• Journal of the Korean Ceramic Society
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• 제53권5호
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• pp.478-482
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• 2016

Metal-supported SOFCs have been investigated to overcome the disadvantages of ceramic-supported SOFCs, including issues related to mechanical strength and sealing. In the case of ceramic-supported cells, the mechanical support is a brittle ceramic or cermet, and it contains expensive materials. However, metal-supported cells utilize ceramic layers that are only as thick as necessary for electrochemical functioning, thereby compensating for the disadvantages of ceramic-supported cells. The mechanical support is fabricated from inexpensive and robust metals, and the electrochemically active layers are applied directly to the metal support. The metal-supported SOFCs thus can provide a reduced system cost, ease of manufacturing, and operational advantages. Owing to these features, metal-supported SOFCs are a very promising candidate for commercialization. Given the importance of studying worldwide trends in metal-supported SOFC research for performance evaluation, this paper reviews development trends with a focus on fabrication methods. Furthermore, a novel fabrication method developed in KAIST is discussed.

• Applied Chemistry for Engineering
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• 제30권4호
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• pp.460-465
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• 2019

In this study, the optimization of active materials and the preparation of particulate adsorbents for the application of metal oxide-based adsorbents for the treatment of $H_2S$, an air pollutant and odorant, occurred in various industrial facilities were investigated. The adsorbents were prepared by using $TiO_2$, which has a high physicochemical stability and relatively high specific surface area among metal oxides and also by different kinds and contents of active materials. The correlation between the physicochemical property and adsorption performance of the adsorbents confirmed that the adsorbent containing KI, which is a typical alkali metal among the active metals, showed the highest adsorption performance. The relationship between the contents and the adsorption performance was non-proportional, but a volcano plot. From XRD, SEM and BET analyses, it was confirmed that the active material was exposed to the surface above a certain amount and also the adsorption performance was the best when the specific surface area and pore volume were $40{\sim}100m^2/g$ and $0.1{\sim}0.3cm^3/g$, respectively. For practical application, the adsorbent was granulated or coated on a ceramic support. It was also confirmed that the adsorbent showed high adsorption performance when the adsorbent was coated on the ceramic rather than that of the granulated support.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1081-1081
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• 2002

Top emission organic EL devices were fabricated by using metal-doped cathode interface layer to achieve low drive voltages. Also, facing-targets-type sputtering was used to sputter indium-tin oxide layer on top of organic active layer. The devices fabricated in this study showed reasonably high external quantum efficiency of about 1 % which is comparable to that of bottom-emission-type devices.

• Proceedings of the Korean Society of Life Science Conference
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• 한국생명과학회 2002년도 제37회 국제학술심포지움 및 추계학술대회
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• pp.87-87
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• 2002

• Proceedings of the KWS Conference
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.57-59
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• 2005

• Journal of Welding and Joining
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• 제9권4호
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• pp.17-27
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• 1991

The direct brazing technology which could be used for the simplification of brazing process and the improvement of brazed joint quality was studied with $Al_2O_3$ and stainless steels. The brazing of $Al_2O_3$ to STS304 or STS430 was performed under different brazing conditions such as brazing filler metal, temperature, heating rate and brazing time. Microstructural observation and chemical analysis be SEM/EPAM were carried out to verify the quality of brazed joints. 4-point bending strength of brazed joints was also measured to find the optimal brazing conditions. The results showed that, in brazing of $Al_2O_3$, the mixed oxide layer resulted from the reaction between Ti in filler metal and oxide layer on the material surface to be brazed was found to be bery important for the joint quality. The width of oxide layer varied with the brazing conditions such as brazing time, heating rate and chemical composition of filler metals. The strength of brazed joints was more affected by the type of materials and their thermal properties than by brazing heat cycle.

• Journal of the Korean Institute of Telematics and Electronics
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• 제22권6호
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• pp.7-12
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• 1985

The transmittances of active metal(Al), transition metals (Cr, Ti, Mn, Ni), and nobel metal(Cu) thin films were investigated. At the pressure range of $6{\times}10^{-5}$ mbr and evapora-tion rate of 0.5 -2A/sec, the metals were evaporated with $85{\AA}$ thickness or so on the slide G1ass. We found that the evaporation rates and vacuum levels strongly influence on the optical properties of thin metal films by the reaction with oxygen. Especially, the transmittances of the metals (Al, Cr, Ti, Mn, Ni) with strong oxygen affinity were able to be enhanced by the evaporating processes of low vacuum level or low evaporating rate.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.901-906
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• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• Current Optics and Photonics
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• 제1권4호
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• pp.358-363
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• 2017

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.