• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1138-1139
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• 2006

The present study has shown that the effect of boron and phosphorus in Ni-Cr-Si-X alloy to interfacial reactions and bonding strength of diamond-steel substrate, and the influence of various construction parameters on the formation of the topography of the tool. And these factors are required to making a good brazed tool. The microstructures and phase change of the brazed region were analyzed into SEM, EDS. According to the electron probe microanalysis, while brazing, the chromium present in the brazing alloy segregated preferentially to the surface of the diamond to form a chromium rich reaction product, which was readily wetted by the alloy.

• 전자공학회논문지A
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• 제30A권12호
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• pp.98-107
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• 1993

This paper describes a design of a multi-bit oversampling noise-shaping D/A converter which achieves a resolution of 12 bits using oversampling technique. In the architecture the essential block which determines the whole accuracy is the analog internal D/A converter, and the designed charge-integration internal D/A converter adopts a differential structure in order to minimize the reduction of the resolution due to process variation. As the proposed circuit is driven by signal clocks which contains the information of the data variation from the noise-shaping coder, it minimizes the disadvantage of a charge-integration circuit in the time axis. In order to verify the circuit, it was integrated with the active area of 950$\times$650${\mu}m^{2}$ in a double metal 1.5-$\mu$m CMOS process, and testified that it can achieve a S/N ratio of 75 dB and a S/(N+D) ratio of 60 dB for the signal bandwidth of 9.6 kHz by the measurement with a spectrum analyzer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.846-849
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• 2009

In this study, we manufactured polymer-LED using light emitting copolymer as the active layer. After cathode layer deposition, we did post-annealing at $150^{\circ}C$ during 10 min in $N_2$ glove box. Then, we confirmed that the efficiency of the device was significantly enhanced by post annealing process. Its value was increased from 0.18(cd/A) to 1.32(cd/A), approximately 7 times. This phenomenon is a result of improved stability between polymer and metal cathode for injection of electrons as the contact density increases.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.730-732
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• 2007

We fabricated a coplanar type organic thin-film transistors using ink-jet printed silver source/drain electrodes and ${\alpha},{\omega}-dihexylquaterthiophene$ (DH4T) which is an active layer. Use of ink-jet printed silver nanoparticle-based metal electrode assists the energetic mismatch with p-type organic semiconductor via modification of their interfacial properties to enable ohmic contact formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

• ETRI Journal
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• 제27권4호
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• pp.449-452
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• 2005

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

• 전자공학회논문지C
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• 제34C권6호
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• pp.58-70
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• 1997

In this paper, an 8bit CMOS low power, high-speed current-mode folding and interpolation A/D converter is designed with te LG semicon $0.8\mu\textrm{m}$ N-well single-poly/double-metal CMOS process to be integrated into a portable image signal processing system such as a digital camcoder. For good linearity and low power consumption, folding amplifiers and for high speed performance of the A/D converter, analog circuitries including folding block, current-mode interpolation circuit and current comparator are designed as a differential-mode. The fabricated 8 bit A/D converter occupies the active chip area of TEX>$2.2mm \times 1.6mm$ and shows DNL of $\pm0.2LSB$, INL of <$\pm0.5LSB$, conversion rate of 40M samples/s, and the measured maximum power dissipation of 33.6mW at single +5V supply voltage.

• International Journal of Advanced Culture Technology
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• 제8권2호
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• pp.283-288
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• 2020

This study investigated the purification process of groundwater contaminated with zinc and arsenic using a permeable reactive barrier with a zero-valent iron/pumice mixture. We determined the removal rates of the contaminants for 30 days. In this study, column reactor filled with the zero-valent iron/pumice reactive mixture was used. Experimental results showed that the mixture exhibited an almost complete removal of the zinc and arsenic ions. Arsenic was removed via co-precipitation and adsorption processes while zinc ions were asorbed in active sites.The purification process of water from the metal ionscontinued for 30 days with constant hydraulic conductivity because of the enhanced porosity of the pumice and interparticle distance between the zero-valent iron and pumice. Contaminants removal rates and the remediation mechanism for each reactive system are described in this paper.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1599-1604
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• 2003

New methods were developed to prepare silver-doped sol-gel films for surface-enhanced Raman spectroscopy (SERS) applications. First, silver ions were doped into a sol-gel matrix. The doped silver ions were reduced into corresponding silver metal particles by two reductive procedures; chemical reduction and thermal reduction. The SERS spectra of benzoic acid were used to demonstrate the SERS effect of the new substrates. The adsorption strength of benzoic acid adsorbed on differently reduced substrates was discussed. The possible adsorption form and the orientation of adsorbate were also discussed.

• Nuclear Engineering and Technology
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• 제32권6호
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• pp.595-604
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• 2000

Flow-Accelerated Corrosion Behavior of SA106 Gr.C steel in room temperature alkaline solution simulating the CANDU primary water condition was studied using Rotating Cylinder Electrode. Systems of RCE were set up and electrochemical parameters were applied at various rotating speeds. Corrosion current density decreased up to pH 10.4 then it increased rapidly at higher pH. This is due to the increasing tendency of cathodic and anodic exchange half-cell current. Corrosion potential shifted slightly upward with rotating velocity. Passive film was formed from pH 9.8 by the mechanism of step oxidation and the subsequent precipitation of ferrous species into hydroxyl compound. Above pH 10.4, the film formation process was active and the film became stable. Corrosion current density showed increment in pH 6.98 with the rotating velocity, while it soon saturated from 1000 rpm above pH 9.8. This seems that activation process which represents formation of passive film on the bare metal surface controls the entire corrosion process