• 한국항공우주학회지
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• 제36권6호
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• pp.550-557
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• 2008

영구히 장착된 배열 압전 능동 센서를 사용하여 복합재 보강판의 볼트 구멍에 있는 층간분리 손상을 탐지하였다. 다양한 신호처리 기법을 사용하여 국부적인 수직하중에 의하여 발생한 볼트 구멍 주위의 눈에 보이지 않는 작은 층간분리를 탐지하였다. 배열 압전 센서를 사용하여 진단신호를 생성하였으며, 응답신호를 측정하였다. 응답신호를 신호 처리하여 손상에 민감한 특성들을 추출하였다. 이 특성들을 사용하여 손상 지수를 계산하였고, 손상 지수를 사용하여 손상의 유무와 위치를 추정하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제38권10호
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• pp.1310-1317
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• 2014

In our daily life, the need of energy increases day by day. However, the amount of natural resources on the earth is limited and thus gaining renewable energy as an energy resource is one of the important and urgent problems. Solar energy is one of the most popular available energy sources that can be converted into electricity by using solar panels. In order for solar panels to produce maximal output power, the incident angle of the sunlight needs to be persistently perpendicular to the solar panel. By the way, most of the solar panels are installed at fixed position and direction. Therefore, as the sun's position changes, it is impossible to produce maximal output power inevitably. To improve this problem, in this paper, a sun tracking system using two degree-of-freedom (DOF) active sensor array is proposed so that the solar panel may always direct sunlight perpendicularly. And also a series of software, such as a search mode and a holding mode, which can control the developed sun tracking system is developed. Several experiments using the implemented sun tracking system are executed and the effectiveness of the system is verified from the experimental results.

• 한국음향학회지
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• 제23권5호
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• pp.370-375
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• 2004

본 논문에서는, 미지 위치의 원거리 능동음원을 이용하여 해저고정형 선배열 센서에 대한 3차원 배열형상추정 기법을 제안하였다. 본 연구는 센서에 도달하는 음파가 평면파라는 가정 하에 기준센서와 나머지 센서간의 음파도달 시간지연, 센서위치 및 입사각과의 선형방정식의 해를 반복적 최소자승법에 의해 구함으로서 센서위치 추정이 가능하다. 제안된 기법의 타당성을 검증하기 위해 컴퓨터 시뮬레이션과 실제 해상실험을 수행하였으며, 이론적 분석을 통하여 음원 위치 분포에 따른 성능 및 시간지연 오차에 따른 센서위치 추정 성능을 분석하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.35-41
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• 2017

We propose a novel multi-photodiode array (MPDA) based retinal implant IC with on/off stimulation strategy for a visual prosthesis with improved spatial resolution. An active pixel sensor combined with a comparator enables generation of biphasic current pulses when light intensity meets a threshold condition. The threshold is tuned by changing the discharging time of the active pixel sensor for various light intensity environments. A prototype of the 30-channel retinal implant IC was fabricated with a unit pixel area of $0.021mm^2$, and the stimulus level up to $354{\mu}A$ was measured with the threshold ranging from 400 lx to 13120 lx.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 춘계학술대회논문집
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• pp.368-373
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• 2003

This paper presents a study of low frequencies volume velocity vibration control of a smart panel in order to reduce sound transmission. A distributed piezoelectric quadratically shaped polyvinylidene fluoride (PVDF) polymer film is used as a uniform force actuator and an array of 4$\times$4 accelerometer is used as a volume velocity sensor for the implementation of a single-input single-output con rot system. The theoretical and experimental study of sensor-actuator frequency response function sho vs that this sensor-actuator arrangement provides a required strictly positive real frequency response function below about 900Hz. Direct velocity feedback could therefore be implemented with a limited gain which gives reductions of about 15㏈ in vibration level and about 8 ㏈ in acoustic power level at the (1, 1) mode of the smart Panel. It has been also shown that the shaping error of PVDF actuator could limit he stability and performance of the control system.

• 센서학회지
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• 제27권6호
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• 한국음향학회지
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• 제31권4호
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• pp.205-213
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• 2012

동해와 남해에서 능동 음향센서 배열 신호를 측정하고, 신호의 공간 상관성을 분석하였다. 주변소음, 표적신호, 해수면과 후방산란 신호, 해상풍, 수직 수온을 25시간 동안 동시에 관측하였다. 남해 측정에서는 분석결과로 부터 주변소음의 공간 상관성이 표적신호 보다 매우 낮고, 표적신호는 전체 음향센서에서 0.5 이상의 상관성을 보였다. 동해 측정에서는 해수면 잔향 신호의 공간 상관성은 해수면 입사각이 클때 높고, 상관성이 0.5이상인 무차원화된 배열의 최대길이는 26도의 입사각에서 3.0, 32도의 입사각에서 3.5였다. 배열센서의 형상과 배열성능을 결정하는 기준이 되는 공간 상관성 파악을 위해서는 향후에 다양한 시공간 변동을 포함한 지속적인 관측이 필요하다.

• 센서학회지
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• 제27권5호
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• pp.311-316
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• 2018

An antenna-coupled bolometer-type terahertz sensor was designed, fabricated, evaluated, and utilized to obtain terahertz transmission images. The sensor consists of a thin film bowtie antenna that resonates accordingly in response to an incident terahertz beam, a heater that converts the applied current in the antenna into heat, and a microbolometer that converts the rise in temperature into a change in resistance. The device is fabricated by a bulk micromachining process on a 4-inch silicon wafer. The fabricated sensor chip has a size of $2{\times}2mm$ and an active area of $0.1{\times}0.1mm^2$. The temperature coefficient of resistance (TCR) of the bolometer film (VOx) is 2.0%, which is acceptable for bolometer applications. The output sensor signal is proportional to the power of the incident terahertz beam. Transmission images were obtained with a 2-axis scanning imaging system that contained the sensor. The small active area of the sensor will enable the development of highly sensitive focal plane array sensors in terahertz imaging cameras in the future.

• 센서학회지
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• 제27권3호
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• 센서학회지
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• 제14권4호
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• pp.272-277
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• 2005

A CMOS active pixel sensor has been designed and fabricated using standard 2-poly and 4-metal $0.35{\mu}m$ CMOS processing technology. The CMOS active pixel sensor has been made up of a unit pixel having a highly sensitive PMOSFET photo-detector and electronic shutters that can control the light exposure time to the PMOSFET photo-detector, correlated-double sampling (CDS) circuits, and an 8-bit two-step flash analog to digital converter (ADC) for digital output. This sensor can obtain a stable photo signal in a wide range of light intensity. It can be realized with a special function of an electronic shutter which controls the light exposure-time in the pixel. Moreover, this sensor had obtained the digital output using an embedded ADC for the system integration. The designed and fabricated image sensor has been implemented as a $128{\times}128$ pixel array. The area of the unit pixel is $7.60{\mu}m{\times}7.85{\mu}m$ and its fill factor is about 35 %.