• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1487-1493
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• 2013

Based on the finding that the 2-aminobenzamido group of MS-275 plays a crucial role in inhibiting HDACs through chelation of zinc existing at the active site of HDAC enzymes, novel N-(2-hydroxyphenyl)arylsulfonamide derivatives were synthesized for their potential ability to inhibit HDACs and evaluated for anticancer activity against human breast cancer cell line (MCF-7). Although the synthesized arylsulfonamides have failed to significantly inhibit total HDACs activity, phenyl carbamate-linked arylsulfonamide 10 and benzyl thiocarbamate-linked arylsulfonamide 15 exhibited good anticancer activities, which were only 4.3- and 3.6-fold lower anticancer activities, respectively, than MS-275 that is undergoing phase II clinical trials. These results suggest that these compounds may act as a selective HDAC inhibitor and probably N-(2-hydroxyphenyl) sulfamoyl group may play an important role in interacting with HDAC enzymes through chelation of zinc ion.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1489-1496
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• 2009

Amorphous indium-gallium-zinc-oxide thin-film-transistors (TFTs) were modeled successfully. Dependence of TFT characteristics on structure, thickness, and equilibrium electron-density of the active layer was studied. For mono-active-layer TFTs, a thinner active layer had higher field-effect mobility. Threshold voltage showed the smallest absolute value for the 20 nm active-layer. Subthreshold swing showed almost no dependence on active-layer thickness. For the double-active-layer case, better switching performances were obtained for TFTs with bottom active layers with higher equilibrium electron density. TFTs with thinner active layers had higher mobility. Threshold voltage shifted in the minus direction as a function of the increase in the thickness of the layer with higher equilibrium electron-density. Subthreshold swing showed almost no dependence on active-layer structure. These data will be useful in optimizing the structure, the thickness, and the doping ratio of the active layers of oxide-semiconductor TFTs.

• Resources Recycling
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• v.28 no.1
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• pp.23-31
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• 2019

Cementation is one of economical and efficient recycling method precipitating the metal ion in solution by adding another active metal. In this study for optimizing cadmium recovery efficiency, it was performed as a function of the effect of pH, temperature, particle size, and input amount of zinc in 0.1 M $CdSO_4$ solution and Ni-Cd battery leaching solutions, respectively. The particle size of zinc and temperature were key factors for Cd cementation and it was confirmed that the input amount of 2.6 of Zn/Cd ratio using granular-type zinc was optimal condition for selective Cd recovery efficiency at $25^{\circ}C$.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.35 no.1
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• pp.11-17
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• 2009

Betamethasone propionate, an anti-inflammatory glucocorticosteroid, was detected in cosmetics with no indication on the label of this compound as an ingredient. The product was formulated as a topical spray or shampoo and labeled to contain zinc pyrithione as the active ingredient. A thin-layer chromatographic analysis was carried out on silica gel plates to provide a first indication about the presence of a compound with steroid structure and reactivity; then high-performance liquid chromatography (HPLC) separation allowed the identification of the corticosteroid agent and its quantification. To identify the corticosteroid agent from these commercial samples we collected the fractions suspected to have ketol steroids by prep HPLC and identified the compound as betamethasone propionate by NMR and MS spectrometry. Then we synthesized the standard for the betamethasone 17-propionate and 21-propionate and quantitate the corticosteroids from the sample by HPLC with that standards. By this method we identified the corticosteroid compounds from some commercial cosmetics such as zinc pyrithione sprays. The finding of betamethasone propionate in the products was shown by comparison to an authenticated standard of betamethasone propionate by retention time on reverse-phase HPLC. Two of the tested products contained betamethasone propionate at the levels of 0.005 ${\sim}$ 0.02% and the others were free of betamethasone propionate.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.61-65
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• 2005

Despite a short history, the research on porous coordination polymers is gaining importance in inorganic chemistry thanks to facile synthesis, unambiguous characterization by X-ray diffraction and potentials as high-surface-area materials. Recently, gas sorption properties of various porous materials are under active investigations in order to know whether it is possible to store industrially important gases through physisorption, and porous coordination polymers are one of the most promising candidates for such a purpose. This article reviews two recent papers reporting a series of isomorphous frameworks based on Zn(II), dicarboxylate and diamine ligands and their gas sorption properties.

• Proceedings of the Membrane Society of Korea Conference
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• 1994.10a
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• pp.8-11
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• 1994

Disposal of hazardous ions in the aqueous streams is a significant industrial waste problem.. Waste streams from electronics, electroplating, and photographic industries contain metal ions such as copper, nickel, zinc, chromium(IV), cadmium, aluminum, silver, and gold, amongst others in various aqueous solutions such as sulfates, chlorides, fluorocarbons, and cyanides. Typical plating solutions having similar compositions are listed in Table 1. Spent process streams in catalyst manufacturing facilities also contain precious metals such as Ag, Pt, and Pd. Developing an effective recovery process of these metal ions for reuse is important.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.594-600
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• 2014

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.112-112
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• 2010

Zinc Oxide (ZnO) thin-films were deposited according to the magnetron sputtering method. The deposited ZnO films were annealed with RTA equipment at various annealing temperatures in an vacuum ambient. The influence of the annealing temperature on the structural, electrical, and optical properties of the ZnO films was experimentally investigated, and the effect of conductivity of the ZnO active layer on the device performance of the oxide-TFT was tested. As a result, an increase of the annealing temperature was attributed to improvements of crystallinity in ZnO films. The grain size was found to lead to an increase of conductivity in the ZnO films. Fabricated ZnO TFTs with annealed ZnO active layer provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the ZnO film, which was related to the structural properties of the ZnO film.