• 전자공학회논문지 IE
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• 제43권2호
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• pp.11-15
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• 2006

FPD (flat panel display)의 능동구동 (active matrix) 방식의 플렉시블 디스플레이를 위해 PES의 플라스틱 기판위에 극저온 다결정 실리콘 박막 트랜지스터를 제작하였다. 상온에서도 박막의 증착이 가능한 RF 마크네트론 스퍼터링과 양질의 다결정 실리콘 박막을 얻을 수 있다고 알려진 XeCl 엑시머 레이져 열처리를 이용하였으며 모든 공정이 150$^{\circ}C$ 이하의 극저온에서 이루어졌다. 플라스틱 기판에 형성한 실리콘 박막 트랜지스터는 344 $mJ/cm^2$ 의 에너지 밀도에서 결정화 하였을 때 이동도 63.64$cm^2/V$ 로 기판에 회로를 집적할 수 있기에 충분한 특성을 얻을 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

• 한국전자파학회논문지
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• 제22권7호
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• pp.729-736
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• 2011

본 논문은 X-대역에서 바랙터 다이오드가 없는 전압 제어 발진기 구조를 제안하고, 마이크로웨이브 레이더 신호 감지용 수신기에 적용 가능성을 확인하였다. 부성 저항을 발생하는 능동 소자의 콜렉터-베이스 PN-접합으로 바랙터 다이오드를 대체하여, 단일 RF BJT 소자로 전압 제어 발진기를 구현하여 수신기에서 요구하는 튜닝 전압 1.0~7.0 V에서 11.20~11.75 GHz 주파수 가변 특성, 9.0~12.0 dBm 출력 전력 및 선형적인 주파수 튜닝 특성을 만족하였다.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• 한국컴퓨터정보학회논문지
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• 제8권1호
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• pp.13-19
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• 2003

유연 생산 시스템(FMS)이나 자동화 창고(AWS) 등에 이용되는 AGV(Automated Guided Vehicle)에 관하여 많은 연구가 진행 중이다. 기존의 AGV는 마그넷 테이프나 전기와이어, RF나 Laser를 가이드라인으로 사용하고 있어 가이드라인 설치와 변경 시 시간과 비용이 많이 드는 단점이 있다. 본 논문에서는 단일 컬러 CCD카메라를 가지고 50mm 황색 컬러테이프를 가이드라인으로 사용하여 주행하는 AGV를 구현하였다. 컬러테이프를 사용하므로 라인설치 및 변경 추가 시 작업 시간이 빠르고 비용이 적게 드는 장점이 있다. 구현한 AGV의 구조와 컬러 특성만을 추출하여 주행용 가이드라인을 탐색하는 영상처리 기법과 AGV주행 결과를 제시하였다.

• Mycobiology
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• 제28권1호
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• pp.33-38
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• 2000

Mycelium of Hericium erinaceum isolate KU-1 was cultured in liquid medium (HL medium) and solid medium (Ko medium) at pH 4.0 in $28^{\circ}C$. 1.0% glucose or fructose was the most favorable carbon source, and 0.2% amonium acetate or $NaNO_3$ was an exellent nitrogen source for mycelial growth as well as production of antimicrobial substances. The mixture of saw dust 70% with rice bran 30% (SR medium) was the substrate for formation of sporophores. The active substrates in extracts from mycelium, culture filtrate and fruiting body were separated by TLC. The solvent for TLC was EtOAc: Chloroform: MeOH (10 : 5 : 10). Phenol-like substances appeared at Rf $0.5{\sim}0.9$, and fatty acid-like substances appeared at Rf $0.1{\sim}0.2$. The purified materials from the extracts showed antimicrobial effects to Escherichia coli, Bacillus subtilis, Staphylococcus aureus, Aspergillus niger, Candida albicans and Microsporum gypseum. The S. aureus was the most inhibited. Minimal inhibitory concentration (MIC) of purified white powder and the Hercenone derivatives against S. aureus were $5.65\;{\mu}g/ml$ and $1.85\;{\mu}g/ml$, respectively.

• 제어로봇시스템학회논문지
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• 제14권6호
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• pp.608-614
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• 2008

This paper describes a location tracking system to guide landing process of an Unmanned Helicopter(UMH) exploiting MIT Cricket nodes. For automatic landing of a UMH, a precise positioning system is indispensable. However, GPS(Global Positioning System) is inadequate for tracking the three dimensional position of a UMH because of large positioning errors. The Cricket systems use Time-Difference-of-Arrival(TDoA) method with ultrasonic and RF(Radio Frequency) signals to measure distances. They operate in passive mode in that a listener attached to a moving device receives distance signals from several beacons located at fixed points on ground. Inevitably, this passive type of implementation causes large disturbances in measuring distances between beacons and the listener due to wind blow from propeller and turbulence of UMH body. To cope with this problem, we proposed active type of implementation for positioning a UMH. In this implementation, a beacon is set up at UMH body and four listeners are located at ground area at least where the UMH will land. A pair of Ultrasonic and RF signals from the beacon arrives at several listeners to calculate the position of the UMH. The distance signals among listeners are synchronized with a counter value appended to each distance signals from the beacon.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1957-1959
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• 2000

The PD measurement method is very useful to detect insulation degradation. Recently, the HFPD(High Frequency Partial Discharge) measurement testing is widely used in partial discharge measurement of HV machines because HFPD measurement testing receives less influence of external noise and has a merit of good sensitivity. Therefore it is very useful method compare to previous conventional PD testing method and effective diagnosis method in power transformer that requires in-service diagnosis. But partial discharges have very complex characteristics of discharge pattern so it is required continuous research to development of precise analysis method. In this study, simulated transformer is manufactured and HFPD occurred from simulated transformer is measured with broad band antenna and active-line RF measurement system in real time, the degradation grade of transformer is analyzed through produced patterns in simulated transformer according to applied voltages. Also the PD pattern which was measured with EMC analyzer and RF measurement system is compared.