• Title/Summary/Keyword: Active Metal

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Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers

  • Martins, Rodrigo;Pereira, Luis;Barquinha, Pedro;Correia, Nuno;Goncalves, Goncalo;Ferreira, Isabel;Dias, Carlos;Correia, N.;Dionisio, M.;Silva, M.;Fortunato, Elvira
    • Journal of Information Display
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    • v.10 no.4
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    • pp.149-157
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    • 2009
  • Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

IZO/Ag/IZO Multilayers Prepared by Magnetron Sputtering for Flexible Transparent Film Heaters (마그네트론 스퍼터링 법을 이용한 IZO/Ag/IZO 다층 박막 투명 면상 발열체)

  • Park, So-Won;Gang, Dong-Ryeong;Kim, Na-Yeong;Hwang, Seong-Hun;Jeon, Seung-Hun;ZhaoPin, ZhaoPin;Kim, Tae-Hun;Kim, Seo-Han;Park, Cheol-U;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.114.2-114.2
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    • 2017
  • Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in part of the device. Also, heating efficiency is low because it has high sheet resistance ($R_S$). Resistance of indium zinc oxide (IZO) is similar to ITO and it can be used to flexible applications due to its amorphous structure. To solve these problems, our study introduced hybrid layers of IZO/Ag/IZO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thickness of the metal interlayer. It was found that the sheet resistance of the multilayer was mainly dependent on the thickness of the Ag layers. The $R_S$ of IZO(40)/Ag/IZO(40nm) multilayer was 5.33, 3.29, $2.15{\Omega}/{\Box}$ for Ag thickness of 10, 15, and 20nm, respectively, while the $R_S$ of an IZO monolayer(95nm) was $59.58{\Omega}/{\Box}$. The optical transmittance at 550nm for the IZO(95nm) monolayer is 81.6%, and for the IZO(40)/Ag/IZO(40nm) multilayers with Ag thickness 10, 15 and 20nm, is for 72.8, 78.6, and 63.9%, respectively. The defrost test showed that the film with the lowest RS had the highest heat generation rate (HGR) for the same applied voltage. The results indicated that IZO(40)/Ag(15)/IZO(40nm) multilayer has the best suitable property, which is a promising thin film heater for the application in vehicle windshield.

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Shape Control of Anodic Aluminum Oxide and Effect as Support of Silicon Powder Electrode (양극산화알루미늄의 형상제어와 이를 이용한 실리콘 분말 전극 지지체 효과)

  • Song, Ju-Seok;Ha, Jong-Keun;Kim, Yoo-Young;Park, Dong-Kyu;Ahn, In-Shup;Ahn, Jou-Hyeon;Cho, Kwon-Koo
    • Journal of Powder Materials
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    • v.22 no.4
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    • pp.240-246
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    • 2015
  • Anodic aluminum oxide (AAO) has been widely used for the development and fabrication of nano-powder with various morphologies such as particle, wire, rod, and tube. So far, many researchers have reported about shape control and fabrication of AAO films. However, they have reported on the shape control with different diameter and length of anodic aluminum oxide mainly. We present a combined mild-hard (or hard-mild) anodization to prepare shape-controlled AAO films. Two main parameters which are combination mild-hard (or hard-mild) anodization and run-time of voltage control are applied in this work. The voltages of mild and hard anodization are respectively 40 and 80 V. Anodization was conducted on the aluminum sheet in 0.3 mole oxalic acid at $4^{\circ}C$. AAO films with morphologies of varying interpore distance, branch-shaped pore, diameter-modulated pore and long funnel-shaped pore were fabricated. Those shapes will be able to apply to fabricate novel nano-materials with potential application which is especially a support to prevent volume expansion of inserted active materials, such as metal silicon or tin powder, in lithium ion battery. The silicon powder electrode using an AAO as a support shows outstanding cycle performance as 1003 mAh/g up to 200 cycles.

One-step Purification of Poly-His Tagged Penicillin G Acylase Expressed in E. coli

  • Kim, Jin-Hee;Kang, Hye-Jin;Kim, Eung-Soo;Kim, Jeong-Ho;Koo, Yoon-Mo
    • Journal of Microbiology and Biotechnology
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    • v.14 no.2
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    • pp.231-236
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    • 2004
  • The inexpensive large-scale production of pure PGA (Penicillin G Acylase) has been a commercial goal. PGA has been used as a model enzyme in the development of simple one-step purification methods. In this study, the purification of poly-His tagged PGA protein secreted into the periplasmic space was carried out by using immobilized metal-ion affinity chromatography (IMAC). The PGA gene was obtained from E. coli ATCC 11105. Codons encoding histidines were fused at the C-terminus of the PGA gene by PCR. E. coli JM109 harboring pPGA-HIS6 vector produced active his-tagged acylases in the presence of lac promoter during cultivation at $26^{\circ}C$. The maximum specific activity of the acylase purified by using one-step chromatography after osmotic shock was 38.5 U/mg and was recovered with the yield of 70%. Both 23 kDa ($\alpha$) and 62 kDa ($\beta$) subunits were recovered by using IMAC with just C-terminus tagging of the $\beta$ subunit. The purification of the periplasmic fraction by osmotic shock and that of purified acylase was increased by 2.6-fold and 19-fold, respectively, compared to the crude extract.

${\alpha}$-Galactosidase from Bacillus megaterium VHM1 and Its Application in Removal of Flatulence-Causing Factors from Soymilk

  • Patil, Aravind Goud G.;Kumar S.K., Praveen;Mulimani, Veerappa H.;Veeranagouda, Yaligara;Lee, Kyoung
    • Journal of Microbiology and Biotechnology
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    • v.20 no.11
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    • pp.1546-1554
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    • 2010
  • A bacterial strain capable of producing extracellular ${\alpha}$-galactosidase was isolated from a sample of sugarcane industrial waste. Microbiological, physiological, and biochemical studies revealed that the isolate belonged to Bacillus sp. Furthermore, based on a 16S rDNA sequence analysis, the new isolate was identified as Bacillus megaterium VHM1. The production of ${\alpha}$-galactosidase was optimized based on various physical culture conditions. Guar gum and yeast extract acted as the best carbon and nitrogen sources, respectively. The optimum pH was 7.5 and the enzyme remained stable over a pH range of 5-9. The enzyme was optimally active at $55^{\circ}C$ and thermostable with a half-life of 120 min, yet lost 90% of its residual activity within 120 min at $60^{\circ}C$. One mM concentrations of $Ag^2$, $Cu^2$, and $Hg^{2+}$ strongly inhibited the ${\alpha}$-galactosidase, whereas the metal ions $Fe^2$, $Mn^{2+}$, and $Mg^{2+}$ had no effect on the ${\alpha}$-galactosidase activity, and $Zn^{2+}$, $Ni^{2+}$, and $Ca^{2+}$ reduced the enzyme activity slightly. When treated with the B. megaterium VHM1 enzyme, the flatulence-causing sugars in soymilk were completely hydrolyzed within 1.5 h.

Effects of Al-doping on IZO Thin Film for Transparent TFT

  • Bang, J.H.;Jung, J.H.;Song, P.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.207-207
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    • 2011
  • Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

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The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • Sin, Sae-Yeong;Mun, Yeon-Geon;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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Heterogeneous Catalysts for Hydrogen Generation Based on Ru-Incorporated Hydroxyapatite

  • Jaworski, Justyn Wayne;Kim, Dae-Hyun;Jung, Kyeong-Mun;Kim, So-Hue;Jeong, Jong-Ok;Jeon, Hyo-Sang;Min, Byoung-Koun;Kwon, Ki-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.319-319
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    • 2011
  • Hydrolysis of sodium borohydride provides a safe and clean approach to hydrogen generation. Having the proper catalytic support for controlling this reaction is therefore a valuable technology. Here we demonstrate the capability of hydroxyapatite as a novel catalytic support material for hydrogen generation. Aside from being inexpensive and durable, we reveal that Ru ion exchange on the HAP surface provides a highly active support for sodium borohydride hydrolysis, exemplifying a high total turnover number of nearly 24,000 mol $H_2$/ mol Ru. Moreover, we observe that the RuHAP support exhibits a high catalytic lifetime of approximately one month upon repeated exposure to $NaBH_4$ solutions. In addition to examining surface area effects, we also identified the role of complex surface morphology in enhancing hydrolysis by the catalytic transition metal covered surface. Particularly, we found that a polycrystalline RuHAP catalytic support exhibits shorter induction times for the initial bubble formation as well as increased hydrogen generation rates as compared to a single crystal supports. The independent factor of a complex surface morphology is believed to provide enhanced sites for gas release during the initial stages of the reaction. By demonstrating the ability to shorten induction time and enhance catalytic activity through changes in surface morphology and Ru content, we find it feasible to further explore this catalyst support in the construction of a practical hydrogen generator.

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Preparation of WO3-TiO2 Photocatalyst and Evaluation of Its Photo-activity in the Visible Light Range (가시광 활성 WO3-TiO2 복합체 광촉매의 제조 및 이의 특성 평가)

  • Yeo, In-Chul;Kang, In-Cheol
    • Journal of Powder Materials
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    • v.20 no.6
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    • pp.474-478
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    • 2013
  • The most general photocatalyst, $TiO_2$ and $WO_3$, are acknowledged to be ineffective in range of visible light. Therefore, many efforts have been directed at improving their activity such as: band-gap narrowing with non-metal element doping and making composites with high specific surface area to effectively separate electrons and holes. In this paper, the method was introduced to prepare a photo-active catalyst to visible irradiation by making a mixture with $TiO_2$ and $WO_3$. In the $TiO_2-WO_3$ composite, $WO_3$ absorbs visible light creating excited electrons and holes while some of the excited electrons move to $TiO_2$ and the holes remain in $WO_3$. This charge separation reduces electron-hole recombination resulting in an enhancement of photocatalytic activity. Added Ag plays the role of electron acceptor, retarding the recombination rate of excited electrons and holes. In making a mixture of $TiO_2-WO_3$ composite, the mixing route affects the photocatalytic activity. The planetary ball-mill method is more effective than magnetic stirring route, owing to a more effective dispersion of aggregated powders. The volume ratio of $TiO_2(4)$ and $WO_3(6)$ shows the most effective photocatalytic activity in the range of visible light in the view point of effective separation of electrons and holes.

Solid Acid Catalyzed Formation of ETBE(Ethyl tert-Butyl Ether) as an Octane Enhancer for Gasoline (고체산 촉매에 의한 가솔린 옥탄가 향상제인 ETBE (Ethyl tert-Butyl Ether) 합성)

  • Park, Nam-Cook;Kim, Jae-Seung;Seo, Seong-Gyu;Oh, Young-Yenl
    • Applied Chemistry for Engineering
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    • v.4 no.1
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    • pp.162-170
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    • 1993
  • Vapor-phase ETBE(ethyl tert-butyl ether) synthesis from TBA(tert-butyl alcohol) and ethanol was carried over solid acid catalysts such as heteropoly acids and proton type zeolites. Heteropoly acids were more active than proton type zeolites and $H_4SiW_{12}O_{40}$ catalyst showed about the same activity as Amberlyst-15 ion exchange resin catalyst used as an industrial catalyst in ETBE synthesis. The catalytic activity of transition metal exchanged heteropoly acids was greatly enhanced, because new acid site was generated with hydrogen reduction. This effect of hydrogen reduction was related to the reduction characteristics of catalysts and the order of reducibility was $Ag^+$>$Cu^{2+}$>$Fe^{2+}$.

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