• 분석과학
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• 제28권1호
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• pp.8-16
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• 2015

We prepared a novel electrochemical gas sensor (EG sensor) based on interdigitated electrode (IDE) coated with vinyl ionic liquids (ILs) as electrolyte and Pt-Ru-Mo/MWNT electrocatalysts for occurring redox-active of CNCl gas. The vinyl ILs such as 1-butyl-3-(vinylbenzyl)imidazolium chloride, $[BVBI]^+Cl^-$, and 3-hexyl-1-vinylimidazolium bromide, $[HVI]^+Br^-$, were synthesized by $SN_2$ reaction in order to use electrolyte. The Pt-Ru-Mo/MWNT electrocatalysts were also prepared by one-step radiation-induced reduction of metal ions in the presence of MWNTs as supports. The fabricated EG sensor with vinyl ILs electrolyte was evaluated through optical microscopy (OM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The prepared EG sensor is clearly detected over 2.0 ppm CNCl gas and is exhibited a liner relationship between current and concentration over a region of 10-100 ppm.

• Journal of Life Science
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• 제9권1호
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• pp.64-68
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• 1999

The properties of purified intracellular adenosine deaminase (adenosine aminohydrolase, EC 3.5.4.4) of Nocardioides sp. J-326TK isolated from soil have been studied. The enzyme deaminated adenosine and 2`-deoxyadenosine and the respective {TEX}$K_{M}${/TEX} values were 4.0×{TEX}$10^{-4}${/TEX} M and 5.0× {TEX}$10^{-4}${/TEX} M, but the enzyme was not active on 8-bromoadenosine, 6-methylaminopurine riboside, ATP, ADP, 2`-AMP, 3`-AMP, 5`-AMP, dAMP, cAMP, NAD, FAD, NADP and adenine. The enzyme activity was strongly inhibited by the addition of {TEX}$Hg^{2+}${/TEX} and {TEX}$Ag^{+}${/TEX}, {TEX}$Cu^{2+}${/TEX}, {TEX}$Co^{2+}${/TEX} and {TEX}$Mn^{2+}${/TEX} also inhibited the activity but much less extent. The effect of alkyl reagents, metal chelating reagents and certain other compounds on the enzyme activity were also examined. No reagent activated the enzyme. On the contrary, the enzyme reaction was slightly inhibited by o-phenanthroline and 6-benzyladenosine.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.487-494
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• 2000

This paper describes the design, fabrication and experiments of surface-micromachined aluminum micromirror array with hidden pin-joints. Instead of the conventional elastic spring components as connection between mirror plate and supporting structure, we used pin-joint composed of pin and staples to support the mirror plate. The placement of pin-joint under the mirror plate makes large active surface area possible. These flexureless micromirrors are driven by electrostatic force. As the mirror plate has discrete deflection angles, the device can be ap;lied to adaptive optics and digitally-operating optical applications. Four-level metal structural layers and semi-cured photoresist sacrificial layers were used in the fabrication process and sacrificial layers were removed by oxygen plasma ashing. Static characteristics of fabricated samples were measured and compared with modeling results.

• Journal of Electrical Engineering and information Science
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• 제2권4호
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• pp.14-18
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• 1997

A design methodology of the analog current-mode and width programmable integrator for a low voltage (3V) and low power application is developed and the integrator designed by this method is successfully fabricated by the 0.8$\mu\textrm{m}$ CMOS n-well single poly/double metal standard digital process. The integrator occupies the active chip area of 0.3$\textrm{mm}^2$. The experimental result illustrates a low power dissipation (1.0mW∼3.55 mW), 65dB of the dynamic range, and digitally and width programmability (10MHz∼30MHz) with an external digital 4 bit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.187-190
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• 1996

Conducting polymers have band structures similar to those of inorganic semiconductors such as silicon. Several electronic devices have been constructed with conjugated polymers, mainly Schottky diodes and Metal-Insulator-Semiconductor Field-Effect Transistors (MISFET's). Organic semiconductor has been reported as active materials in MISFET's.$^{1.4}$ In our laboratory, $\alpha$-Sexithiencyl ($\alpha$-6T) has been synthesized and purified by sublimation method. In this study, thin films of $\alpha$-Sexithienyl were prepared on various substrates in ultra-high vacuum chamber by vacuum evaporation method, so called OMBD(Organic Molocular Beam Deposition).$^{7.9}$ The $\alpha$-Sexithienyl thin films were deposited with various deposition conditions. The crystalline structure, and molecular orientation of these films have being studied by using UV/Vis. spectroscopy and X-Ray Diffractometry.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.444-447
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• 2002

The Jig cells are fabricated in the drying room, and consisted of elemental sulfur used as a cathode active material, lithium metal used as a anode material and 1M $LiCF_{3}SO_{3}$ dissolved in TG (Tetraglyme)/DIOX (1,3-Dioxolane) used as a electrolyte. The four kinds of electrolytes with different content of TG and DIOX are prepared. The electrochemical properties of the foregoing electrolytes-based lithium sulfur batteries are analyzed by AC impedance experiments. The conductivity of four different electrolytes is investigated. The conductivity of electrolyte [1M $LiCF_3SO_3$ dissolved in TG/DIOX (50:50, vol.)] is higher than that of other three kinds of electrolytes with different volume ratio (70:30, 30:70) and single solvent (TG).

• Bulletin of the Korean Chemical Society
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• 제31권1호
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• pp.100-103
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• 2010

In this study, NO reduction behaviors of copper-loaded mesoporous molecular sieves (Cu/MCM-41) have been investigated. The Cu loading on MCM-41 surfaces was accomplished by a chemical reduction method with different Cu contents (5, 10, 20, and 40%). $N_2/77$ K adsorption isotherm characteristics, including the specific surface area and pore volume, were studied by BET's equation. NO reduction behaviors were confirmed by a gas chromatography. From the experimental results, the Cu loading amount on MCM-41 led to the increase of NO reduction efficiency in spite of decreasing the specific surface area of catalysts. This result indicates that highly ordered porous structure in the MCM-41 and the presence of active metal particles lead the synergistical NO reduction reactions due to the increase in adsorption energy of MCM-41 surfaces by the Cu particles.

• Journal of Welding and Joining
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• 제16권2호
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• pp.40-47
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• 1998

In the present study, depressions of the GMA weld pool due to the impact of droplet are numerically investigated. The numerical simulation is conducted on the basis of the Navier-Stokes equation and the volume of fluid(VOF) functions. The kinetic energy of transferring droplet makes a depression of the weld pool surface. The surface active element affects the depression of the weld pool. The droplets transferred efficiently to the bottom of the weld pool, along with electromagnetic force make the finger shape penetration at the high current GMAW.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.