• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.882-885
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• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.651-658
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• 2017

This paper proposes an analysis method of performance degradation of antenna due to radio frequency interference between an antenna and adjacent noise sources using active scattering parameters. The radio frequency interference can be analyzed by the measured or simulated scattering parameters and by excited noise sources in the circuit as well. In this paper, a planar inverted-F antenna and a noise source are designed and fabricated to analyze radio frequency interference between the planar inverted-F antenna and noise source. The proposed analysis method uses active scattering parameters, of which verification is experimentally verified, and in simulation as well.

• Archives of Pharmacal Research
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• v.23 no.4
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• pp.413-417
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• 2000

The effect of ischemia/reperfusion-induced neuronal damage on the memory impairment were investigated using active avoidance and Morris water maze tasks in Wistar rats. Focal ischemia was induced by 1 h occlusion of the right middle cerebral artery (MCA) of Wistar male rats. Reperfusion was induced by releasing the occlusion and restoring the blood circulation for 24 h. The acquisition and preservation memory tested by active avoidance showed a significant difference between the sham and ischemia/reperfusion group. The water maze acquisition performance was also significant difference between sham and ischemia/repefusion groups in both latency and moving distance. The infarction volume was increased by the ischemia/reperfusion. Furthermore, the cresyl violet staining of the ischemia/reperfusion brain showed severe neuronal damage (pyramidal cell loss) in the cortex in addition to the striatum lesion of brain. This study shows that pyramidal cell damage in the cortex lesion may be partially related to memorial disturbance in the ischemia/reperfusion brain injury.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.10a
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• pp.75-79
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• 2001

In the recent years, as the research and the development of micro and precision machinery become active, the interest of micro actuators using SMA(Shape Memory Alloy) has been increased. The dynamic characteristic analysis of SMA is necessary for actuator application and many common researches report the material characteristics of SMA sufficiently. However, the research on dynamic characteristics is very deficient. In this paper, the helical spring are fabricated with NiTi SMA wire of high resistivity, The force, response speed, temperature, and displacement are measured by digital force gauge, infrared thermometer, and laser displacement sensor so that the dynamic characteristics of this SMA is analyzed. Also, bidirectional actuator was fabricated and experimented for its performance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.755-758
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• 1997

In the recent years, as the research and the development of micro and precision machinery become active, the interest of micro actuators using SMA(Shape Memory Alloy) has been increased. The dynamic characteristic analysis of SMA is necessary for actuator application and many common researches report the material characteristics of SMA sufficiently. However, the research of dynamic characteristics is very deficient. In this paper, the helical spring is fabricated with NiTi SMA wire of high resistivity The force, response speed, temperature, and displacement are measured by digital force gauge, infrared thermometer, and laser displacement sensor so that the dynamic characteristics of this SMA actuator is analyzed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• PNF and Movement
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• v.9 no.1
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• pp.55-63
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• 2011

Purpose : This study was to investigate the application of Rhythmic Initiation(RI) in the respect of information processing in motor learning. Methods : A computer-aided literature search was performed in PubMed and adapted to the other databases and the others were in published books. The following keywords were used: Rhythmic Initiation, attention, memory, motor accuracy, feedback, motor learning, motor control, PNF, cognition. Results : The characterization of RI is rhythmic motion of limb or body through the desired range, starting with passive motion and progressing to active resisted movement. This study suggested that the relationship between of RI and motor learning through the respect of information processing, memory, attention and motor accuracy. Conclusion : Only Rhythmic Initiation, specifically focused on the effects of information processing approach, suggesting that RI can be positively influeced on sensory-perception, attention, memory, motor accuracy. however, it is unclear whether positive effects in the laboratory and field can be generalized to improve. In addition, sustainability of motor learning with RI remains uncertain.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.10-13
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• 2003

The dynamic analysis of composite plate with embedded shape memory alloys (SMAs) is studied using the finite element method. Active frequency tuning of a composite plate under electrical heating of SMAs is analyzed. The actuation of SMAs is modeled by Brinson's one-dimensional constitutive equation. The influences of the boundary conditions, the ply orientations and the pre-strains of SMA wires on the thermo-dynamic response of composite plate are discussed. It is found that the effect of SMAs on the dynamic response of composite plate is significant.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.556-561
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• 2000

This paper deals with the control of an active bending actuator fur a catheter. The bending actuator with 40mm in length utilizes three zigzag SMA (shape memory alloy) springs which are equally located in the circumference between inner $({\phi}2.5 mm)$ and outer $({\phi}3.0mm)$ tube. It is purposed on realization of desired bending angle $(90^{\circ})$ and direction $(360^{\circ})$. It is also installed in front of the catheter and used to guide a path at extremely bent or branched blood vessel. The performance-analysis of the bending actuator are investigated fur the purpose of optimizing the control of the bending actuator. The analog joy stick is used to command a bending angle and direction for the fast and accurate response. According to the commands of the joy stick, tensile force of each SMA spring is computed and obtained by controlling the temperature of each SMA spring using PWM (pulse width modulation) of supplied electric power.