• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.577-578
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• 2004

• Proceedings of the Korean Society of Plant Biotechnology Conference
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• 2003.10a
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• pp.136-136
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• 2003

• Proceedings of the Korean Society of Plant Biotechnology Conference
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• 2003.10a
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• pp.137-137
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• 2003

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.425-425
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• 2002

• Journal of Korea Foundry Society
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• v.22 no.2
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• pp.61-68
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• 2002

• Journal of the Korea Institute of Military Science and Technology
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• v.18 no.3
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• pp.293-299
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• 2015

We analyzed the damage effect on Glass Fibre Reinforced Plastics(GFRP) under air flow by irradiation of continuous wave near-IR laser. Damage process and temporal temperature distribution were demonstrated and material characteristics were observed with laser intensity, surface flow speed and angle. Surface temperature on GFRP rapidly increased with laser intensity, and the damaged pattern was different with flow characteristics. In case of no flow, penetration on GFRP by burning and flame generation after laser irradiation was appeared at once. GFRP was penetrated by the heat generated from resin ignition. In case of laser irradiation under flow, a flame generated after burning extinguished at once by flow and penetration pattern on GFRP were differently shown with flow angle. From the results, we presented the damage process and its mechanism.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.76-82
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• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.1
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• pp.82-89
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• 2014

The damage in germanium (Ge) optical window irradiated by a near-infrared continuous wave (CW) laser was studied. Laser-induced heating and melting process were surveyed, and the specific laser power and the irradiance time to melt were estimated by numerical simulation. The experiments were also carried out to investigate the macro and micro structure change on Ge window. Results showed that the surface deformation was formed by melting and resolidification process, the damaged surface had a polycrystalline phase, and the transmittance as an optical performance factor in mid-infrared region was decreased. We confirmed that an abnormal polycrystalline phase and surface deformation effect such as hillock formation and roughness increase reduced the transmittance of Ge window and were the damage mechanism of CW laser induced damage on Ge window.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.223-226
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• 2008

The comparison of sintering behavior and mechanical properties of ultra-fine WC-10wt.%Co and WC-10wt.%Fe hard materials produced by high-frequency induction heated sintering (HFIHS) was accomplished using ultra fine powder of WC and binders(Co, Fe). The advantage of this process allows very quick densification to near theoretical density and prohibition of grain growth in nano-structured materials. Highly dense WC-10Co and WC-10Fe with a relative density of up to 99% could be obtained with simultaneous application of 60 MPa pressure and induced current within 1 minute without significant change in grain size. The hardness and fracture toughness of the dense WC-10Co and WC-10Fe composites produced by HFIHS were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.594-596
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• 2009

Amorphous silicon nitride (a-SiNx) passivation film as a passivation layer of TFT-LCDs was deposited by AC-reactive sputtering at low temperature. As a result, the electrical characteristics and reliability of TFT with novel passivation showed the same level as the conventional TFT. Finally, we have developed 47"Full HD IPS TFT-LCDs with sputtered amorphous silicon nitride. It is suitable for low temperature based applications such as OTFT and Flexible display.