• Journal of Electrochemical Science and Technology
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• 제11권1호
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• pp.92-98
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• 2020

SnO₂-based high-capacity anode materials are attractive candidate for the next-generation high-performance lithium-ion batteries since the theoretical capacity of SnO₂ can be ideally extended from 781 to 1494 mAh g^-1. Here 3D etched Cu foam is applied as a current collector for electron path and simultaneously a substrate for the SnO₂ coating, for developing an integrated electrode structure. We fabricate the 3D etched Cu foam through an auto-catalytic electroless plating method, and then coat the SnO₂ onto the self-supporting substrate through a simple sol-gel method. The catalytic dissolution of Cu metal makes secondary pores of both several micrometers and several tens of micrometers at the surface of Cu foam strut, besides main channel-like interconnected pores. Especially, the additional surface pores on etched Cu foam are intended for penetrating the individual strut of Cu foam, and thereby increasing the surface area for SnO₂ coating by using even the internal of Cu foam. The increased areal capacity with high structural integrity upon cycling is demonstrated in the SnO₂-coated 3D etched Cu foam. This study not only prepares the etched Cu foam using the spontaneous chemical reactions but also demonstrates the potential for electroless plating method about surface modification on various metal substrates.

• 한국전자파학회논문지
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• 제23권1호
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• pp.21-28
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• 2012

본 논문에서는 가요성(flexible) 있는 영차 공진 안테나를 제안하였다. 안테나의 성능을 결정하는 본 논문의 위상 상수는 영차 공진일 때 기판의 변형에 독립적이다. Composite right/left-handed(CRLH) 전송 선로를 영차 공진 현상을 실현하기 위해 coplanar waveguide technology(CPW)를 기반으로 구현되었다. CRLH는 병렬 인덕턴스와 직렬 캐패시턴스를 추가함으로써 메타 물질로 구현된다. 추가적인 회로 변수를 만들기 위해 칩 인덕터와 갭 캐패시터가 각각 추가되었다. 제안된 ZOR 안테나는 대역폭 6.5 %와 최대 이득 0.69~1.39 dBi으로 좋은 성능을 보인다. 시뮬레이션과 측정 결과를 통해서 곡면의 지름이 서로 다른 각각 30, 50, 70 mm 뿐만 아니라 평면일 때 공진 주파수와 방사 패턴이 거의 변하지 않았음을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• Current Photovoltaic Research
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• 제3권3호
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• 한국자기학회지
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• 제7권4호
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• pp.205-211
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• 1997

E-Beam Evaporator로 제조된 CoCrTa/CrNi 자성박막에서 하지층인 Cr에 대한 소량첨가원소인 Ni이 자성박막의 자기적 성질에 어떤 영향을 미치는가를 조사하였다. 상온에서 제조된 시편에서 소량의 첨가원소 Ni의 영향은 보자력의 증가를 가져왔음을 알 수 있었다. 이러한 보자력 증가의 원인을 XRD와 AFM으로 그 결정배향성과 미세구조를 통하여 살펴보았다. Cr 하지층에 Ni의 첨가시 결정립의 크기가 증가함을 알 수 있었다. 280 .deg. C 기판온도에서는 CrNi 하지층을 갖는 박막이 오히려 낮은 보자력 값을 나타내었고 이것은 결정립 크기의 증가때문으로 생각된다. 높은 기판온도에서는 결정배향성보다 Cr의 편석이 보자력에 대한 주요한 기구인 것으로 생각된다.

• Journal of Microbiology and Biotechnology
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• 제26권2호
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• pp.315-325
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• 2016

A novel esterase gene, est7K, was isolated from a compost metagenomic library. The gene encoded a protein of 411 amino acids and the molecular mass of the Est7K was estimated to be 44,969 Da with no signal peptide. Est7K showed the highest identity of 57% to EstA3, which is an esterase from a drinking water metagenome, when compared with the enzymes with reported properties. Est7K had three motifs, SMTK, YSV, and WGG, which correspond to the typical motifs of family VIII esterases, SxxK, Yxx, and WGG, respectively. Est7K did not have the GxSxG motif in most lipolytic enzymes. Three additional motifs, LxxxPGxxW, PLGMxDTxF, and GGxG, were found to be conserved in family VIII enzymes. The results of the phylogenetic analysis and the alignment study suggest that family VIII enzymes could be classified into two subfamilies, VIII.1 and VIII.2. The purified Est7K was optimally active at 40ºC and pH 10.0. It was activated to exhibit a 2.1-fold higher activity by the presence of 30% methanol. It preferred short-length p-nitrophenyl esters, particularly p-nitrophenyl butyrate, and efficiently hydrolyzed glyceryl tributyrate. It did not hydrolyze β-lactamase substrates, tertiary alcohol esters, glyceryl trioleate, fish oil, and olive oil. Est7K preferred an S-enantiomer, such as (S)-methyl-3-hydroxy-2-methylpropionate, as the substrate. The tolerance to methanol and the substrate specificity may provide potential advantage in the use of the enzyme in pharmaceutical and other biotechnological processes.

• Journal of Microbiology and Biotechnology
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• 제27권2호
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• pp.297-305
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• 2017

The use of peroxidase in the nitration of phenols is gaining interest as compared with traditional chemical reactions. We investigated the kinetic characteristics of phenol nitration catalyzed by horseradish peroxidase (HRP) in an aqueous-organic biphasic system using n-butanol as the organic solvent and ${NO_2}^-$ and $H_2O_2$ as substrates. The reaction rate was mainly controlled by the reaction kinetics in the aqueous phase when appropriate agitation was used to enhance mass transfer in the biphasic system. The initial velocity of the reaction increased with increasing HRP concentration. Additionally, an increase in the substrate concentrations of phenol (0-2 mM in organic phase) or $H_2O_2$ (0-0.1 mM in aqueous phase) enhanced the nitration efficiency catalyzed by HRP. In contrast, high concentrations of organic solvent decreased the kinetic parameter $V_{max}/K_m$. No inhibition of enzyme activity was observed when the concentrations of phenol and $H_2O_2$ were at or below 10 mM and 0.1 mM, respectively. On the basis of the peroxidase catalytic mechanism, a double-substrate ping-pong kinetic model was established. The kinetic parameters were ${K_m}^{H_2O_2}=1.09mM$, ${K_m}^{PhOH}=9.45mM$, and $V_{max}=0.196mM/min$. The proposed model was well fit to the data obtained from additional independent experiments under the suggested optimal synthesis conditions. The kinetic model developed in this paper lays a foundation for further comprehensive study of enzymatic nitration kinetics.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.51-61
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• 1999

R.f. magnetron sputtering법에 의해 $SrBi_2Ta_2O_9$ 박막을 $Pt/SiO_2$/Si p-tyPp (100) 기판 위에 제조하였다. 제조된 박막을 $800^{\circ}C$에서 열처리한 후 증착 조건에 따라 미세구조와 전기적 특성을 측정하였다. $800^{\circ}C$에서 열처리된 박막은 (006), (111), (200) 및 이차상인 BiPt 피크가 XRD 분석 결과 나타났으며, 가스 압력의 감소와 기판 온도의 증가에 따라 결정입자는 성장하였다. 50mtorr, $100^{\circ}C$에서 증착 후 $800^{\circ}C$에서 열처리한 박막의 두께는 200nm이었다. 이 박막의 잔류분극과 항전계 값은 각각 20.07 $\mu$C/$\textrm {cm}^2$, 79kV/cm이었다.

• 한국전자파학회논문지
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• 제27권10호
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• pp.917-925
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• 2016

슈미트 트리거 로직(Schmitt Trigger Logic)은 디지털 회로의 노이즈에 대한 내성을 향상시키기 위해 히스테리시스 특성을 보이는 게이트를 제안한 설계 방법이다. 슈미트 트리거 특성을 보이는 설계 방법 중 최근에 제안된 substrate bias를 조정하여 구현하는 Dynamic Threshold voltage MOS(DTMOS) 방법을 사용할 경우, 게이트 수를 늘이지 않고 내성을 향상 시킬 수 있는 설계방법이나, 범용 CMOS 공정에서 구현하여 시뮬레이션으로 예상하는 성능을 얻을 수 있는지는 검증되지 않았다. 본 연구에서는 $0.18{\mu}m$ CMOS 공정에서 DTMOS 설계 방법을 구현하여 히스테리시스 특성을 측정하여 검증하였다. DTMOS 슈미트 트리거 버퍼, 인버터, 낸드, 노어 게이트 및 간단한 디지털 로직 회로를 제작하였으며, 히스테리시스 특성, 전력 소모, 딜레이 등의 특성들을 관찰하고, 일반적인 CMOS 게이트로 구현된 회로와 비교하였다. 노이즈에 대한 내성이 향상되는 것을 Direct Power Injection(DPI) 실험을 통해 확인하였다. 본 논문을 통해 제작된 DTMOS 슈미트 트리거 로직은 10 M~1 GHz 영역에서 전자파 내성이 향상된 것을 확인할 수 있었다.