• Title/Summary/Keyword: Active zinc

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Preparation of Water Soluble Polythiophenes Mediated by Highly Active Zinc

  • Kim, Seung-Hoi;Kim, Jong-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.30 no.10
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    • pp.2283-2286
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    • 2009
  • A convenient route for the preparation of water soluble polythiophenes is described. Reactions involving highly active zinc metal show unique properties, viz. tolerance of the ester group and regioselectivity to the thiophene ring. Poly [3-(ethyl-n-alkanoate)thiophene-2,5-diyl]s, poly [3-(n-carboxyalkyl)thiophene-2,5-diyl]s, and poly [3-(potassium- n-alkanoate)thiophene-2,5-diyl]s were easily prepared by utilizing highly active zinc.

Synthesis and Inhibitory Study of N-Oxide Containing Substrate Analogy Inhibitors of Carboxypeptidase A

  • 이경주;Kim, Dong H.
    • Bulletin of the Korean Chemical Society
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    • v.18 no.10
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    • pp.1100-1104
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    • 1997
  • Compounds containing a nitrone moiety were designed, synthesized and evaluated as a new type of active site zinc ligating substrate analog inhibitors for carboxypeptidase A. The kinetic results indicated that they are competitive inhibitors for the enzyme, supporting the design rationale that the oxygen of the nitrone forms a coordinative bond to the active site zinc ion. The present study demonstrates that nitrone is useful as a zinc coordinating ligand in the design of inhibitors for zinc containing proteolytic enzymes.

Peroxynitrite Inactivates Carbonic Anhydrase II by Releasing Active Site Zinc Ion

  • Kim, Young-Mi;Han, Sang-Hwa
    • Bulletin of the Korean Chemical Society
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    • v.25 no.5
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    • pp.711-714
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    • 2004
  • Peroxynitrite enters erythrocytes through band 3 anion exchanger and oxidizes cytosolic proteins therein. As a protein associated with band 3, carbonic anhydrase II may suffer from peroxynitrite-induced oxidative damages. Esterase activity of carbonic anhydrase II decreased as the concentration of peroxynitrite increased. Neither hydrogen peroxide nor hypochlorite affected the enzyme activity. Inactivation of the enzyme was in parallel with the release of zinc ion, which is a component of the enzyme's active site. SDS-PAGE of peroxynitrite-treated samples showed no indication of fragmentation but non-denaturing PAGE exhibited new bands with lower positive charges. Western analysis demonstrated that nitration of tyrosine residues increased with the peroxynitrite concentration but the sites of nitration could not be determined. Instead MALDI-TOF analysis identified tryptophan-245 as a site of nitration. Such modification of tryptophan residues is responsible for the decrease in tryptophan fluorescence. These results demonstrate that peroxynitrite nitrates tyrosine and tryptophan residues of carbonic anhydrase II without causing fragmentation or dimerization. The peroxynitrite-induced inactivation of the enzyme is primarily due to the release of zinc ion in the enzyme's active site.

Effect of Channel Scaling on Zinc Oxide Thin-Film Transistor Prepared by Atomic Layer Deposition

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.253-256
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    • 2010
  • Different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition. The properties of the ZnO TFTs were influenced by the active thickness and width-to-length (W/L) ratio of the device. The threshold voltage of ZnO TFTs shifted positively as the active layer thickness decreased, while the subthreshold slope decreased. The W/L ratio of ZnO TFTs also affected the mobility and subthreshold slope. An optimized TFT structure exhibited an on-tooff current ratio of above 106 with solid saturation.

Thickness Effects of Active Layers on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors (Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 활성층 두께의 영향)

  • Ma, Tae Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.433-437
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    • 2014
  • Transparent thin film transistors were fabricated on $n^+$-Si wafers coated by $Al_2O_3/SiO_2$. Zinc tin oxide (ZTO) films deposited by rf magnetron sputtering were employed for active layers. The mobility (${\mu}s$), threshold voltage ($V_T$), and subthreshold swing (SS) dependances on ZTO thickness were analyzed. The $V_T$ decreased with increasing ZTO thickness. The ${\mu}s$ raised from $5.1cm^2/Vsec$ to $27.0cm^2/Vsec$ by increasing ZTO thickness from 7 nm to 12 nm, and then decreased with ZTO thickness above 12 nm. The SS was proportional to ZTO thickness.

Manufacture and characteristic evaluation of Amorphous Indium-Gallium-Zinc-Oxide (IGZO) Thin Film Transistors

  • Seong, Sang-Yun;Han, Eon-Bin;Kim, Se-Yun;Jo, Gwang-Min;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.166-166
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    • 2010
  • Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

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Mutational Analysis of Two Conserved Active Site Tyrosine Residues in Matrilysin

  • Jaeho Cha
    • Journal of Life Science
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    • v.9 no.2
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    • pp.44-48
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    • 1999
  • The ionization of tyrosine residue is known to be involved in the stabilization of transition-state in catalysis of astacin based upon the astacin-transition state analog structure. Two tyrosine residues, Tyr-216 and Tyr-219, are conserved in all MMPs related with astacin family, We replaced Tyr-216 and Tyr-219 into phenylalanine, respectively and the zinc binding properties, kinetic parameters, and pH dependence of each mutant are determined in order to examine the role of tyrosine residue in matrilysin catalysis. Both mutants contain two zinc atoms per mol of enzyme, indicating that either tyrosime does not affect the zinc binding property of the enzyme. Y216F and Y219F mutants are highly active and the kcat/Km values are only decreased 1.1-1.5-fold compared to the wild-type enzyme. The decrease in the activity of the mutants is essentially due to the increase in Km value. The pH dependencies of the kcat/Km values for both mutants are similar to the corresponding dependencies obtained with the wild type enzyme. The pKa values at the alkaline side of both mutants are not changed. These kinetic and pH dependence results indicate that the ionization of active site tyrosine residue of matrilysin is not reflected in the kinetics of peptide hydrolysin as catalyzed by astacin.

Effects of Nitrogen Additive Gas on the Property of Active Layer and the Device Characteristic in Indium-zinc-oxide thin Film Transistors (산화인듐아연 박막 트랜지스터에서 질소 첨가가스가 활성층의 물성 및 소자의 특성에 미치는 영향)

  • Lee, Sang-Hyuk;Bang, Jung-Hwan;Kim, Won;Uhm, Hyun-Seok;Park, Jin-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.11
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    • pp.2016-2020
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    • 2010
  • Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

Degradation of Chlorinated Organic Compounds by Zero Valent Metals and an Electron carrier

  • Kim, Young-Hun
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2001.04a
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    • pp.53-56
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    • 2001
  • The degradation of tetrachloroethene (PCE) and trichloroethene (TCE) by vitamin B$_{12}$, an electron mediator was examined when zero valent metals (ZVMs) were used as built electron donors. Dechlorination of PCE and TCE by iron and zinc in the presence of vitamin B$_{12}$ showed that the zinc and vitamin B$_{12}$ combination greatly enhances the reaction rates for both PCE and TCE, but iron and vitamin B$_{12}$ result in an increase in reactivity only for PCE degradation, not for TCE degradation in comparing with meta]s only. This result indicates vitamin B$_{12}$(I) Is active towards both PCE and TCE degradation while vitamin B$_{12}$(II) is active towards both PCE. Calculated activation energies for the dechlorination of PCE in the presence of Vitamin B$_{12}$ showed that vitamin B$_{12}$ lowered the activation energy about 40-60 kJ/㏖ for the both metals.the both metals.

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