• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.909-910
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.941-942
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• 2008

• Journal of Electrical Engineering and Technology
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• 제11권5호
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• pp.1377-1382
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• 2016

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.262-270
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• 2004

Basic experiments were carried out using the THT-IV low-power Hall thruster to examine the influences of magnetic field shape and strength, and acceleration channel length on thruster performance and to establish guidelines for design of high-performance Hall thrusters. Thrusts were measured with varying magnetic field and channel structure. Exhaust plasma diagnostic measurement was also made to evaluate plume divergent angles and voltage utilization efficiencies. Ion current spatial profiles were measured with a Faraday cup, and ion energy distribution functions were estimated from data with a retarding potential analyzer. The thruster was stably operated with a highest performance under an optimum acceleration channel length of 20 mm and an optimum magnetic field with a maximum strength of about 150 Gauss near the channel exit and with some shape considering ion acceleration directions. Accordingly, an optimum magnetic field and channel structure is considered to exist under an operational condition, related to inner physical phenomena of plasma production, ion acceleration and exhaust plasma feature. A new Hall thruster was designed with basic research data of the THT-IV thruster. With the thruster with many considerations, long stable operations were achieved. In all experiments at 200-400 V with 1.5-3 mg/s, the thrust and the specific impulse ranged from 15 to 70 mN and from 1100 to 2300 see, respectively, in a low electric power range of 300~1300 W. The thrust efficiency reached 55 %. Hence, a large map of the thruster performance was successfully made. The thermal characteristics were also examined with data of both measured and calculated temperatures in the thruster body. Thermally safe conditions were achieved with all input powers.

• 한국정보전자통신기술학회논문지
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• 제12권5호
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• pp.529-536
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• 2019

본 논문에서는 회전체의 특징 파라미터들을 추출하기 위한 센서의 신호들을 수집하여 추출기법의 성능을 분석하고자 한다. 이를 위해, 모형 시험을 수행하기 위한 진동 테스트 리그를 개발하여 정상적으로 운전하에서의 신호특성을 분석하였다. 그 결과, 가속도 센서에서 측정한 불평형 질량에 따른 가속도 센서에서 측정된 원 데이터 진폭의 변화는 나타나지 않는 것으로 판단된다. FFT를 수행하여 불평형량이 증가함에 따라 회전 주파수인 20Hz의 진폭이 크게 증가하는 것을 알 수 있었다. 속도 센서의 불평형량 변화에 따른 분석결과도 가속도 센서와 같이 1X 하모닉 성분이 크게 증가하였다.정렬불량의 변화시 가속도 센서 데이터에는 특별한 진폭의 변화가 없었으며, Envelope 데이터의 경우 2X(40Hz)의 진폭이 정렬불량의 정도에 따라 증가되었다. 정렬불량의 변화시 속도 센서도 가속도 센서와 유사한 결과를 보였으며 주파수 스펙트럼에서 부하의 증가에 따라 600Hz에서 피크가 감소되었다.

• 한국진공학회지
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• 제11권3호
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• pp.151-158
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• 2002

Decaborane ($B_{10}H_{14}$) 이온 주입법으로 n-type Si (100) 기판에 ultra-shallow $p^{+}-n$ 접합을 형성시켰다. 이온 주입에너지는 5kV와 10kV, 이온 선량은 $1\times10^{12}\textrm{cm}^2$와 $1\times10^{13}\textrm{cm}^2$로 decaborane을 이온 주입시켰다. 이온 주입된 시료들은 $N_2$ 분위기에서 $800^\{\circ}C$, $900^{\circ}C$, $1000^{\circ}C$에서 10초 동안 RTA(Rapid Thermal Annealing) 처리를 하였다. 또한 가속에너지에 따른 결함을 확인하기 위해서 15 kV의 이온 주입 에너지에서 $1\times10^{14}\textrm{cm}^2$만큼 이온 주입하였다. 2 MeV $^4He^{2+}$ channeling spectra에서 15 kV로 주입된 시료가 bare n-type Si와 5 kV, 10 kV의 에너지로 주입된 시료보다 주입시 생긴 결함에 의해 backscattering yield가 더 높게 나타났으며 spectra로부터 얻은 이온 주입으로 인한 비정질층의 두께는 표면으로부터 가속전압이 5kV, 10kV, 15kV일 때 각각 1.9nm, 2.5nm, 4.3nm였다. 10 kV에서 이온 주입된 시료를 $800^{\circ}C$ 열처리 한 결과 결함의 회복으로 인해 bare Si와 비슷한 backscattering yield를 보였으며 이때의 계산된 비정질 층의 두께는 0.98 nm이었다. 홀 측정과 면저항 측정은 dopant의 활성화가 주입된 에너지, 이온 선량, 열처리 온도에 따라 증가함을 보여주었다. I-V 측정 결과 누설 전류 밀도는 열처리 온도가 $800^{\circ}C$에서 $1000^{\circ}C$까지 증가함에 따라 감소하였고 주입에너지가 5kV에서 10kV까지 증가함에 따라 증가하였다.

• 센서학회지
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• 제24권3호
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• pp.169-174
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• 2015

In this study, we developed a system to detect the various defects in the metallic objects using the phenomenon that the defects cause the changes of the natural resonant frequencies. Our system consists of a FFT Amp, an Auto Impact Hammer, a Hammer controller and a PC. Auto Impact Hammer creates vibrations in the metallic objects when tapped on the surface. These vibrational signals are converted to the voltage signals by an acceleration sensor attached to the metallic part surface. These analog voltage signals were fed into an ADC (analog-digital converter) and an FFT (fast fourier transform) conversion in the FFT Amp to obtain the digital data in the frequency domain. Labview graphical program was used to process the digital data from th FFT amp to display the spectrum. We compared those spectra with the standard spectrum to find the shifts in the resonant frequencies of the metal parts, and thus detecting the defects. We used PCB's acceleration sensor and TI's TMS320F28335 DSP (digital signal processor) to obtain the resolution of 2.93 Hz and to analyze the frequencies up to 44 kHz.

• 대한전기학회논문지
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• 제43권5호
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.216-226
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• 2015

The neutral beam injection generate ultra-high temperature energy in the tokamak of nuclear fusion. The neutral beam injection make up arc power supply, filament power supply and acceleration & deceleration power supply. The arc power supply has characteristics of low voltage and high current. Arc power supply generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The proposed buck converter used parallel switch because it can be increased capacity and decrease conduction loss. When an arc generated, the neutral beam injection chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus the proposed converter should be designed for the characteristics of low voltage and high current. Also, the arc power supply should be guaranteed for system stability. The proposed parallel buck converter enables the system stability of the divided low output voltage and high current. The proposed converter with constant output be the most important design of the output inductor. In this paper, designed arc power supply verified operation of system and stability through simulation and prototype. After it is applied to the 288[kW] arc power supply for neutral beam injection.

• Journal of Electrical Engineering and information Science
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• 제2권4호
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• pp.66-71
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• 1997

The dielectrophoretic(DEP) force acting on a cell in an electric field is experimentally determined. A cell is accelerated by the DEP force in an electric field generated between micro planar electrodes. the position of the cell is measured and the velocity and acceleration of the cell are calculated based on the measured position data. The DE force is determined from the motion equation of a moving cell in suspension. The electrode structure is fabricated by micromachining technology and the height of electrodes is 1 $\mu\textrm{m}$. Radish cell and yeast are used in th experiments. In the case of radish cell, the DEP force increases as voltage or frequency(1MHz∼3MHz) increases. The voltage dependence can be explained that the DEP force increases when ▽│E│$^2$increases. The frequency dependence means that Re[x\ulcorner] of radish cell is maximized in a certain frequency. In the case of yeast, the DEP force increases only as voltage increases. The reason for the voltage dependence is the same with the case of radish. The DEP force increases only as voltage increases. The reason for the voltage dependence is the same with the case of radish. The DEP force on a yeast does not vary when the frequency varies from 1MHz to 3MHz. This result coincides with the fact that the value of calculated Re[x\ulcorner] is constant in the test frequency range.