• Journal of the Korean Society for Heat Treatment
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• v.14 no.3
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.280-286
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• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

• Electrical & Electronic Materials
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• v.5 no.4
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• pp.400-405
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• 1992

활성화 반응성 증착법으로 비저항 1.7*$10^{-3}$-8.0*$10^{-3}$ohm.cm, 전하운반자 농도 3.4*$10^{19}$-2.8*$10^{20}$$cm^{-3}$, 이동도 12-23$cm^{2}$/V.s, 금지대역 폭 3.35eV인 In/sib 2/ $O_{3}$박막을 KBr과 실리카 기판에 성장시켰다. 광투과율은 가시광선 영역에서 80% 이상을 나타냈으며 적외선 영역에서도 양호한 특성을 나타냈다. 박막성장시는 비정질 상태였으나 150.deg.C 이상에서 열처리했을 때 결정화현상이 관찰되었다.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.467-471
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• 1999

BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of $sp^2$ bond of BN decreased and that of $sp^3$ bond of c-BN increased with increasing pulsed DC bias voltage applied to substrate. The initially grown layer at the interface was observed by TEM and considered to be of$ sp^2$-bonded BN. The cross-sectional and planar TEM micrographs show that the upper layer on the initial layer was the single phase c-BN. It is concluded that cubic boron nitride films could be synthesized by ME-ARE process with pulsed DC biasing.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.27 no.3
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• pp.144-157
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• 2022

Noble gases, which are chemically inert and behave conservatively in marine environments, have been used as tracers of physical processes such as air-sea gas exchange, mixing of water masses, and distribution of glacial meltwater in the ocean. For precise measurements of Ne, Ar, and Kr, we developed a mass spectrometric system consisting of a quadrupole mass spectrometer (QMS), a high vacuum preparation line, an activated charcoal cryogenic trap (ACC), and a set of isotope standard gases. The high vacuum line consists of three sections: (1) a sample extraction section that extracts the dissolved gases in the sample and mixes them with the standard gases, (2) a gas preparation section that removes reactive gases using getters and separates the noble gases according to their evaporation points with the ACC, and (3) a gas analysis section that measures concentrations of each noble gas. The ACC attached to the gas preparation section markedly lowered the partial pressures of Ar and CO₂ in the QMS, which resulted in a reduced uncertainty of Ne isotope analysis. The isotope standard gases were prepared by mixing ²²Ne, ³⁶Ar, and ⁸⁶Kr. The amounts of each element in the mixed standard gases were determined by the reverse isotope dilution method with repeated measurements of the atmosphere. The analytical system achieved precisions for Ne, Ar, and Kr concentrations of 0.7%, 0.7%, and 0.4%, respectively. The accuracies confirmed by the analyses of air-equilibrated water were 0.5%, 1.0%, and 1.7% for Ne, Ar, and Kr, respectively.