• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.582-582
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• 2013

Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

• Advances in nano research
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• 제12권6호
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• pp.593-603
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• 2022

The critical buckling temperature rise of a newly proposed piezoelectrically active sandwich plate (ASP) has been investigated in this work. This structure includes a porous polymeric layer integrated between two piezoelectric nanocomposite layers. The piezoelectric material is made of a passive polymeric material that is activated by lead-free nanowires (NWs) of zinc oxide (ZnO) embedded inside the matrix. In both nanocomposite layers and porous core, functional graded (FG) patterns have been considered for the distributions of ZnO NWs and voids, respectively. By adopting a higher-order theory of plates, the governing equations of thermal buckling are obtained. This set of equations is then treated using an extended mesh-free solution. The effects of plate dimensions, porosity states, and the nanowire parameters have been investigated on the critical buckling temperature rises of the proposed lightweight ASPs with different boundary conditions. The results disclose that the use of porosities in the core and/or mixing ZnO NWs in the face sheets substantially arise the critical buckling temperatures of the newly proposed active sandwich plates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• BMB Reports
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• 제53권3호
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• pp.160-165
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• 2020

The root meristem of Arabidopsis thaliana is protected by the root cap, the size of which is tightly regulated by the balance between the formative cell divisions and the dispersal of the outermost cells. We isolated an enhancer-tagged dominant mutant displaying the short and twisted root by the overexpression of ZINC-FINGER OF ARABIDOPSIS THALIANA1 (ZAT1) encoding an EAR motif-containing zinc-finger protein. The growth inhibition by ZAT1 was shared by ZAT4 and ZAT9, the ZAT1 homologues. The ZAT1 promoter was specifically active in the outermost cells of the root cap, in which ZAT1-GFP was localized when expressed by the ZAT1 promoter. The outermost cell-specific expression pattern of ZAT1 was not altered in the sombrero (smb) or smb bearskin1 (brn1) brn2 accumulating additional root-cap layers. In contrast, ZAT4-GFP and ZAT9-GFP fusion proteins were distributed to the inner root-cap cells in addition to the outermost cells where ZAT4 and ZAT9 promoters were active. Overexpression of ZAT1 induced the ectopic expression of PUTATIVE ASPARTIC PROTEASE3 involved in the programmed cell death. The EAR motif was essential for the growth inhibition by ZAT1. These results suggest that the three related ZATs might regulate the maturation of the outermost cells of the root cap.

• Bulletin of the Korean Chemical Society
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• 제32권spc8호
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• pp.2960-2964
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• 2011

The efficient asymmetric hydrosilylation of imines in the presence of polymethylhydrosiloxane has been investigated by screening chiral diamine-zinc complexes. A series of chiral diamine ligands were prepared from optically pure 1,2-diphenyl-1,2-ethanediamine and screened for effectiveness. N-Benzylic substituents were required for high enantioselectivity; ligands with bulky groups or extra coordinating groups such as OH and S lowered the catalytic activity. The level of asymmetric induction was usually in >90% ee range for aromatic imine substrates. A linear correlation between the ee of the ligand and that of the product was observed, indicating the presence of a 1:1 ratio of ligand to metal coordination in the active catalytic complex.

• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1150-1154
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• 2003

The voltage profile during discharge of the zinc air battery has very flat pattern until reach to end of discharge voltage. But, when zinc air battery is discharged by high current, the discharge voltage and energy becomes low. Therefore, we focused on effects of catalyst size to solve this problems by increasing active sites of oxygen reduction reaction. The size of catalyst was reduced from 27 to l${\mu}{\textrm}{m}$ and we examined average discharge voltage, capacity, energy, resistance and characteristics during GSM pulse discharge of zinc air battery with change of current density. And we also measured porosity of the cathode according to the ASTM. So we have got improvement of average discharge voltage and energy when catalyst was minimized and we have got optimum size of catalyst at 5${\mu}{\textrm}{m}$.

• 한국식품저장유통학회지
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• 제31권1호
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• pp.126-137
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• 2024

카라기난 기반 복합필름은 세 가지 다른 아연 염(zinc acetate, zinc chloride 및 zinc nitrate) 원료를 사용하여 합성한 ZnONPs를 카라기난에 첨가하여 solvent casting 방법으로 제작되었다. SEM 결과에 따르면, 사용된 아연 염의 종류에 따라 ZnONPs의 크기와 모양에 차이가 나타났지만, 모든 ZnONPs가 카라기난 복합필름 내에서 균일하게 분산되어 있는 것을 확인할 수 있었다. 카라기난 기반 복합필름(Car-ZnONPs)의 두께는 아연 염의 종류와 관계없이 순수 카라기난 필름에 비해 증가하였다. 파단 연신율(EB)은 증가하였고, 인장강도(TS)는 유의적으로 감소하였으며, 탄성 계수(EM)는 유의적 차이를 나타내지 않았다. 이를 통해 복합필름의 기계적 특성인 TS와 EB는 첨가된 나노입자의 크기와 첨가량에 영향을 받는다는 것을 확인하였다. 또한, 모든 종류의 Car-ZnONPs 복합필름은 E. coli O157:H7 및 L. monocytogenes 에 대해 강한 항균 활성을 나타냈으며, 특히 zinc chloride로 합성된 Car-ZnONPs^ZC 필름이 가장 우수한 항균 성능을 나타냈다. 이는 zinc chloride에서 합성된 나노입자가 다른 아연 염에 비해 더 많은 아연 이온을 방출하기 때문으로 판단된다. 아연 염의 종류가 ZnONPs의 항균 능력에 영향을 미치며, 이러한 영향은 염의 종류에 따라 변화하는 ZnONPs의 크기, 형태 및 아연 이온 방출 정도에서 기인한다. 평가된 복합필름 중 Car- ZnONPs^ZC가 가장 높은 자외선 차단 특성을 보였으며, 파단 연신율도 순수 카라기난 필름에 비해 유의미하게 증가하여, 포장된 식품의 안전성을 유지하고 유통기한을 연장하는 데 활성 포장 필름으로 사용될 수 있을 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.