• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.172-182
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• 2014

In this paper, is is presented the result of design and fabrication for X band T/R module using in active array radar. The high power RF circuit was fabricated using GaN element, so that high power and high efficiency was fulfilled comparing with the previous T/R module that have under 50 W output power for X band. Designed X band T/R module demonstrated 200 W(53 dBm) peak power, 20 us pulse width with 0.4 dB pulse droop and 20 % duty cycle. And it has characteristics of 26 dB receive gain and 4.5 dB noise figure. The structure was applied to prevent serious damage of receive path and GaN HPA by transmitting power during trasmit time of a pulse radar.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.141-147
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• 2008

This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.277-277
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• 2010

The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.5
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• pp.87-92
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• 2022

In this paper, a study was conducted on the design of an array element that can be applied to the AESA radar for seeker. An antenna for application to AESA radar should choose an optimal radiation element to be applied to an array antenna in order to secure electronical beam steering characteristics, and consider beam steering characteristics when designing. In particular, in order to satisfy the wide-angle beam steering characteristics, the wide-angle impedance matching technique should be used to minimize the scan blindness region that may occur during wide-angle steering. As such, securing the stability of system operation is becoming an important design consideration for AESA radar. In this paper, WAIM is applied to the end of the radiation element to improve the characteristics of the radiation element applied to the AESA radar antenna device, and the change in the performance of the active reflection coefficient, which is a stable operation index of the system, is reviewed. The final performance result verified the validity of the proposed method by mathematically synthesizing the simulation data.

• Journal of Ginseng Research
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• v.48 no.2
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• pp.211-219
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• 2024

Background: Recently, plant-derived exosome-like nanoparticles (PDENs) have been isolated, and active research was focusing on understanding their properties and functions. In this study, the characteristics and molecular properties of ginseng root-derived exosome-like nanoparticles (GrDENs) were examined in terms of skin protection. Methods: HPLC-MS protocols were used to analyze the ginsenoside contents in GrDENs. To investigate the beneficial effect of GrDENs on skin, HaCaT cells were pre-treated with GrDENs (0-2 × 10⁹ particles/mL), and followed by UVB irradiation or H₂O₂ exposure. In addition, the antioxidant activity of GrDENs was measured using a fluorescence microscope or flow cytometry. Finally, molecular mechanisms were examined with immunoblotting analysis. Results: GrDENs contained detectable levels of ginsenosides (Re, Rg1, Rb1, Rf, Rg2 (S), Gyp17, Rd, C-Mc1, C-O, and F2). In UVB-irradiated HaCaT cells, GrDENs protected cells from death and reduced ROS production. GrDENs downregulated the mRNA expression of proapoptotic genes, including BAX, caspase-1, -3, -6, -7, and -8 and the ratio of cleaved caspase-8, -9, and -3 in a dose-dependent manner. In addition, GrDENs reduced the mRNA levels of aging-related genes (MMP2 and 3), proinflammatory genes (COX-2 and IL-6), and cellular senescence biomarker p21, possibly by suppressing activator protein-1 signaling. Conclusions: This study demonstrates the protective effects of GrDENs against skin damage caused by UV and oxidative stress, providing new insights into beneficial uses of ginseng. In particular, our results suggest GrDENs as a potential active ingredient in cosmeceuticals to promote skin health.

• Journal of electromagnetic engineering and science
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• v.3 no.2
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• pp.118-125
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• 2003

This paper presents a 5.8-㎓ oscillator that uses a novel defected ground structure(DGS), which is etched on the metallic ground plane. As the suggested defected ground structure is the structure for mounting an active device, it is the roles of a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM simulation ,md simple circuit analysis method. In order to demonstrate a new DGS oscillator, we designed the oscillator at 5.8-㎓. The experimental results show 4.17 ㏈m output power with over 22 % dc-to-RF power efficiency and - 85.8 ㏈c/Hz phase noise at 100 KHz offset from the fundamental carrier at 5.81 ㎓.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.3 no.1
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• pp.108-118
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• 2009

In this paper we develop an indoor location tracking system and its 3D tracking monitoring viewer, viz., 3D Navigation Viewer (3DNV). We focus on the integration of an indoor location tracking system with the Virtual Reality Modeling Language (VRML), to facilitate a representation of the user's spatial information in virtual indoor environments that is synchronized with the physical location environment. The developed indoor location tracking system employs beacons as active transmitters, and a listener as a passive receiver. The distance information calculated from the difference speeds of RF and Ultrasonic signals is exploited, to determine the user's physical location. This is essential in supporting third parties like doctors and caregivers in identifying the activities and status of a particular individual via 3DNV. 3DNV serves as a unified user interface for an indoor location tracking system, showing the viewpoint and position of the target in virtual indoor environments. It was implemented using VRML, to provide an actual real time visualization of the target's spatial information.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.