• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.32-36
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.218-221
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. In this study we have investigated a structure to reduce the on-resistance characteristics of the MOSFET. We have a proposed MOSFET structure of active cells region buried under the gate pad. The measurement are carried out with a EDS to analyze electrical characteristics, and the proposed MOSFET are compared with the conventional MOSFET. The result of proposed MOSFET was 1.68[${\Omega}$], showing 10% improvement compared to the conventional MOSFET at 700[V].

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.2 no.1
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• pp.9-16
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• 2016

Carbon-11 is one of the most sensitive and desirable positron emission tomography radio-isotope, which offers the capacity to be incorporated, through a covalent bond, into biologically active molecules without altering their biological properties. Carbon-11 can be obtained from the cyclotron with two different chemical forms: $[^{11}C]CO_2$ and $[^{11}C]CH_4$. [$^{11}C$]Methyl iodide has been widely used as a highly reactive labelling precursor that can be applied to label carbon-11 with biologically active molecules via alkylation of N-, O-, or S-nucleophiles. A more recent and still challenging labeling method is transition metal mediated $^{11}C$-carbonylation. Advances in organic chemistry, radiochemistry and improved automated techniques greatly encourage researchers to develop more carbon-11 labelled radiotracers for molecular imaging studies. This mini-review will introduce a historical track of carbon-11 chemistry combining with examples and its role in near future.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.12
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• pp.80-86
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• 2020

With the exception of welding activities, it is forbidden to use electricity in shipyards, owing to safety concerns such as the possibility of fire, explosions, and short circuits. In this paper, an automatic chamfering machine using pneumatics is proposed for use in such environments. Customers specify their requirements and the machine derives the corresponding theoretical design conditions. The proposed machine was used to perform 3D modeling, and its suitability and performance were confirmed via cutting experiments of the manufactured device. Two types of sensors may be used in this system: contact and non-contact. In the case of the contact type, an end-stop switch that can recognize the end of the material is installed, and when the machine reaches the end of the material, the end-stop switch is operated to cut off the air pressure. In the non-contact type, four sensors were used: photonic, ultrasonic, metal detection, and encoder. The use of the four sensors was repeated 30 times, and the average error determined. Thus, the optimum sensor was identified.

• Journal of Radiation Industry
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• v.18 no.1
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• pp.9-14
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• 2024

In order to thoroughly verify the denuclearization of the Korean Peninsula, it is urgent to develop technology capabilities to monitor, detect, collect, analyze, interpret, and evaluate nuclear activities using nuclear materials and secure nuclear transparency. The IAEA is actively using seal technology to maximize the efficiency of safety measures, and currently uses metal cap, paper, COBRA, and EOSS as seal devices. Unlike facilities that comply with safety measures requirements, such as domestic nuclear facilities, facilities subject to denuclearization are likely to have various risk environments that make it difficult to apply safety measures, and there is a high possibility that continuity of knowledge (COK) such as damage, malfunction, and power loss will not be maintained. This study aims to develop a real-time active seal device that can be applied in such special situations to enable immediate response in the event of a similar situation. To this end, the main functions of the real-time seal device were derived and applied, and a commercialized seal device and operation software. The real-time seal technology developed through this study can be applied to all nuclear facilities in South Korea, especially used as storage equipment for dry cask storage facilities of heavy water reactor's after fuel, and it is believed that unnecessary radiation exposure by inspectors can be minimized.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.29 no.1
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• pp.15-25
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• 2023

Since the COVID-19 crisis, the use of disposable packaging materials and delivery services, which raise environmental and social issues with waste disposal, has significantly increased. Antimicrobial active packaging has emerged as a viable solution for extending the shelf-life of foods by minimizing microbial growth and decomposition. In this review article, we provide a comprehensive overview of current research trends in antimicrobial active film and coating published over the last five years. First, we introduced various polymer materials such as film and coating that are used in active packaging. Next, various types of antimicrobial (antibacterial, antifungal, and antiviral) packaging including essential oil, extracts, biological material, metal, and nanoparticles were introduced and their activities and mechanisms were discussed. Finally, the current challenges and prospects were discussed. Overall, this review provides insights into the recent advancements in antimicrobial active packaging research and highlights the potential of the technology to enhance food safety and quality.

• Journal of the Korean Chemical Society
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• v.59 no.3
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• pp.215-224
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• 2015

Unsymmetrical tetradentate Schiff base N-(2-hydroxy-5-methylacetophenone)-N'-(2-hydroxy acetophenone) ethylene diamine (H₂L) and its complexes with Cr(III), Mn(II), Fe(III), Co(II), Ni(II) and Cu(II) have been synthesized and characterized by elemental analyses, magnetic susceptibility measurements, IR, electronic spectra and thermogravimetric analyses. ¹H, ¹³C-NMR and FAB Mass spectra of ligand clearly indicate the presence of OH and azomethine groups. Elemental analyses of the complexes indicate that the metal to ligand ratio is 1:1 in all complexes. Infrared spectra of complexes indicate a dibasic quadridentate nature of the ligand and its coordination to metal ions through phenolic oxygen and azomethine nitrogen atoms. The thermal behavior of these complexes showed the loss of lattice water in the first step followed by decomposition of the ligand in subsequent steps. The thermal data have also been analyzed for the kinetic parameters by using Horowitz-Metzger method. The dependence of the electrical conductivity on the temperature has been studied over the temperature range 313-403 K and the complexes are found to show semiconducting behavior. XRD and SEM images of some representative complexes have been recorded. The antimicrobial activity of the ligand and its complexes has been screened against various microorganisms and all of them were found to be active against the test organisms. The Fe(III) and Ni(II) complex have been tested for the catalytic oxidation of styrene.