• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1002-1004
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• 2009

Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.22-25
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• 2022

Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.78-82
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• 2023

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

• BMB Reports
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• v.49 no.12
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• pp.681-686
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• 2016

Fructose 1,6-bisphosphate aldolase (FBA) is important for both glycolysis and gluconeogenesis in life. Class II (zinc dependent) FBA is an attractive target for the development of antibiotics against protozoa, bacteria, and fungi, and is also widely used to produce various high-value stereoisomers in the chemical and pharmaceutical industry. In this study, the crystal structures of class II Escherichia coli FBA (EcFBA) were determined from four different crystals, with resolutions between $1.8{\AA}$ and $2.0{\AA}$. Native EcFBA structures showed two separate sites of Zn1 (interior position) and Zn2 (active site surface position) for $Zn^{2+}$ ion. Citrate and TRIS bound EcFBA structures showed $Zn^{2+}$ position exclusively at Zn2. Crystallographic snapshots of EcFBA structures with and without ligand binding proposed the rationale of metal shift at the active site, which might be a hidden mechanism to keep the trace metal cofactor $Zn^{2+}$ within EcFBA without losing it.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.5
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• pp.539-543
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• 2012

Cellulose Electro-Active Paper (EAPap) is attractive as a biomimetic actuator because of its merits: it is lightweight, operates in dry conditions, has a large displacement output, has a low actuation voltage, and has low power consumption. Cellulose is regenerated so as to align its microfibrils, which results in a piezoelectric paper. When chemically bonded and mixed with carbon nanotubes, titanium oxide, zinc oxide, tin oxides, the cellulose EAPap can be used as a hybrid nanocomposite that has versatile properties and that can meet the requirements of many application devices. This paper presents trends in recent research on the cellulose EAPap, mainly on material preparation and its use in devices, including biosensors, chemical sensors, flexible transistors, and actuators. This paper also explains wirelessly driving technology for the cellulose EAPap, which is attractive for use in biomimetic robotics and micro-aerial vehicles.

• Food Science of Animal Resources
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• v.34 no.2
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• pp.214-220
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• 2014

We investigated nutritional characteristics and active components in the liver of Wagyu${\times}$Qinchuan cattle and Qinchuan cattle produced in Shaanxi (China). We observed significant differences (p<0.05) in the proximate composition of protein, fat, carbohydrate, total energy, and glycogen. Wagyu${\times}$Qinchuan cattle liver showed higher (p<0.05) sodium, iron, zinc, and selenium concentrations than Qinchuan cattle liver. The amino acid composition of Wagyu${\times}$Qinchuan cattle liver was richer (p<0.05) in 13 types of amino acids, with the exception of Asp (10.06%), Val (5.86%), and Met (1.72%). Total essential amino acids accounted for almost half the composition (39.69%) in Wagyu${\times}$Qinchuan cattle liver. Wagyu${\times}$Qinchuan cattle liver had lower (p<0.05) levels of monounsaturated fatty acids (18.2%), but higher (p<0.05) levels of polyunsaturated fatty acids (35.11%), compared with Qinchuan cattle liver (23.29% and 28.11%, respectively). The thrombogenic index was higher in Qinchuan cattle liver (0.86) than in Wagyu${\times}$Qinchuan cattle liver (0.70), and the glutathione (38.0 mg/100g) and L-carnitine (2.12 ${\mu}M/g$) content was higher (p<0.05) in Wagyu${\times}$Qinchuan cattle liver than in Qinchuan cattle liver (29.8 mg/100g and 1.41 ${\mu}M/g$, respectively). According to the results obtained, the liver of Wagyu${\times}$Qinchuan cattle, which is insufficiently used, should be increasingly utilized to improve its commercial value.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2442-2451
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• 2018

Novel highly active visible-light photocatalysts in the form of zinc bismuth oxide ($ZnBi_2O_4$) and graphite hybrid composites were prepared by coupling via a co-precipitation method followed by calcination at $450^{\circ}C$. The asprepared $ZnBi_2O_4$-graphite hybrid composites were tested for the degradation of rhodamine B (RhB) solutions under visible-light irradiation. The existence of strong electronic coupling between the two components within the $ZnBi_2O_4$-graphite heterostructure suppressed the photogenerated recombination of electrons and holes to a remarkable extent. The prepared composite exhibited excellent photocatalytic activity, leading to more than 93% of RhB degradation at an initial concentration of $50mg{\cdot}L^{-1}$ with 1.0 g catalyst per liter in 150 min. The excellent visible-light photocatalytic mineralization of $ZnBi_2O_4-1.0graphite$ in comparison with pristine $ZnBi_2O_4$ could be attributed to synergetic effects, charge transfer between $ZnBi_2O_4$ and graphite, and the separation efficiency of the photogenerated electrons and holes. The photo-induced $h^+$ and the superoxide anion were the major active species responsible for the photodegradation process. The results demonstrate the feasibility of $ZnBi_2O_4-1.0graphite$ as a potential heterogeneous photocatalyst for environmental remediation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.351-359
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• 2015

Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.