• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.

• ETRI Journal
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• v.34 no.5
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• pp.727-733
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• 2012

This paper demonstrates a new driving scheme that allows reducing the supply voltage of data drivers for low-power active matrix organic light-emitting diode (AMOLED) displays. The proposed technique drives down the data voltage range by 50%, which subsequently diminishes in the peak power consumption of data drivers at the full white pattern by 75%. Because the gate voltage of a driving thin film transistor covers the same range as a conventional driving scheme by means of a level-shifting scheme, the low-data supply scheme achieves the equivalent dynamic range of OLED currents. The average power consumption of data drivers is reduced by 60% over 24 test images, and power consumption is kept below 25%.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.620-622
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• 2005

DuPont Teijin Films (DTF) have developed a family of films engineered specifically for the flexible electronics market. $Teonex^{(R)}Q65A$ is a biaxially oriented crystalline polyester with an engineered surface and it is emerging as a competitive material for the base substrate in OLED displays and active matrix backplanes. This contribution will describe the properties of this film, its uniquely different property set compared to amorphous high performance films and discuss examples of the film in use in flexible electronic applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.236-240
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• 2005

The commercialization of an active matrix e-reader display using E Ink microencapsulated electrophoretic (MEP) ink marked a big step towards comfortable reading over an extended period of time in an electronic book, as the high resolution display, jointly realized by Philips, E Ink and Toppan, has a true paper-like look and feel. Alternative electrophoretic material systems are being developed by SiPix and Bridgestone and progress has been made in the past two years. In this paper, electrophoretic material systems are briefly reviewed, after which the perspectives and challenges of electrophoretic displays are addressed and methods for generating gray tones are presented and discussed.

• Journal of the Optical Society of Korea
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• v.20 no.5
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• pp.586-592
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• 2016

This paper proposes a luminance compensation method using optical sensors to achieve high luminance uniformity of active matrix organic light-emitting diode (AMOLED) displays. The proposed method compensates for the non-uniformity of luminance by capturing the luminance of entire pixels and extracting the characteristic parameters. Data modulation using the extracted characteristic parameters is performed to improve luminance uniformity. In addition, memory size is optimized by selecting an optimal bit depth of the extracted characteristic parameters according to the trade-off between the required memory size and luminance uniformity. To verify the proposed compensation method with the optimized memory size, a 40-inch 1920×1080 AMOLED display with a target maximum luminance of 350 cd/m² is used. The proposed compensation method considering a 4σ range of luminance reduces luminance error from ± 38.64%, ± 36.32%, and ± 43.12% to ± 2.68%, ± 2.64%, and ± 2.76% for red, green, and blue colors, respectively. The optimal bit depth of each characteristic parameter is 6-bit and the total required memory size to achieve high luminance uniformity is 74.6 Mbits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.351-359
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• 2015

Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.17-22
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• 2004

We developed a new ANGLED display driving method which used both amplitude and pulse width modulation. For pulse width modulation, we divided a picture frame time into S sub-frames. For amplitude modulation, we used three OLED luminance(or current) levels which were controlled by TFT's gate voltages. By combining these two modulation methods, we obtained 35(=243) grey levels. And we designed a new data electrode driving circuit block with two shift registers without using DAC's. To verify the feasibility, we simulated the key circuit components by HSpice with TFT parameters extracted from current-voltage characteristics of 6${\mu}{\textrm}{m}$ channel length polysilicon TFT's. From the simulation results, we found that 320${\times}$240, dual scan, 243 grey level AMOLED display can be designed with this method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.785-786
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• 2017

Recently, interest in AMOLED (Active Matrix OLED) panels has been growing with the development of displays used in each device. Therefore, the demand for the inspection equipment required for production is spreading, and therefore, efficient design is required to operate a plurality of signal generators. In this paper, we propose a central server management system for signal generators. The proposed system includes a method for driving an AMOLED panel, and the timing and power setting results are presented. Thus, it is possible to cope with loss or alteration of data, and it is believed that stable and smooth communication is possible.

• Journal of Applied Reliability
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• v.9 no.2
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• pp.131-148
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• 2009

An organic light emitting diode (OLED), also light emitting polymer (LEP) and organic electro luminescence (OEL), is any light emitting diode (LED) whose emissive electroluminescent layer is composed of a film of organic compounds. The layer usually contains a polymer substance that allows suitable organic compounds to be deposited. They are deposited in rows and columns onto a flat carrier by a simple "printing" process. The resulting matrix of pixels can emit light of different colors. Such systems can be used in television screens, computer displays, small, portable system screens such as cell phones and PDAs, advertising, information and indication. OLEDs can also be used in light sources for general space illumination, and large-area light-emitting elements. In this paper, we develop the general guide line of the accelerated life test for assuring B10 life of AMOLED(Active Matrix Organic Light Emitting Diode) and PMOLED(Passive Matrix Organic Light Emitting Diode) which are widely used for display monitor less than 115 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.