• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.7
• /
• pp.1285-1290
• /
• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.361-366
• /
• 2011

An in-situ, real-time monitoring of GaN epilayers grown by low pressure metalorganic chemical vapor deposition system modified for spectral reflectance was performed. Reflectance spectrums from 190~861 nm were observed using p-polarized light with incident angle of $75^{\circ}$. All reflectance spectrums showed interference oscillation caused by multiple reflection within GaN epilayers, and the spectrum from GaN with low crystalline quality showed weak reflectance intensity and much low amplitude of the oscillation because many defects in GaN resulted in light scattering and absorption. Signal variation of reflected light which was selected around strong constructive wavelength range was also observed during $NH_3$ supplying and $NH_3$ cut-off. There was no significant change in signal intensity when $NH_3$ cut-off for 10 sec, but it showed higher intensity when $NH_3$ was cut off for over 30 sec and its intensity kept unchanged. This result indicates that GaN surface was N-terminated during $NH_3$ supplying but Ga-terminated during $NH_3$ cut-off because of high nitrogen equilibrium vapor pressure of GaN, and metallic Ga-terminated surface caused slightly higher reflectance intensity.

• Journal of the Society of Cosmetic Scientists of Korea
• /
• v.40 no.4
• /
• pp.359-364
• /
• 2014

In this study, we developed a HPLC method for the separation and analysis of methylparaben and p-anisic acid, which are commonly used as a synthetic preservative and natural preservative, respectively. Methylparaben and p-anisic acid have same molecular weight (152.15 g/mol), similar structure and same maximum absorption wavelength (250 nm), thus they showed same retention time (RT) value (13.3 min) in HPLC experiment. We observed that two substances are separated on C18 column after methylparaben was derivatized selectively through the acetylation reaction. Instead, RT of the acetylated methylparaben was moved to 23.9 min from 13.3 min. The average retention time was $23.9{\pm}0.1min$ and peak area values was $5042882{\pm}4778$. In addition it showed a high linearity in the calibration curve with a correlation coefficient (R2) of 0.9999658. Detection and quantitation limits were $1.47{\mu}g/mL$ and $4.44{\mu}g/mL$, respectively. In conclusion, the developed method can be useful for separation and analysis of preservatives with similar structure in cosmetic fields.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.10
• /
• pp.671-677
• /
• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Journal of the Korean Applied Science and Technology
• /
• v.37 no.5
• /
• pp.1138-1150
• /
• 2020

In this study, an experiment was conducted to develop a sunscreen with antioxidant effects by simultaneously investigating the antioxidant and UV protection capabilities of various plant extracts. First, to investigate the UV-blocking ability of 33 kinds of plant extracts, the absorbance spectrum between the UV wavelength of 280 to 400 nm was investigated. Arrowroot, graviola, wheat sprout, sangbaek skin, thorn meal, lacquer, etc. 11 species were selected. The total polyphenol content, total flavonoid content, and DPPH radical scavenging activity of the selected plant extracts are measured to examine the degree of antioxidant activity, and from this, it is a plant extract that has excellent UV protection and antioxidant activity at the same time. The species was selected. A gel-shaped cream is prepared by mixing the selected gold, hops, and licorice extracts in a ratio of 1:1:1, and the UV protection effect of this cream is measured when the cultured cells are irradiated with UV rays. Determined by the method. As a result of the study, it was confirmed that the selected mixture of plant extracts complemented each other in terms of ultraviolet absorption ability and increased cell damage protection effect. Through these results, it was confirmed that it was possible to develop a sunscreen with an antioxidant effect if the antioxidant and sunscreen capabilities of various plant extracts were determined at the same time.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.324-325
• /
• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Journal of Sensor Science and Technology
• /
• v.9 no.5
• /
• pp.341-349
• /
• 2000

CsI(Br) single crystals doped with 1, 3, 5 or 10 mole% $Br^-$ ions, as an activator, were grown by Czochralski method. The lattice structure of grown CsI(Br) single crystal was bcc and its lattice constant was $4.568\;{\AA}$. The absorption edge of the CsI(Br) single crystals was observed at 243 nm. The spectral range of the luminescence excited by 243 nm of wavelength was $300{\sim}600\;nm$, and its peak emission appeared at 440 nm. The luminescence intensity was maximum when CsI(Br) was doped with 3 mole % $Br^-$ ions. The energy resolutions of the CsI(Br) scintillator doped with 3 mole % $Br^-$ ions were 15.0% for $^{137}Cs$(662 keV), 13.1% for $^{54}Mn$(835 keV), and 18.0% and 6.3% for $^{22}Na$(511 keV and 1275 keV), respectively. The decay curves had fast and slow components, and the fast component was about 41 ns independent on the concentration of the $Br^-$ ions. The time resolution of CsI(Br) scintillators decreased with increasing of the concentration of $Br^-$ ions.

• Applied Chemistry for Engineering
• /
• v.25 no.6
• /
• pp.624-631
• /
• 2014

In this study, a new series of conjugated polymer 3-(5-(5,6-bis(octyloxy)-7-(thiophen-2-yl)benzo[c][1,2,5]thiadiazol-4-yl)thiophen-2-yl)-10-(4-(octyloxy)phenyl)-10H-phenothiazine (P1) and 3-(5-(5,6-bis(octyloxy)-7-(thiophen-2-yl)benzo[c][1,2,5]thiadiazol-4-yl)thiophen-2-yl)-10-(4-((2-ethylhexyl)oxy)phenyl)-10H-phenothiazine (P2) were synthesised and organic photovoltaics (OPVs) properties were characterized. The push-pull structure polymer consisted of phenothiazine derivative as an electron donor and benzothiadiazole derivative as an electron acceptor. The aliphatic chain substituted aromatic ring was substituted at the position of N in phenothiazine for the electron-rich and improved solubility. Excellent thermal stabilities of P1 and P2 were confirmed by measured Td values as 321.9 and $323.7^{\circ}C$, respectively and the degrees of polymerization were 4,911 (P1) and 5,294 (P2). The maximum absorption wavelength of P1 and P2 were 549 and 566 nm, respectively. The device was fabricated and the OPVs property was measured. As a result, the power efficiency of conversion for P1 and P2 were 0.96 and 0.90%, respectively.

• Analytical Science and Technology
• /
• v.18 no.3
• /
• pp.194-200
• /
• 2005

The N hyperfine coupling constants ($a_N$) of di-t-butyl nitroxide (DTBN) radicals in water-solvent system were measured with EPR spectroscopy. Various kinds of the solvents with different polarity such as acetone, dimethylsulfoxide (DMSO), methanol, ethanol and 1-propanol were applied and studied. Equilibrium constants for the solvation equilibrium and the solvent parameters ($E_T$, molar transition energy) of various water-solvent system were obtained from the experimental results and are presented. The $a_N$ values were plotted as a function of mole fraction of the solvent. In case of water-DMSO, water-ethanol and water-1-propanol system, slight negative deviations from the straight line were observed. In water-acetone system, the absorption wavelength (${\lambda}$) due to ${\eta}{\rightarrow}{\pi}^{\ast}$ transition increased linearly with the increase of mole fraction of acetone. The relationship between $a_N$ of DTBN and ${\lambda}$ due to ${\eta}{\rightarrow}{\pi}^{\ast}$ transition in water-acetone and water-DMSO system was examined. It was found that the electronic structure of the nitroxide radicals is stablized from the fact that the N hyperfine coupling constants of DTBN radicals are greatly unaffected in the environment of water-solvent system.

• Korean Journal of Materials Research
• /
• v.23 no.3
• /
• pp.155-160
• /
• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.