• 한국전자통신학회논문지
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• 제8권12호
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• pp.1825-1832
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• 2013

현재 국내에서 DTV 전환 이후 지상파 다채널 서비스 도입에 대한 필요성이 제기되면서 다채널 서비스 도입을 위한 정책을 추진하고 있다. 이에 따라 지상파 방송사들은 지상파 다채널 서비스 실현을 위해서 공동대응책을 마련하고 있다. 아울러 규제기관인 방송통신위원회 역시 지상파 다채널 서비스 정책 수립에 적극적인 입장이며, 지상파 방송사들과 함께 실험방송을 준비하고 있다. 이에 본 글은 지상파 다채널 서비스에서 제기되는 기술적 문제와 서비스 구현을 위한 정책적 방안을 살펴봄으로써 향후 지상파 다채널 서비스가 추구해야 할 방향과 규제기관의 정책수립에 도움이 되고자 한다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.127-130
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• 1998

Wireless multimedia networks require channel allocation strategies for various multimedia traffic since the mobility of users needs to be considered in addition to diversity of QoS requirements of multimedia traffic. In this paper, we propose an Efficient Channel Allocation strategy, based on prioritization of handoff calls used in Guard channel method. Gurad channels can be shared between non real time calls and real time handoff calls. To decrease the probability of handoff failure, when resources become scarce, the Call Admission Control can take some resources away from the active calls. It is shown through extensive simulations that the proposed strategy provides higher channel utilization and lower probability of handoff failure than existing strategies.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제13권4호
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• pp.1904-1921
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• 2019

In this paper, we investigate the problem of secure communications in multiple-input-multiple-output interference networks from the perspective of physical layer security. Specifically, the legitimate transmitter-receiver pairs are divided into different categories of active and inactive. To enhance the security performances of active pairs, inactive pairs serve as cooperative jammers and broadcast artificial noises to interfere with the eavesdropper. Besides, active pairs improve their own security by using joint transceivers. The encoding of active pairs and inactive pairs are designed by maximizing the difference of mean-squared errors between active pairs and the eavesdropper. In detail, the transmit precoder matrices of active pairs and inactive pairs are solved according to game theory and linear programming respectively. Experimental results show that the proposed algorithm has fast convergence speed, and the security performances in different scenarios are effectively improved.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• ETRI Journal
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• 제46권2호
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• pp.323-332
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• 2024

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-㎛ GaAs pseudomorphic high-electron mobility transistor (pHEMT) process. The MFCs consist of four-channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6-bit phase shifting, and 5-bit attenuation with a 44-bit serial-to-parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1-dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.594-600
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• 2014

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.22.1-22
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• 2001

In this paper we present Multiple-Channel Active Noise Control[ANC] system by employing Independent Component Analysis[ICA] and Adaptive Network Fuzzy Inference System[ANFIS]. ICA is widely used in signal processing and communication and it use prewhiting and appropriate choice of non-linearities, ICA can separate mixed signal. ANFIS controller is trained with the hybrid learning algorithm to optimize its parameters for adaptively canceling noise. This new method which minimizes a statistical dependency of mutual information(MI) in mixed low frequency noise signal and there is no need to secondary path modeling. The proposed implementations achieve more powerful and stable noise reduction than Filtered-X LMS algorithms which is needed for LTI assumption and precise secondary error

• 전자공학회논문지
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• 제54권1호
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• pp.33-38
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• 2017

본 논문에서는 채널 당 3.125-Gb/s 동작 속도를 갖는 4-채널 공통-캐소드 VCSEL 다이오드 드라이버 어레이 칩을 구현하였다. 스위칭 동작하는 메인 드라이버의 동작속도 향상을 위해, 액티브 인덕터를 사용한 전치증폭단과 이퀄라이저 기능을 탑재한 입력버퍼단으로 구성하였다. 특히 개선된 입력버퍼단의 경우, 주파수 영역의 피킹으로 대역폭 증대뿐 아니라 비교적 적은 전류로 동작하도록 설계하였다. 본 논문에서 사용한 VCSEL 다이오드는 2.2 V 순방향 전압과 $50{\Omega}$ 기생저항 및 850 fF 기생 캐패시턴스를 갖는다. 또한, 3.0 mA 변조전류 및 3.3 mA 바이어스 전류로 동작하므로, 두 개의 독립적인 전류소스로 구동 가능한 current steering 기반의 메인 드라이버를 설계하였다. 제안한 4-채널 광 송신기 어레이 칩은 $0.11-{\mu}m$ CMOS 공정을 이용하여 제작하였다. 칩 코어의 면적은 $0.15{\times}0.18{\mu}m^2$ 이며, 채널 당 22.3 mW 전력소모를 갖는다.