thin Films ($AgGaSe_2$ 단결정 박막 성장과 광전기적 특성)

  • Hong, Kwang-Joon;You, Sang-Ha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.11a
    • /
    • pp.171-174
    • /
    • 2004
  • The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

  • PDF

Joining of AIN Ceramics to Metals: Effect of Reactions and Microstructural Developments in the Bonded Interface on the Joint Strength (질화알루미늄과 금속간 계면접합에 관한 연구: 계면반응과 미세구조 형성이 접합체 강도에 미치는 영향)

  • 박성계
    • Journal of Powder Materials
    • /
    • v.4 no.3
    • /
    • pp.196-204
    • /
    • 1997
  • Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

  • PDF

Pd-based metallic membranes for hydrogen separation and production

  • Tosti, Silvano;Basile, Angelo
    • Proceedings of the Membrane Society of Korea Conference
    • /
    • 2003.07a
    • /
    • pp.25-28
    • /
    • 2003
  • Low cost composite metallic membranes for the hydrogen separation and production have been prepared by using thin Pd-Ag foils reinforced by metallic (stainless steel and nickel) structures. Especially, “supported membranes” have been obtained by a diffusion welding procedure in which Pd-Ag thin foils have been joined with perforated metals (nickel) and expanded metals (stainless steel): in these membranes the thin palladium foil assures both the high hydrogen permeability and the perm-selectivity while the metallic support provides the mechanical strength. A second studied method of producing "laminated membranes" consists of coating non-noble metal sheets with very thin palladium layers by diffusion welding and cold-rolling. Palladium thin coatings over these metals reduce the activation energy of the hydrogen adsorption process and make them permeable to the hydrogen. In this case, the dense non-noble metal has been used as a support structure of the thin Pd-Ag layers coated over its surfaces: a proper thickness of the metal assures the mechanical strength, the absence of defects (cracks, micro-holes) and the complete hydrogen selectivity of the membrane. membrane.

  • PDF

The Adsorption Energetics and Geometry of Ketene Physisorbed on Ag(111)$^*$

  • Kim, Jeong Su;Dae, Hye Ryeong
    • Bulletin of the Korean Chemical Society
    • /
    • v.16 no.2
    • /
    • pp.143-148
    • /
    • 1995
  • Ketene (CH2CO) adsorption on Ag(111) has been studied in ultrahigh vacuum using electron energy loss spectroscopy and temperature programmed desorption. Ketene adsorbs molecularly on Ag(111) at temperatures below 126 K. The coverage increases linearly with exposure until saturation. No multilayer formation and no shift in desorption temperature with coverage were observed, indicating a lack of attractive interaction between adsorbate molecules. The desorption activation energy is estimated to be 7.8 kcal/mol by assuming first order kinetics and a pre-exponential factor of 1013 sec-1. The adsorption geometry of ketene on the surface is determined from the relative intensities of the vibrational energy loss peaks. The CCO axis of CH2CO is found to be almost parallel to (∼4°away from) the surface and the molecular plane is almost perpendicular to the surface (∼3°tilt).

Hydroacylation of 1,5-Hexadiene through C-H Bond Activation (탄소-수소 결합 활성을 이용한 1,5-헥사디엔의 하이드로아실화반응 연구)

  • Jeon, Cheol Ho;Han, Jong Su;Kim, Seon Il
    • Journal of the Korean Chemical Society
    • /
    • v.38 no.11
    • /
    • pp.833-840
    • /
    • 1994
  • 8-Quinolinecarboxaldehyde (1) reacted with 1,5-hexadiene (2) in THF under Wilkinson's catalyst(3) and $AgBF_4(8)$ to give a mixture of 8-quinolinyl 5-hexenyl ketone (4) and 8-quinolinyl 5-hexen-2-yl ketone (9) at initial reaction stage. The reason for the formation of the branched alkenyl ketone 9 is supposed to be that the vacant coordination site, generated from Wilkinson's catalyst and $AgBF_4(8)$, makes it possible to form the 5.5 membered ring metallacycle intermediate. The higher the concentration of $AgBF_4(8)$ was used, the greater the ratio of 9 to 4 was observed. Longer reaction time and high temperature induced isomerization of 9 and 4 to 10 and 5. Especially the high reaction temperature increased the possibility of cyclization of the 5-hexenyl metal intermediate to give 8-quinolinyl cyclopentylmethyl ketone (11).

  • PDF

Anti-inflammatory Effect of Angelicae Gigantis Radix Water Extract on LPS-stimulated Mouse Macrophages (Lipopolysaccharide로 유발된 마우스 대식세포의 염증매개성 Cytokine 생성증가에 대한 참당귀 물추출물의 효능 연구)

  • Han, Hyo-Sang
    • The Korea Journal of Herbology
    • /
    • v.28 no.5
    • /
    • pp.113-119
    • /
    • 2013
  • Objectives : The purpose of this study was to investigate the effects of Angelicae Gigantis Radix Water Extract(AG) on the production of proinflammatory mediators in RAW 264.7 cells stimulated with lipopolysaccharide(LPS). Method : RAW 264.7 cells were cotreated with AG(50 and 100 ug/mL) and lipopolysaccharide(LPS; 1 ug/mL) for 24 hours. After 24 hour treatment, using Bead-based multiplex cytokine assay, concentrations of various cytokines such as interleukin(IL)-6, IL-$1{\beta}$, IL-10, tumor necrosis factor-alpha(TNF-${\alpha}$), granulocyte colony-stimulating factor(G-CSF), granulocyte macrophage colony-stimulating factor(GM-CSF), interferon inducible protein-10(IP-10), leukemia inhibitory factor(LIF), lipopolysaccharide-induced chemokine(LIX), monocyte chemoattractant protein-1(MCP-1), macrophage colony-stimulating factor(M-CSF), macrophage inflammatory protein(MIP)-$1{\alpha}$, MIP-$1{\beta}$, MIP-2, Regulated on Activation, Normal T cell Expressed and Secreted(RANTES) and vascular endothelial growth factor(VEGF) were measured. Result : AG significantly inhibited LPS-induced production of TNF-${\alpha}$, MIP-$1{\alpha}$, G-CSF, RANTES, IL-10, and M-CSF from LPS-stimulated RAW 264.7 cells at the concentrations of 50 and 100 ug/mL. AG significantly inhibited LPS-induced production of MIP-$1{\beta}$, MIP-2, GM-CSF, and IL-6 from LPS-stimulated RAW 264.7 cells at the concentrations of 50 ug/mL. AG significantly inhibited LPS-induced production of VEGF from LPS-stimulated RAW 264.7 cells at the concentrations of 100 ug/mL. But AG did not show any significant effect on the production of MCP-1, LIF, LIX, IP-10 and IL-$1{\beta}$ from LPS-induced RAW 264.7 cells. Conclusion : These results suggest that AG has anti-inflammatory effect related with its inhibition of proinflammatory mediators such as TNF-${\alpha}$, MIP-$1{\alpha}$, G-CSF, RANTES, IL-10, MIP-$1{\beta}$, MIP-2, GM-CSF, IL-6, VEGF and M-CSF in LPS-induced macrophages.

The Study of Si homoepitaxial growth on Si(111) Surface (Si(111)표면 위에서 Si의 동종층상성장에 관한 연구)

  • Kwak, Ho-Weon;moon, Byung-yeon
    • Journal of the Korean Society of Industry Convergence
    • /
    • v.7 no.4
    • /
    • pp.349-354
    • /
    • 2004
  • The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

  • PDF