• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2395-2402
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• 2013

An active-RC channel selection filter (CSF) with the bandwidth of 40MHz and the improved linearity is proposed in this paper. The proposed CSF is the fifth butterworth filter which consists of a first order low pass filter, two second order low pass filters of a biquad architecture, and DC feedback circuit for cancellation of DC offset. To improve the linearity of the CSF, a body node of a MOSFET for a switch is connected to its source node. The bandwidth of the designed CSF is selected to be 10MHz, 20MHz and 40MHz and its voltage gain is controlled by 6 dB from 0 dB to 24 dB. The proposed CSF is designed by using 40nm 1-poly 8-metal CMOS process with a 1.2V. When the designed CSF operates at the bandwidth of 40 MHz and voltage gain of 0 dB, the simulation results of OIP3, in-band ripple, and IRN are 31.33dBm, 1.046dB, and 39.81nV/sqrt(Hz), respectively. The power consumption and layout area are $450{\times}210{\mu}m^2$ and 6.71mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.38-44
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• 2007

This paper describes a 12 bit 80MHz CMOS D/A converter for wireless transceiver. Proposed circuit in the paper employes segmented structure which consists of four stage 3bit thermometer decoders. Proposed D/A converter is manufactured 0.35um CMOS n-well digital standard process and measurement results show a ${\pm}1.36SB/{\pm}0.62LSB$ of INL/DNL and $46pV{\cdot}s$ of glitch energy. SNR and SFDR are measured to be 58.5dB and 64.97dB @ Fs=80MHz and Fin=19MHz with a total power consumption of 99mW. Such results proved that our work has low power consumption, high linearity, low glitch and improved dynamic performance. Therefore, our work can be appled to various high speed and high performance circuits.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.5
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• pp.197-203
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• 2016

In this paper, the dipole antenna that can control a beam steering were designed for attaching on LEO(Low Earth Orbit) small satellite. The proposed antenna was based on Yagi-Uda antenna. The parasitic element was proposed as a T-shape. Depending on the state of open or short at the end of a vertical element, we can choose a characteristic of the parasitic element with fixing a vertical element length of the parasitic element. Using this characteristic, we designed the director element and reflector element. The proposed antenna was designed to receive UHF 436.5 MHz. Antenna gain was chosen by link budget between one satellite and the other satellite or between the satellite and the ground station. By changing a vertical element length which is the largest variable that chooses an antenna characteristic, we confirmed that ${\lambda}/2$ length transformer has a result that improve 0.5 dB in comparison ${\lambda}/4$ length transformer from maximum gain direction. In production, we made an on/off switch composed of a diode, capacitor, and inductor control an open and short at the end of the parasitic element. As a result, the gain of antenna used in a link between one satellite and the other satellite had average 5.92 dBi. And the gain of antenna used in a link between the satellite and the ground station had average 0.99 dBi.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.18-18
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• 2003

Thioredoxin (Trx) is a small redox protein that is ubiquitously distributed from achaes to human. In diverse organisms, the protein is involved in various physiological roles by acting as electron donor and regulators of transcription and apoptosis as well as antioxidants. Sequences of Trx within various species are 27～69% identical to that of E. coli and all Trx proteins have the same overall fold, which consists of central five β strands surrounded by four α helices. The N-terminal cysteine in WCGPC motif of Trx is redox sensitive and the motif is highly conserved. Compared with general cysteine, the N-terminal cysteine has low pKa value. The result leads to increased reduction activity of protein. Recently, novel thio.edoxin-related protein (TRP14) was found from rat brain. TRP14 acts as disulfide reductase like Trx1, and its redox potential and pKa are similar to those of Trx1. However, TRP14 takes up electrons from cytosolic thioredoxin reductase (TrxR1), not from the mitochondrial thioredoxin reductase (TrxR2). Biological roles of TES14 were reported to be involved in regulating TNF-α induced signaling pathways in different manner with Trx1. In depletion experiments, depletion of TRP14 increased TNF-α induced phosphorylation and degradation of IκBα more than the depletion Trx1 did. It also facilitated activation of JNK and p38 MAP kinase induced by TNF-α. Unlike Trx1, TRP14 shows neither interaction nor interference with ASK1. Here, we determined three-dimensional crystal structure of TRP14 by MAD method at 1.8Å. The structure reveals that the conserved cis-Pro (Pro90) and active site-W-C-X-X-C motif, which may be involved in substrate recognition similar to Trx1 , are located at the beginning position of strand β4 and helix α2, respectively. The TRP14 structure also shows that surface of TRP14 in the vicinity of the active site, which is surrounded by an extended flexible loop and an additional short a helix, is different from that of Trx1. In addition, the structure exhibits that TRP14 interact with a distinct target proteins compared with Trx1 and the binding may depend mainly on hydrophobic and charge interactions. Consequently, the structure supports biological data that the TRP14 is involved in regulating TNF-α induced signaling pathways in different manner with Trx1.

• Journal of Life Science
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• v.28 no.9
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• pp.1100-1117
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• 2018

The Ras superfamily of small G-proteins acts as a molecular switch on the intracellular signaling pathway. Upon ligand stimulation, inactive GTPases (Ras-GDP) are activated (Ras-GTP) using guanine nucleotide exchange factor (GEF) and transmit signals to their downstream effectors. Following signal transmission, active Ras-GTP become inactive Ras-GDP and cease signaling. However, the intrinsic GTPase activity of Ras proteins is weak, requiring Ras GTPase-activating protein (RasGAP) to efficiently convert RAS-GTP to Ras-GDP. Since deregulation of the Ras pathway is found in nearly 30% of all human cancers, it might be useful to clarify the structural and physiological roles of Ras GTPases. Recently, RasGAP has emerged as a new class of tumor-suppressor protein and a potential therapeutic target for cancer. Therefore, it is important to clarify the physiological roles of the individual GAPs in human diseases. The first RasGAP discovered was RASA1, also known as p120 RasGAP. RASA1 is widely expressed, independent of cell type and tissue distribution. Subsequently, neurofibromatosis type 1 (NF1) was discovered. The remaining GAPs are affiliated with the GAP1 and synaptic GAP (SynGAP) families. There are more than 170 Ras GTPases and 14 Ras GAP members in the human genome. This review focused on the current understanding of Ras GTPase and RasGAP in human diseases, including cancers.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.4
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• pp.491-497
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• 2015

In this paper a method of design and Implementation of RFID based control system for reducing standby power consumption at the power outlet is described. The system is composed of a RF controlled power outlet having relay and an active RFID tag communicating with the RF reader module controlling the relay. When the tag carried by human approaches to the RF reader the reader recognizes the tag and switch off the relay based on the RSSI level measurement. A low power packet prediction algorithm has been used to decrease the DC power consumption at both the tag and the RF reader. The result of experiment shows that successful operation of the relay control has been obtained while low power operation of the tag and the reader is achieved using above algorithm. Also setting the distance between the reader and the tag by controlling transmission power of the tag and adjusting the duty cycle of the packet waiting time when the reader is in idle state allows us to reduce DC power consumption at both the reader and the tag.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.154-158
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• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Aerospace Engineering and Technology
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• v.11 no.2
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• pp.1-11
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• 2012

This paper describes the transmit/receive(T/R) module for the space based X-band active phased array radar. T/R module is the integrated module which is assembled by the transmitting and receiving RF semiconductor devices to enable the electronically beam steering of the phased array antenna and the key component of the SAR payload. T/R module can selectively receive the polarization signals by the switch according to the established technology but now the technological trend of the T/R module is to receive the horizontal and vertical polarization signal simultaneously. Therefore the research and development of the dual polarization receiving channel T/R module is actively in progress. In this study, as the prior research for the next generation SAR payload, the technological trend of the active phased array radar T/R module and the result of the preliminary design of the dual receiving channel T/R module were described.