• The Plant Pathology Journal
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• v.16 no.3
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• pp.130-136
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• 2000

Differences in physiological and biochemical responses between sensitive and tolerant rice cultivars to ozone were investigated to develop reliable indications of early ozone damage. Three Korean local rice cultivars -sen-sitive cultivar Dongjin (DJ), moderately tolerant cultivar Hwayeong (HY) and tolerant cultivar Ilmee (IM) were exposed to ozone at the concentrations of 100 nl $\textrm{l}^{-1}$ or 200 nl $\textrm{l}^{-1}$ , 8 h per day for 10 days in a controlled-environment fumigation chamber. The rice cultivars seemed to be endurable to ozone stress at the concentration of 100 nl $\textrm{l}^{-1}$ which is frequently monitored during the growing season in summer. However, severe damage was induced and differential sensitivity was clearly noted among the rice cultivars at the higher ozone concentration. Activation of the glutathion (GR) -ascorbate peroxidase (APX) cycle was likely to be responsible for protection of rice plants against ozone exposure, relating difference in sensitivity of rice cultivars to ozone. Photosynthetic activity appeared to be one of sensitive responses, for which chlorophyll fluorescence and leaf greenness can together provide a very reliable index, a degree of photosynthetic damages by ozone. Formation of malondialdehyde (MDA) was also considered as an indication that can differentiate cultivars sensitivity to ozone. However, the changes in polyamines and total phenolics were not consistent with exposed ozone concentrations and/or ozone sensitivity of the cultivars. The behavior of polyamines and phenolics in the damaged plants at high ozone levels could be interpreted as an indication of ozone injury rather than activation of additional protection mechanisms scavenging active oxygen species formed by ozone. Several responses triggered by ozone could explain the differential sensitivity of the rice cultivars and be used as reliable indications of relative ozone damage to rice plant.

• Korean Journal of Pharmacognosy
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• v.47 no.3
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• pp.211-216
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• 2016

In the course of our continuing search for biologically active components from Korean medicinal plants, we isolated the main compound, luteolin 5-glucoside from aqueous fraction of Ajuga spectabilis. The structure was elucidated by the basis of $^1H$ and $^{13}C$ NMR and TOF ESI-MS data. Quantitative analysis of luteolin 5-glucoside was carried out on a XBridge C18 column ($S-5{\mu}m$, $4.6{\times}250mm$) with gradient elution composed of acetonitrile:water. The results exhibit that the average content of main compound in A. spectabilis were 0.048%. Oxidative stress plays a major role Alzheimer's disease (AD) and other neurodogenerative disease. AD is major health problem and there is currently no clinically accepted treatment to cure or stop its progression. Pretreatment with luteolin 5-glucoside markedly attenuated $H_2O_2$-induced cell viability loss in a dose-dependent manner. Luteolin 5-glucoside also inhibited the formation of intracellular reactive oxygen species in SH-SY5Y. The results suggest that luteolin 5-glucoside from A. spectabilis has protective effects against oxidative stress-induced cytotoxicity, which might be a potential therapeutic compound for treating and/or preventing neurodegenerative disease implicated with oxidative stress.

• Journal of the Korean Wood Science and Technology
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• v.35 no.6
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• pp.126-134
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• 2007

This study reviewed the application of an extract from Kalopanax pictus stem bark and root bark as natural antioxidants. To investigate the effect on cell toxic level against transformed mouse fibroblast L929 in formula added with various extracts from Kalopanax pictus stem bark and root bark, this experiment was carried out by in vitro cytotoxicity method. Using DCFA-DA method, oxidative stress in cell was measured with other antioxidant activity methods including DPPH assay and NBT assay. Active oxygen inhibition rate for root bark insoluble hot water extracts showed the highest with 57.9% for 15 min treatment. In DPPH and NBT test, antioxidant activities of methanol extract from stem bark and insoluble hot water extract from stem bark were 96% (at 0.1%) and 95% (at 0.5%), respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.470-470
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• 2012

Organic thin film transistors (OTFTs) backplane constitute the active elements in new generations of plastic electronic devices for flexible display. The overall OTFTs performance is largely depended on the properties and quality of each layers of device material. In solution based process of organic semiconductors (OSCs), the interface state is most impediments to preferable performance. Generally, a threshold voltage (Vth) shift is usually exhibited when organic gate insulators (OGIs) are exposed in an ambient air condition. This phenomenon was caused by the absorbed polar components (i.e. oxygen and moisture) on the interface between OGIs and Soluble OSCs during the jetting process. For eliminating the polar component at the interface of OGI, the role of high vacuum seasoning on an OGI for all solution processable OTFTs were studied. Poly 4-vinly phenols (PVPs) were the material chosen as the organic gate dielectric, with a weakness in ambient air. The high vacuum seasoning of PVP's surface showed improved performance from non-seasoning TFT; a $V_{th}$, a ${\mu}_{fe}$ and a interface charge trap density from -8V, $0.018cm^2V^{-1}s^{-1}$, $1.12{\times}10^{-12}(cm^2eV)^{-1}$ to -4.02 V, $0.021cm^2V^{-1}s^{-1}$, $6.62{\times}10^{-11}(cm^2eV)^{-1}$. These results of OTFT device show that polar components were well eliminated by the high vacuum seasoning processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.245-245
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• 2012

Syntheses of oxide supported metal catalysts by wet-chemical routes have been well known for their use in heterogeneous catalysis. However, uniform deposition of metal nanoparticles with controlled size and shape on the support with high reproducibility is still a challenge for catalyst preparation. Among various synthesis methods, arc plasma deposition (APD) of metal nanoparticles or thin films on oxide supports has received great interest recently, due to its high reproducibility and large-scale production, and used for their application in catalysis. In this work, Au and Pt nanoparticles with size of 1-2 nm have been deposited on titania powder by APD. The size of metal nanoparticles was controlled by number of shots of metal deposition and APD conditions. These catalytic materials were characterized by x-ray diffraction (XRD), inductively coupled plasma (ICP-AES), CO-chemisorption and transmission electron microscopy (TEM). Catalytic activity of the materials was measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. We found that Au/$TiO_2$ is reactive, showing 100% conversion at $110^{\circ}C$, while Pt/$TiO_2$ shows 100% conversion at $200^{\circ}C$. High activity of metal nanoparticles suggests that APD can be used for large scale synthesis of active nanocatalysts. We will discuss the effect of the structure and metal-oxide interactions of the catalysts on catalytic activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.295-304
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• 1994

$Mo-V-O/SnO_2$(VM/Sn) and $SnO_2/Mo-V-O$(Sn/VM) catalysts have been prepared and characterized by XRD, BET, SEM and TPD of ammonia. The catalytic reaction of acrolein oxidation with these catalysts, in a continuous-flow fixed-bed reactor, showed that they had higher conversion of acrolein and higher yield of acrylic acid than those of Mo-V-O itself. The origin of the observed synergy studied by TPD, TPR and TPO is explained by the cooperation of $SnO_2$ and Mo-V-O at their interfaces where electrons flow from Mo-V-O phase to $SnO_2$ and $SnO_2$ produces spill-over oxygens, which, by being transported onto the surface of Mo-V-O, reoxidize the partially reduced active sites.

• Applied Chemistry for Engineering
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• v.21 no.3
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• pp.278-283
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• 2010

The cationic polymerization of oxolane high explosives which have pendant explosive groups such as azido, nitrato and hydrazino is investigated theoretically using the semiempirical MINDO/3, MNDO and AM1 methods. The nucleophilicity and basicity of oxolane high explosives can be explained by the negative charge on oxygen atom of oxolane. The reactivity of propagation in the polymerization of oxolane can be represented by the positive charge on carbon atom and the low LUMO energy of active species of oxolane. The reaction of the oxolane high explosives in oxonium ion form to the open chain carbenium ion form is expected by computational stability energy (17.950~30.197 kcal/mol) of the oxonium ion and carbenium ion favoring the carbenium ion. The relative equilibrium concentration of cyclic oxonium ion and carbenium ion is found to be a major determinant of mechanism, owing to the rapid equilibrium of these catoinic forms. Based on calculation, in the prepolymer propagation step, $S_N1$ mechanism will be at least as fast as that for $S_N2$ mechanism.