• The Korean Journal of Physiology and Pharmacology
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• v.5 no.2
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• pp.107-122
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• 2001

A function of the kidney is elimination of a variety of xenobiotics ingested and wasted endogenous compounds from the body. Organic anion and cation transport systems play important roles to protect the body from harmful substances. The renal proximal tubule is the primary site of carrier-mediated transport from blood into urine. During the last decade, molecular cloning has identified several families of multispecific organic anion and cation transporters, such as organic anion transporter (OAT), organic cation transporter (OCT), and organic anion-transporting polypeptide (oatp). Additional findings also suggested ATP-dependent organic ion transporters such as MDR1/P-glycoprotein and the multidrug resistance-associated protein (MRP) as efflux pump. The substrate specificity of these transporters is multispecific. These transporters also play an important role as drug transporters. Studies on their functional properties and localization provide information in renal handling of drugs. This review summarizes the latest knowledge on molecular properties and pharmacological significance of renal organic ion transporters.

• Journal of Powder Materials
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• v.18 no.6
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• pp.526-531
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• 2011

Fecralloy is the promising materials for high temperature exhaust filtering system due to the excellent its oxidation resistance property. In this research, Fecralloy nanoparticles coated Fecralloy thin foil was prepared by a single nozzle electrospray system in order to increase surface area of Fecralloy foil. Fecralloy nanoparticles were fabricated by electrical wire explosion method in ethanol using Fecralloy wires as a source material. Electrospray modes with applied D.C voltages to Fecralloy colloidal solution were investigated to make a stable cone-jet mode. Coated layers with and without additional heat treatment were observed by FE-SEM (field emission-scanning electron microscope) and tape test for evaluating their adhesion to substrate were performed as well.

• Microbiology and Biotechnology Letters
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• v.23 no.2
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• pp.150-155
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• 1995

Carboxypeptidase Z(CPZ) cDNA of Absidia zychae was experssed in Saccharomyces cerevisiae. The expressed CPZ(YCPZ) was secreted about 30 mg/l into the medium and has a little higher molecular weight than the wild type CPZ in SDS-PAGE. By the result of N-terminal amino acid sequencing, YCPZ has additional 15 amino acids residues in N-terminus of CPZ. But YCPZ shows no difference with CPZ in enzyme activity and substrate specificity. For the identification of processing mechanism of YCPZ, 36-Arg was changed to 36-Thr by site specific mutagenesis. Mutant YCPZ does not processed at 36-Thr. It was, therefore, concluded that the YCPZ was processed by KEX2. According to endo F treatment, high amount of carbohydrate was N-glycosylated in YCPZ.

• Transactions of Materials Processing
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• v.14 no.7 s.79
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• pp.624-627
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• 2005

In this paper, we investigated the possibility of replicating patterned media by nano-injection molding process with a metallic nano-stamper. The original nano-master was fabricated by I-beam lithography and ICP etching process. The metallic nano-stamper was fabricated using a nanoimprint lithography and nano-electroforming process. Finally, the nano-patterned substrate was replicated using a nano-injection molding process without additional etching process. The replicated patterns using nano-injection molding process were as small as 50nm in diameter, 150nm in pitch, and 50nm in depth.

• 한국정보디스플레이학회:학술대회논문집
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• 2001.08a
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• pp.9-12
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• 2001

With the explosive growth of Note-PC and Desktop monitor market, TFT LCD market confronted a entire supply shortage during 1999. Forecasting a more booming stage for the next several years, many TFT-LCD panel manufacturers continue to expand the capacity of their existing plants and also make an additional investment in building new plants. The new investment is concentrated on the $4^{th}$ generation TFT LCD line in order to improve investment efficiency. The set up of the Samsung's Gen 3.5 line progressed with satisfactorily performance using $600{\times}720mm$ glass size. We have continuously reviewed several issues regarding the glass size for our next Gen. 4 line, which leads to adopt $730{\times}920mm$. Due to the continuous enlargement of a substrate size and following difficulty in transferring cassettes, the next line is expected to be the last line that employs "cassette transfer". The layout of the next line will shift from conventional "concentration-type" to "separation-type" configuration for the purpose of reducing transfer distance as well as transfer time. The details will be discussed in this paper.

• Journal of Information Display
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• v.1 no.1
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• pp.20-24
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• 2000

We propose on a novel vertical configuration (VC) for a helix-deformed ferroelectric liquid crystal (HDFLC) display that has fast response, high contrast, analog gray scale capability, and wide-viewing characteristics. In contrast to a conventional HDFLC in a planar geometry, smectic layers arrange themselves parallel to the substrates, and thus, extremely uniform alignment of molecules in large area is naturally achieved in our new configuration without additional processes such as the rubbing and/or electric field treatment. Moreover, with a proper design of electrode patterns on the same substrate, multidomain switching is easily realized without employing any complex process of alignment. Our new VC-HDFLC is expected to provide a viable technology to produce a next-generation large area LCD suitable for processing the dynamic image at a video-rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.533-538
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• 2001

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.60-69
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• 1998

Polysilicon surface mdoification tecnique is developed to reduce the sticking of microstructures fabricated by micromachining. Modified anti-sticking grain holes are simply formed by two-step dry eth without additional photolithography nor deposition of thin films. Both process-induced sticking and in-use sticking are successfully reduced more than two times by adopting grain holed polysilicon substrate. A sticking model for cantilever beam is derived. This model includes bending moment stems from stress gradient along the thickness directionof structural polysilicon. Because the surface tension of rinse liquid and the surface energy of the solids to be stuk tend to decrease in recently developed anti-sticking techniques, the effect of stress gradient will play an important role to analyze the sticking phenomena. Effect of the temperature during post-release rinse and dry is modelled and verified experimentally. Based on developed anti-sticking polysilicon structure and the sticking model, sticking of microstructure, fabricated by simple wet process including sacrificial layer etch and rinse with deionized water without special equimpment for post-release rinse and dry was alleviated more than 3.5 times.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• Journal of information and communication convergence engineering
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• v.14 no.4
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• pp.268-271
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• 2016

An efficient inductive switching noise suppression technique for mixed-signal integrated circuits (ICs) using standard CMOS digital technology is proposed. The proposed design technique uses a parallel RC circuit, which provides a damping path for the switching noise. The proposed design technique is used for designing a mixed-signal circuit composed of a ring oscillator, a digital output buffer, and an analog noise sensor node for $0.13-{\mu}m$ CMOS digital IC technology. Simulation results show a 47% reduction in the on-chip inductive switching noise coupling from the noisy digital to the analog blocks in the same substrate without an additional propagation delay. The increased power consumption due to the damping resistor is only 67% of that of the conventional source damping technique. This design can be widely used for any kind of analog and high frequency digital mixed-signal circuits in CMOS technology