• Title/Summary/Keyword: Absorption wavelength

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Photocurrent Characteristics of ZnO Nanoparticles (ZnO 나노입자의 광전류 특성)

  • Jun, Jin-Hyung;Seong, Ho-Jun;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.207-207
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    • 2008
  • ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

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Comparison of characteristics of IZO-Ag-IZO and IZO-Au-IZO multilayer electrodes for organic photovoltaics

  • Jeong, Jin-A;Choi, Kwang-Hyuk;Park, Yong-Seok;Park, Ho-Kyun;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.131-131
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    • 2010
  • We compared the electrical, optical, structural, and interface properties of indium zinc oxide (IZO)-Ag-IZO and IZO-Au-IZO multilayer electrodes deposited by linear facing target sputtering system at room temperature for organic photovoltaics. The IZO-Ag-IZO and IZO-Au-IZO multilayer electrodes show a significant reduction in their sheet resistance (4.15 and 5.49 Ohm/square) and resistivity ($3.9{\times}10^{-5}$ and $5.5{\times}10^{-5}$Ohm-cm) with increasing thickness of the Ag and Au layers, respectively. In spite of its similar electrical properties, the optical transmittance of the IZO-Ag-IZO electrode is much higher than that of the IZO-Au-IZO electrode, due to the more effective antireflection effect of Ag than Au in the visible region. In addition, the Auger electron spectroscopy depth profile results for the IZO/Ag/IZO and IZO/Au/IZO multilayer electrodes showed no interfacial reaction between the IZO layer and Ag or Au layer, due to the low preparation temperature. To investigate in detail the Ag and Au structures on the bottom IZO electrode with increasing thickness, a synchrotron x-ray scattering examination was employed. Moreover, the OSC fabricated on the IZO-Ag-IZO electrode shows a higher power conversion efficiency (3.05%) than the OSC prepared on the IZO-Au-IZO electrode (2.66%), due to its high optical transmittance in the wavelength range of 400-600 nm, which is the absorption wavelength of the P3HT:PCBM active layer.

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Effects of Aluminum Chloride Concentrations on Structural and Optical Properties of Al-doped ZnO Thin Films Prepared by the Sol-Gel Method (졸겔법으로 제작된 Al-doped ZnO 박막의 Aluminum Chloride 농도에 따른 구조적 및 광학적 특성)

  • Cho, Guan Sik;Kim, Min Su;Yim, Kwang Gug;Lee, Jaeyong;Leem, Jae-Young
    • Korean Journal of Metals and Materials
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    • v.50 no.11
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    • pp.847-854
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    • 2012
  • Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.

Enhancement of Photoluminescence by Ag Localized Surface Plasmon Resonance for Ultraviolet Detection

  • Lyu, Yanlei;Ruan, Jun;Zhao, Mingwei;Hong, Ruijin;Lin, Hui;Zhang, Dawei;Tao, Chunxian
    • Current Optics and Photonics
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    • v.5 no.1
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    • pp.1-7
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    • 2021
  • For higher sensitivity in ultraviolet (UV) and even vacuum ultraviolet (VUV) detection of silicon-based sensors, a sandwich-structured film sensor based on Ag Localized Surface Plasmon Resonance (LSPR) was designed and fabricated. This film sensor was composed of a Ag nanoparticles (NPs) layer, SiO2 buffer and fluorescence layer by physical vapour deposition and thermal annealing. By tuning the annealing temperature and adding the SiO2 layer, the resonance absorption wavelength of Ag NPs matched with the emission wavelength of the fluorescence layer. Due to the strong plasmon resonance coupling and electromagnetic field formed on the surface of Ag NPs, the radiative recombination rate of the luminescent materials and the number of fluorescent molecules in the excited state increased. Therefore, the fluorescent emission intensity of the sandwich-structured film sensor was 1.10-1.58 times at 120-200 nm and 2.17-2.93 times at 240-360 nm that of the single-layer film sensor. A feasible method is provided for improving the detection performance of UV and VUV detectors.

Design and Fabrication of SiO2/TiO2 Multi Layer Thin Films on Silicon Encapsulation of LED Deposited by E-beam Evaporation for NIR Narrow Band Pass Filter Application (NIR 협대역 투과 필터 응용을 위한 LED 실리콘 봉지재 위에 직접 E-beam으로 증착 된 SiO2/TiO2 다층 박막 설계 및 제작)

  • Kim, Dong Pyo;Kim, Kyung-Seob;Kim, Goo-Cheol;Jeong, Jung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.2
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    • pp.165-171
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    • 2022
  • The SiO2/TiO2 multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO2/TiO2 with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λp) of 660 nm and NIR LEDs with λp of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO2/TiO2 band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

Variations in the Physical Properties of RF-Sputtered CdS Thin Films Observed at Substrate Temperatures Ranging from 25 ℃ to 500 ℃

  • Sangwoon Lee;Juna Kim;Seokhee Lee;Hyun-Jin Cha;Chang-Sik Son;Young-Guk Son;Donghyun Hwang
    • Nanomaterials
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    • v.12 no.10
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    • pp.1618-1626
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    • 2022
  • CdS films with a wide range of substrate temperatures as deposition parameters were fabricated on Corning Eagle 2000 glass substrates using RF magnetron sputtering. The crystallographic structure, microscopic surface texture, and stoichiometric and optical properties of each CdS film deposited at various substrate temperatures were observed to be highly temperature-dependent. The grown CdS thin films revealed a polycrystalline structure in which a cubic phase was mixed based on a hexagonal wurtzite phase. The relative intensity of the H(002)/C(111) peak, which represents the direction of the preferential growth plane, enhanced as the temperatures climbed from 25 ℃ to 350 ℃. On the contrary, the intensity of the main growth peak at the higher temperatures of 450 ℃ and 500 ℃ was significantly reduced and exhibited amorphous-like behavior. The sharp absorption edge revealed in the transmission spectrum shifted from the long wavelength to the short wavelength region with the rise in the substrate temperature. The bandgap showed a tendency to widen from 2.38 eV to 2.97 eV when the temperatures increased from 25 ℃ to 350 ℃. The CdS films grown at the temperatures of 450 ℃ and 500 ℃ exhibited glass-like transmittance with almost no interference fringes of light, which resulted in wide bandgap values of 3.09 eV and 4.19 eV, respectively.

Visible Light Driven ZnFe2Ta2O9 Catalyzed Decomposition of H2S for Solar Hydrogen Production

  • Subramanian, Esakkiappan;Baeg, Jin-Ook;Kale, Bharat B.;Lee, Sang-Mi;Moon, Sang-Jin;Kong, Ki-Jeong
    • Bulletin of the Korean Chemical Society
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    • v.28 no.11
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    • pp.2089-2092
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    • 2007
  • Tantalum-containing metal oxides, well known for their efficiency in water splitting and H2 production, have never been used in visible light driven photodecomposition of H2S and H2 production. The present work is an attempt in this direction and investigates their efficiency. A mixed metal oxide, ZnFe2Ta2O9, with the inclusion of Fe2O3 to impart color, was prepared by the conventional ceramic route in single- and double-calcinations (represented as ZnFe2Ta2O9-SC and ZnFe2Ta2O9-DC respectively). The XRD characterization shows that both have identical patterns and reveals tetragonal structure to a major extent and a minor contribution of orthorhombic crystalline system. The UV-visible diffuse reflection spectra demonstrate the intense, coherent and wide absorption of visible light by both the catalysts, with absorption edge at 650 nm, giving rise to a band gap of 1.9 eV. Between the two catalysts, however, ZnFe2Ta2O9-DC has greater absorption in almost the entire wavelength region, which accounts for its strong brown coloration than ZnFe2Ta2O9-SC when viewed by the naked eye. In photocatalysis, both catalysts decompose H2S under visible light irradiation (λ ≥ 420 nm) and produce solar H2 at a much higher rate than previously reported catalysts. Nevertheless, ZnFe2Ta2O9-DC distinguishes itself from ZnFe2Ta2O9-SC by exhibiting a higher efficiency because of its greater light absorption. Altogether, the tantalum-containing mixed metal oxide proves its efficient catalytic role in H2S decomposition and H2 production process also.

Fabrication of Large Area Transmission Electro-Absorption Modulator with High Uniformity Backside Etching

  • Lee, Soo Kyung;Na, Byung Hoon;Choi, Hee Ju;Ju, Gun Wu;Jeon, Jin Myeong;Cho, Yong Chul;Park, Yong Hwa;Park, Chang Young;Lee, Yong Tak
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.220-220
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    • 2013
  • Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

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Photocatalytic Properties of TiO2 Thin Films Prepared by RF Sputtering (RF Sputtering법으로 제조된 TiO2 박막의 광촉매 특성)

  • Jeong, Min-ho;Jin, Duk-yong;Hayashi, Y.;Choi, Dae-kue
    • Korean Journal of Materials Research
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    • v.13 no.3
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    • pp.185-190
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    • 2003
  • Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

Analysis of Oxy- and Metmyoglobin in Beef Chuck by Absorption Spectrophotometer and Hunter-Lab (Hunter-Lab와 분광광도계(分光光度計)에 의한 쇠고기의 Oxy-와 Metmyoglobin의 분석(分析))

  • Yeo, Young Keun;Park, Choon Ran
    • Current Research on Agriculture and Life Sciences
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    • v.1
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    • pp.165-167
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    • 1983
  • Oxy - and metmyoglobin concentrations in beef chuck were measured by Hunter-Lab and spectrophotometer. The values of oxymyoglobin by Hunter-Lab got 34.03, 10.40, and 6.50 as average in L, a, and b while the CIE color primaries were 13.33, 11.58, and 9.94 in X, Y, and Z, respectively. The metmyoglobin values recorded 39.10, 13.20, and 10.13 in L, a, and b, of which values were converted to 17.88, 15.29, and 11.40 in X, Y, and Z of the CIE primaries. Absorption spectrum of oxymyoglobin showed 2 peaks which were 0.79 and 0.83 pf extinction coefficient with 530 and 570nm in wavelengh, and that of metmyoglobin appeared on an irregular curve with a summit of 0.58 and 500 in extinction coeffcient ($cm^2$/mg) and wavelength(nm) each.

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